TRANSISTOR SG 14 Search Results

transistor SG 14

Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the

sg transistor

Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage

Contextual Info: SGS-THOMSON iMm@ignnCTisì«ii Sgì BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS

Contextual Info: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

BUK455-500B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: S G S - T H O M S O N iMm@ignnCTisì«ii Sgì BU407 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS . HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The BU407 is a silicon epitaxial planar NPN transistors in Jedec T0-220 plastic package.

Contextual Info: Product Description SGA-2186 Stanford M icrodevices’ SG A-2186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-3486 Stanford M icrodevices’ SG A-3486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-6386 Stanford M icrodevices’ SG A-6386 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to

Contextual Info: Product Description SGA-5486 Stanford M icrodevices’ SG A-5486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

DC-2400 MHz 3.5V SiGe Amplifier

Abstract: A5286
Contextual Info: Product Description SGA-5286 Stanford M icrodevices’ SG A-5286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: r r 7 SGS-THOMSON Ä 7 # iMm@ignnCTisi«ii Sg¡ BU406D BU407D SILICON NPN SWITCHING TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR . VERY HIGH SWITCHING SPEED APPLICATIONS: . HORIZONTAL DEFLECTION FOR MONOCHROME TV DESCRIPTION The BU406D and BU407D are silicon planar

BU810

Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Contextual Info: Product Description SGA-2286 Stanford M icrodevices’ SG A-2286 is a high performance cascadeable 50-ohm am plifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon G erm a­ nium Heterostructure Bipolar Transistor SiGe HBT

SC06960

Abstract: 1Gt transistor SOA06 SOA56 748 transistor on marking RZ7 SOT23
Contextual Info: r Z 7 SG S-TH O M SO N ^ 7 # is LIOTIMMlig! SOAO6 SMALL SIGNAL NPN TRANSISTOR Type Marking SOAO6 1GT . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION . PNP COMPLEMENTS IS SOA56

Contextual Info: SG S-TH O M SO N RfflD0lsi i[Liera®[i!lDS$ BUF460AV NPN TRANSISTOR POWER MODULE . . . . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT

SGS100MA010D1

Abstract: S100M schematic diagram reverse forward motor
Contextual Info: SGS-THOMSON SG S100M A010D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS ^D S on SGS100MA010D1 100 V 0.014 a • • • • • Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL INDUSTRIAL APPLICATIONS:

SG3183N

Abstract: SG3183 SG3183J
Contextual Info: SILICON SG3m HIGH-CURRENT NPN TRANSISTOR ARRAYS LINEAR IN TEG R ATED C IR C U ITS DESCRIPTION FEATURES The SG 3183 series of arrays consists of five, closely-matched, high-current NPN transistors. Although sharing a common monolithic substrate, the transistors are connected such that all

SG3183

Abstract: SG3183N SG3183D 6 "transistor arrays" ic SG3183J sg3183/883
Contextual Info: SG3183 SILICON GENERÄL HIGH-CURRENT NPN TRANSISTOR ARRAYS LINEAR INTEG RATED CIRCUITS D ESC RIPTIO N FEA TU R ES The SG 3183 series of arrays consists of five, closely-matched, high-current NPN transistors. Although sharing a common monolithic substrate, the transistors are connected such that all

STV4NA60

Contextual Info: / I T SG S-TH O M SO N ^ 7 # MDeiiOIlLilgraSiMeS STV4NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STV4NA60 . . . . . . . V dss 600 V Id RDS on < 2.2 a 4.3 A TYPICAL RDS(on) = 1.85 0 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

BUT23

Contextual Info: { Z I SG STUO M SO N S^5 i IL [ieîi® iD © i BUT232V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE