TRANSISTOR SEM 2006 Search Results

2SC3465

Abstract: TRANSISTOR Outlines DDD4443 OCQ4444
Contextual Info: sanyo Sem icon ducto r 12E D I corp TTTPDTfc. 000444c! U | T -s¿-/ár 2SC3465 NPN Triple Diffused Planar Silicon Transistor 2017 Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed t^>: 0.1us typ.

L1606

Abstract: a 1201 sanyo 2SD1837
Contextual Info: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 2SD1837 T-33-2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features

1s126a

Abstract: 2SD1837 1S126
Contextual Info: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 T-33- 2SD1837 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features

2SC2210

Abstract: 374F
Contextual Info: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.

Contextual Info: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.

2052A

Abstract: SILICON TRANSISTOR FS 2025
Contextual Info: SANYO SEM ICONDUCTO R IS E CORP D 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C

Contextual Info: D • SbMEEm MA42140 Series Description □ □ □ 1 4 4 fl m/a-com T H MIC \ Silicon Low Noise Bipolar Transistor t 31-17 sem icondtBrlngton - Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Ip Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63

2005A

Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Contextual Info: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features

SS9014

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage

transistor SS9015

Contextual Info: SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Level-3-245C-168

Abstract: UA7805C voltage regulator UA7824 UA7805C equivalent uA78xx uA7812 application note uA7815C equivalent uA7810C uA7812C equivalent
Contextual Info: µA7800 SERIES POSITIVE-VOLTAGE REGULATORS www.ti.com SLVS056L – MAY 1976 – REVISED NOVEMBER 2006 FEATURES • • • 3-Terminal Regulators Output Current up to 1.5 A Internal Thermal-Overload Protection • • • High Power-Dissipation Capability Internal Short-Circuit Current Limiting

ATI Research

Abstract: MIL-STD-750b
Contextual Info: Reliability of semiconducto in a sta b ilized condition. T he ab ility of p ro d u c­ tion p ro cesses is confirm ed and p rio rity item s a re estab lish ed to rea lize ideal pro cess control, th u s p av in g th e w ay fo r su b se q u en t m ass p ro ­

MA2Q738

Abstract: MA738
Contextual Info: Regulations No.: IC3F5090 Total Pages Page 15 1 Part No. AN8016NSH-A Package Code No. SSOP010-P-0225A Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by k. oU'i Applied by Checked by Prepared by M.Hiramatsu M.Yamanaka M.Motomori

to-220 fully mold

Abstract: TEXAS INSTRUMENTS uA7900
Contextual Info: µA7900 SERIES NEGATIVE-VOLTAGE REGULATORS www.ti.com SLVS058H – JUNE 1976 – REVISED NOVEMBER 2006 FEATURES 3-Terminal Regulators Output Current up to 1.5 A No External Components Internal Thermal-Overload Protection INPUT INPUT High Power-Dissipation Capability

ATA6026

Abstract: ATA6026-PHQW JESD78 QFN32
Contextual Info: Features • PWM and Direction-controlled Driving of Four Externally Powered NMOS Transistors • Internal Charge Pump Provides Gate Voltages for High-side Drivers in Permanent ON Mode and Supplies the Gate of the External Battery Reverse Protection NMOS • 5V Regulator With External Power Device NPN and Current Limitation Function

MIL-STD-750E

Abstract: 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES

AN8015SH

Contextual Info: Code No.: IC3F4738 Total Pages Page 17 1 Part No. AN8015SH Package Code No. SSOP010-P-0225A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by ^ K.Komichi Checked by •ty 4 c tfm ìÙ Ìi M.Hiramatsu

Contextual Info: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol

MA2Q738

Abstract: MA738
Contextual Info: Code No.: IC3F4642 Total Pages Page 15 1 Part No. AN8016SH Package Code No. SSOP010-P-0225A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by Checked by Prepared by M.Hiramatsu J.Hara R.Nakai

A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX

Abstract: CGH27030 op4400 200w power amplifier PCB layout GaN amplifier 100W 200w mono OP44 100w car amplifier GaN Bias 25 watt ultrarf
Contextual Info: From December 2008 High Frequency Electronics Copyright 2008 Summit Technical Media, LLC High Frequency Design DOHERTY AMPLIFIER A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX By Simon Wood and Ray Pengelly, Cree, Inc., and Jim Crescenzi, Central Coast Microwave Design, LLC

transistor jt

Abstract: M558-01 M-558
Contextual Info: MOTOROLA 6367254 SC MOTOROLA ÍX ST R S /R SC F> Tb D Ë J bBbVSSM 0005412 D 96D 8 2 4 1 2 <X S T R S / R F - M A X I M U M R A T IN G S Sym bol Value Unit V C EO 60 Vdc Coltector-Base Voltage VC B 60 Vdc Emitter-Base Voltage V e b 5.0 Vdc ic 600 mAdc Rating

2ss9014

Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Contextual Info: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013

Contextual Info: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has

Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320