TRANSISTOR SC3 Search Results

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

sf 128 transistor

Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.

Contextual Info: SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER M INI MOLD D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2 SA 1 4 6 3 is designed for power amplifier and high speed switching applications. In mMlimttert FEATURES

Contextual Info: KSA1244 PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING • Low Collector Emitter Saturation Voltage • Complement to K SC3074 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Sym bol - 60 V Collector Emitter Voltage

Contextual Info: KSA1241 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K SC3076 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Sym bol -5 5 V Collector Emitter Voltage

Contextual Info: SANKEN ELECTRIC CO LTD SSE D • 7^07*41 000CH71 13T » S A K J Silicon NPN Triple Diffused Planar ^ ☆Switching Transistor SC3890 Application Example : S S - fs e Outline Drawing 4 . . FM20 Switching Regulator and General Purpose Electrical Characteristics

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT4126 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SMBT4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings

Contextual Info: PNP Silicon Switching Transistor SMBT 4126 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 4126 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings

2SA1255

Abstract: 2SC3138 C3138
Contextual Info: T O S H IB A 2SC3138 TO SH IBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 SC313 8 HIGH VOLTAGE SW ITCHING APPLICATIONS U n it in mm h 0 .5 -0 .3 TTicrh VnlfflCTi» • = 9 .0 fW' tv-IV-'T! n 1' e • -

BUK202-50Y

Abstract: buk20250y
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured

D1835 transistor

Abstract: TRANSISTOR D1835 2SD1835
Contextual Info: 2SD1835 Ordering number : EN2158B SANYO Semiconductors DATA SHEET 2SD1835 NPN Epitaxial Planar Silicon Transistor Driver Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes

C3332

Abstract: 2SC3332S 2sc3332
Contextual Info: 2SC3332 Ordering number : EN1334E SANYO Semiconductors DATA SHEET 2SC3332 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown

Contextual Info: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications

2sj511

Contextual Info: TOSHIBA 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX. -*J-*

Contextual Info: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications

D1835 transistor

Abstract: TRANSISTOR D1835
Contextual Info: Ordering number : EN2158B 2SD1835 Bipolar Transistor 50V, 2A, Low VCE sat , NPN Single NP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage

J956

Abstract: 2SA1541 T0126 T0-126ML 2sc3956
Contextual Info: I Ordering number: EN 2440A | 2SA1541/2SC3956 SA\YO PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications I Applications . H igh-definition CRT display video output, wide-band amp Features . High gain-bandwidth product f^=300MHz

Contextual Info: PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 TO-220AB

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

BC337 pnp transistor

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage

sa-800

Abstract: 2SC3151
Contextual Info: Ordering num ber:EN 1070C F SAW O i 2 SC3151 NO.1070C NPN Triple Diffused Planar Silicon Transistor F or S w i t c h i n g Re g u l a t o r Features . High breakdown voltage . High switching speed . Wide ASO Vq j o -^OOV A b s o l u t e Maximum R at in g s a t Ta=250c