TRANSISTOR SC 308 Search Results

2SC4617

Abstract: SMD310
Contextual Info: ON Semiconductort 2SC4617 Product Preview NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package

transistor sc 308

Abstract: 2SA1774 SMD310
Contextual Info: ON Semiconductort 2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where

transistor sc 308

Abstract: MSD1819A-RT1 SMD310
Contextual Info: MSD1819A-RT1 Preferred Device General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface

transistor sc 308

Abstract: MSB92AWT1 MSB92WT1 SMD310
Contextual Info: MSB92WT1, MSB92AWT1 Preferred Device Product Preview PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

transistor sc 308

Abstract: MSB1218A MSB1218A-RT1 SMD310
Contextual Info: ON Semiconductort MSB1218A-RT1 PNP Silicon General Purpose Amplifier Transistor ON Semiconductor Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package which is designed for low power surface

vp 3082

Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
Contextual Info: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,

BC556

Abstract: BC557 BC558 BC857 BC857B BC857BTT1 BC857C BC857CTT1
Contextual Info: BC857BTT1, BC857CTT1 Preferred Devices Advance Information General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 which is designed for low power surface mount applications.

1N914

Abstract: MMBT2222ATT1 SMD310
Contextual Info: MMBT2222ATT1 Preferred Device Advance Information General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications.

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com

BC556

Abstract: BC557 BC558 BC857 BC857B BC857BTT1 BC857C BC857CTT1
Contextual Info: BC857BTT1, BC857CTT1 Preferred Devices Advance Information General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 which is designed for low power surface mount applications.

transistor sc 308

Abstract: MMBT2907AWT1
Contextual Info: ON Semiconductort Product Preview General Purpose Transistor MMBT2907AWT1 ON Semiconductor Preferred Device PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.

MSB710

Abstract: MSB710-RT1 SMD310
Contextual Info: ON Semiconductort PNP General Purpose Amplifier Transistor Surface Mount COLLECTOR 3 MSB710-RT1 ON Semiconductor Preferred Device 3 2 2 BASE 1 1 EMITTER CASE 318D–04, STYLE 1 SC–59 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage

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Contextual Info: PMF87EN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PMF63UN

Contextual Info: SO T3 23 PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

CA3081

Abstract: vp 3082 transistor Common collector configuration 40736R CA3081F CA3081M CA3082 CA3082M CA3082M96 DR2000
Contextual Info: CA3081, CA3082 UCT PROD E PRODUCT E T E L T O B SO STITU er at E SUB upport Cen t sc L IB S /t POS al S il.com FOR A ou r Technic wData .intersSheet w t w c a IL or c ont NTERS 1-888-I General Purpose High Current NPN Transistor Arrays 480.6 • CA3081 - Common Emitter Array

transistor sc 308

Abstract: 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
Contextual Info: PROFET BTS 308 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump)

transistor sc 308

Abstract: E3062A 410E2 BTS308 BTS410H2 E3043 E3062
Contextual Info: PROFET BTS 308 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump)

siemens profet overview

Abstract: transistor SMD t34 transistor sc 308 235L 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
Contextual Info: SIEM EN S aaasbos ms 2 PROFET BTS 308 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization ol inductive loads

fet sm 367

Contextual Info: SIEMENS PROFET BTS 308 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection ^bb AZ Operating voltage On-state resistance V4)b(on) Ron Load current (ISO) /L(ISO) • • • • • Overload protection

A57520

Abstract: Transistor 3A
Contextual Info: \ U SED O N ANGLÈ í tTHIRD ¡f S EC U R IT Y C lA S S 'N PROJECTION ' / REMOVE A l l ftURRS. SH A R P E D G E S O K H A S H X III9 Q DKG lO »E R EA D IN C O N JU N C T IO N W ITH B .S 308 D R A W IN G N U M K R g H Y .« O F 6 S U T : 3A/A57520 S IM IL A R TO JTEDE C T O -5 C A S E .

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

gk 67

Contextual Info: a a a s b o s SIEMENS □ □ eì 2 b S D m s 2 PROFET BTS 308 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Overload protection

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

transistor sc 308

Abstract: DTA144TT1 SMD310
Contextual Info: DTA144TT1 Preferred Device Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor