DIODE S2E
Abstract: s2e transistor S2E MARKING TPC6005 s2e diode
Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) · High forward transfer admittance: |Yfs| = 10 S (typ.)
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TPC6005
DIODE S2E
s2e transistor
S2E MARKING
TPC6005
s2e diode
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TPC6005
Abstract: No abstract text available
Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)
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TPC6005
TPC6005
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TPC6005
Abstract: No abstract text available
Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)
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TPC6005
TPC6005
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s2e transistor
Abstract: DIODE S2E
Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)
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TPC6005
s2e transistor
DIODE S2E
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TPC6005
Abstract: No abstract text available
Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)
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TPC6005
TPC6005
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TPC6005
Abstract: No abstract text available
Text: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)
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TPC6005
TPC6005
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TRANSISTOR FF75
Abstract: 1BW TRANSISTOR
Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module
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34D32CI7
TRANSISTOR FF75
1BW TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module
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Untitled
Abstract: No abstract text available
Text: 7 -3 7 - 3 / FF 150 R 06 KL EUPEC S2E Transistor T> 34D32T7 Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften 0GG0224 Bectrical properties RthCK Ö2S « U P E C Thermal properties 0,09 0,18 0,03 0,06 DC, pro Baustein / per module DC, pro Zweig / per arm
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34D32T7
0GG0224
34D32CI7
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transistor 1BW 57
Abstract: IGBT EUPEC
Text: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften
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GGG0232
transistor 1BW 57
IGBT EUPEC
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J975
Abstract: 1BW TRANSISTOR 733transistor
Text: EUPEC S2E • 34032^7 000020b flOT » U P E C FF 75 R 10 K 7 =3 « / Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 75 A lc Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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000020b
sat00
J975
1BW TRANSISTOR
733transistor
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TRANSISTOR KT 838
Abstract: FF200 UTG 16 diode sg 5 ts
Text: FF 200 R 06 KF EUPEC S2E ]> Rthjc Elektrische Eigenschaften Electrical properties V ces Maximum rated values 600 V 200 A RthCK lc G G 00232 Thermische Eigenschaften Transistor Transistor 3 4 0 3 2 *1 7 T T l •UPEC Thermal properties 0,08 0,16 0,03 0,06 DC, pro Baustein / per module
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GGG0232
34D32CI7
TRANSISTOR KT 838
FF200
UTG 16
diode sg 5 ts
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Untitled
Abstract: No abstract text available
Text: N T E ELECTRONICS INC S2E D bMaiSS^ PPPSäö^ C13Ö H N T E □ITS - TTL 1M I E G J TRANSISTOR TRANSISTOR LOGIC T -W 3 -Ô | Low Rower, Dual, 4-BK Latch 24-Lead DIP, See Dlag 252 Low Power, 4—Bit Binary Counter 16-Lead DIP, See Dlag 249 Retriggerable Monostable Multivibrator
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24-Lead
16-Lead
14-Lead
T-90-01
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FF15R10K
Abstract: No abstract text available
Text: 7 *39-3/ F F 15R 10K SSE EUPEC D Ü D D lf iE Thermische Eigenschaften Transistor Transistor 34032^7 i RthJC Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1000 V 15 A RthCK lc 54b «U PEC Thermal properties DC, pro Baustein/per module
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FF15R10K
34D32CI7
FF15R10K
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1BW TRANSISTOR
Abstract: No abstract text available
Text: FF 50 R 10 K 3MÜ32ci7 üDDOllb 03D « U P E C 52E D EUPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module RthJC DC, pro Zweig / per arm pro Baustein /p e r module RthCK pro Zweig/per arm Transistor Transistor Elektrische Eigenschaften
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3MD32CÃ
34D32CI7
1BW TRANSISTOR
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1BW TRANSISTOR
Abstract: No abstract text available
Text: FF 25 R 06 KF SEE T> EUPEC Thermische Eigenschaften Transistor Transistor 34D32T7 OOQGlflb n i H U P E C Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 25 A RfhCK lc Thermal properties DC, pro Baustein/per module DC, pro Zweig /p e r arm
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34D32T7
34D32CI7
1BW TRANSISTOR
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D 1413 transistor
Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249
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16-Lead
14-LeadDIP
16-LeadDIP
256-Bit
64-Blt
NTE74190
NTE74LS190
D 1413 transistor
NTE74191
transistor K 1413
32 bit carry select adder code
transistor a 1413
NTE74LS191
NTE74LS190
5.1 diagram
NTE74
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LN800
Abstract: C2E1 F400 diode f400
Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties
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D0DD25fl
34D32CI7
LN800
C2E1
F400
diode f400
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2SC4452
Abstract: QVC5 Q60H
Text: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product
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G007101
2SC4452
-T-35-07
2SC4452-applied
QVC5
Q60H
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP E2E a0ükñ23 □ 7TT707la D T-3H1 2SC3771 # N PN Epitaxial Planar Silicon Transistor 2018A U/V OSC, M IX, High-Frequency General-Purpose Amp Applications 1944B Applications . UHF/VHF frequency converters, looal oscillators, HF amplifiers
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7TT707la
2SC3771
1944B
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sj 2038
Abstract: ic sj 2038 scr gate drivers ic ec sanyo 2SD1628 p10j T35 ET sanyo sdk marking sdk
Text: SANYO SEMI CONDUCTOR 2SD1628 CORP ESE D 7 ^ 7 0 7 ^ 00G7S4L, T - 3 5 4 -15 % 2038 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications •X1731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor
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ci707b
000724b
2SD1628
250mm2
sj 2038
ic sj 2038
scr gate drivers ic
ec sanyo
p10j
T35 ET
sanyo sdk
marking sdk
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Untitled
Abstract: No abstract text available
Text: . SANYO SEMICONDUCTOR CORP EEE D • 7^ 1707^ 2SD1628 0007241= 4 T - 3 5 -15 % 2038 N P N Epitaxial Planar Silicon Transistor High-Current Switching Applications 731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor
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2SD1628
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation
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i707b
2SC4401
2SC4401-applied
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transistor 2038
Abstract: 2SA1729 S60S6
Text: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage
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2SA1729
-T-37-/Ã
250mm2
transistor 2038
2SA1729
S60S6
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