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    TRANSISTOR S2D Search Results

    TRANSISTOR S2D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S2D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1244

    Abstract: NPN S2D Q62702-A1244 SCT-595
    Text: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 92M s2D Q62702-A1244 Package


    Original     		PDF VPW05980 Q62702-A1244 SCT-595 Mar-13-1998 EHP00881 EHP00882 A1244 NPN S2D Q62702-A1244 SCT-595

    Untitled

    Abstract: No abstract text available
    Text: SMBTA92/ MMBTA92 PNP Silicon High Voltage Transistor 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary type: SMBTA42 NPN 2 1 Type SMBTA92/ MMBTA92 Marking s2D 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings


    Original     		PDF SMBTA92/ MMBTA92 SMBTA42 VPS05161

    marking s2d

    Abstract: MMBTA92 SMBTA42 SMBTA92
    Text: SMBTA92/ MMBTA92 PNP Silicon High Voltage Transistor 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary type: SMBTA42 NPN 2 1 Type SMBTA92/ MMBTA92 Marking s2D 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings


    Original     		PDF SMBTA92/ MMBTA92 SMBTA42 VPS05161 Feb-18-2002 EHP00881 marking s2d MMBTA92 SMBTA42 SMBTA92

    NPN S2D

    Abstract: TRANSISTOR S2d SMBTA42 SMBTA92
    Text: SMBTA92 PNP Silicon High Voltage Transistor 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary type: SMBTA42 NPN 2 1 Type Marking SMBTA92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter


    Original     		PDF SMBTA92 SMBTA42 VPS05161 Jun-29-2001 EHP00881 EHP00882 EHP00883 NPN S2D TRANSISTOR S2d SMBTA42 SMBTA92

    Untitled

    Abstract: No abstract text available
    Text: SMBTA92/ MMBTA92 PNP Silicon High Voltage Transistor 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary type: SMBTA42 NPN 2 1 Type SMBTA92/ MMBTA92 Marking s2D 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings


    Original     		PDF SMBTA92/ MMBTA92 SMBTA42 VPS05161

    Untitled

    Abstract: No abstract text available
    Text: SMBTA92 PNP Silicon High Voltage Transistor 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary type: SMBTA42 NPN 2 1 Type Marking SMBTA92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter


    Original     		PDF SMBTA92 SMBTA42 VPS05161 Nov-30-2001 EHP00881 EHP00882 EHP00883

    TRANSISTOR S2d

    Abstract: FMMTA92 SXTA42 SXTA92 DSA003720
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 SXTA92 ✪ COMPLEMENTARY TYPE – SXTA42 PARTMARKING DETAIL – S2D C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage


    Original     		PDF SXTA92 SXTA42 -200V, -20mA, -10mA, -30mA, 20MHz FMMTA92 TRANSISTOR S2d SXTA42 SXTA92 DSA003720

    NPN S2D

    Abstract: No abstract text available
    Text: SMBTA 92 PNP Silicon High Voltage Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN 2 1 Type Marking SMBTA 92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 OT-23 Oct-14-1999 EHP00881 EHP00882 EHP00883 NPN S2D

    SCT595

    Abstract: SMBTA42M SMBTA92M
    Text: SMBTA92M PNP Silicon High-Voltage Transistor 4  High breakdown voltage  Low collector-emitter saturation voltage 5  Complementary type: SMBTA42M NPN 3 2 1 VPW05980 Type Marking SMBTA92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings


    Original     		PDF SMBTA92M SMBTA42M VPW05980 SCT595 Nov-30-2001 EHP00881 EHP00882 SCT595 SMBTA42M SMBTA92M

    Untitled

    Abstract: No abstract text available
    Text: SMBTA92M PNP Silicon High-Voltage Transistor 4  High breakdown voltage  Low collector-emitter saturation voltage 5  Complementary type: SMBTA42M NPN 3 2 1 VPW05980 Type Marking SMBTA92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings


    Original     		PDF SMBTA92M SMBTA42M VPW05980 SCT595 Jun-29-2001 EHP00881 EHP00882

    NPN S2D

    Abstract: SCT-595 SCT59
    Text: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking SMBTA 92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595


    Original     		PDF VPW05980 SCT-595 Oct-14-1999 EHP00881 EHP00882 NPN S2D SCT-595 SCT59

    TPC6003

    Abstract: No abstract text available
    Text: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)


    Original     		PDF TPC6003 TPC6003

    Untitled

    Abstract: No abstract text available
    Text: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)


    Original     		PDF TPC6003

    TPC6003

    Abstract: No abstract text available
    Text: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)


    Original     		PDF TPC6003 TPC6003

    TRANSISTOR S2d

    Abstract: TPC6003
    Text: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: |Yfs| = 7 S (typ.)


    Original     		PDF TPC6003 TRANSISTOR S2d TPC6003

    TPC6003

    Abstract: marking CODE 001
    Text: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)


    Original     		PDF TPC6003 TPC6003 marking CODE 001

    KS524575

    Abstract: No abstract text available
    Text: mNBŒK KS524575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 75 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS524575 Amperes/600 G00fl002 KS524575

    TRANSISTOR S2d

    Abstract: lc-30mA L02M
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 SXTA92 O COM PLEM ENTARY TYPE - SXTA42 PARTMARKING DETAIL - S2D SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL Emitter-Base Voltage VALUE


    OCR Scan     		PDF SXTA92 SXTA42 -200V, -20mA. -20mA, lc--10mA, -30mA, -10mA, 20MHz 300us. TRANSISTOR S2d lc-30mA L02M

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN II LD CO Q62702-A1244 II s2D o SMBTA 92M Pin Configuration CM Ordering Code II Marking 0Û


    OCR Scan     		PDF Q62702-A1244 SCT-595

    TRANSISTOR S2d

    Abstract: NPN S2D
    Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking


    OCR Scan     		PDF Q62702-A1244 SCT-595 300ns; TRANSISTOR S2d NPN S2D

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23


    OCR Scan     		PDF Q68000-A6479 OT-23 Jan-22-1999 100MHz EHP00879

    TRANSISTOR S2d

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23


    OCR Scan     		PDF Q68000-A6479 OT-23 Jan-22-1999 100MHz TRANSISTOR S2d

    TRANSISTOR S2d

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSU E 3 - JAN UARY 1996 O_ COMPLEMENTARY TYPE - SXTA42 PARTMARKING D E T A IL- S2D ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT VCBO -300 V Collector-Emitter Voltage V CEO -300 V Emitter-Base Voltage


    OCR Scan     		PDF SXTA42 -200V, -20mA, -30mA, -10mA, 20MHz 300as. TS70S7fl D0CHI474 TRANSISTOR S2d

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA jm m TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U— MOS III TPC6003 NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT in nun •Low Drain - Source ON Resistance : R D S (0N)=19niQ(Typ.) •High Forward Transfer Admittance : |Y f s |= 7S (Typ.)


    OCR Scan     		PDF TPC6003 19niQ