TRANSISTOR S2D Search Results

KS524575

Contextual Info: mNBŒK KS524575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 75 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

TRANSISTOR S2d

Abstract: lc-30mA L02M
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 SXTA92 O COM PLEM ENTARY TYPE - SXTA42 PARTMARKING DETAIL - S2D SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL Emitter-Base Voltage VALUE

A1244

Abstract: NPN S2D Q62702-A1244 SCT-595
Contextual Info: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 92M s2D Q62702-A1244 Package

Contextual Info: SMBTA92/ MMBTA92 PNP Silicon High Voltage Transistor 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA42 NPN 2 1 Type SMBTA92/ MMBTA92 Marking s2D 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings

Contextual Info: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN II LD CO Q62702-A1244 II s2D o SMBTA 92M Pin Configuration CM Ordering Code II Marking 0Û

marking s2d

Abstract: MMBTA92 SMBTA42 SMBTA92
Contextual Info: SMBTA92/ MMBTA92 PNP Silicon High Voltage Transistor 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA42 NPN 2 1 Type SMBTA92/ MMBTA92 Marking s2D 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings

NPN S2D

Abstract: TRANSISTOR S2d SMBTA42 SMBTA92
Contextual Info: SMBTA92 PNP Silicon High Voltage Transistor 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA42 NPN 2 1 Type Marking SMBTA92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter

Contextual Info: SMBTA92/ MMBTA92 PNP Silicon High Voltage Transistor 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA42 NPN 2 1 Type SMBTA92/ MMBTA92 Marking s2D 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings

Contextual Info: SMBTA92 PNP Silicon High Voltage Transistor 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA42 NPN 2 1 Type Marking SMBTA92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter

TRANSISTOR S2d

Abstract: NPN S2D
Contextual Info: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking

TRANSISTOR S2d

Abstract: FMMTA92 SXTA42 SXTA92 DSA003720
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 SXTA92 ✪ COMPLEMENTARY TYPE – SXTA42 PARTMARKING DETAIL – S2D C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

TRANSISTOR S2d

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

NPN S2D

Contextual Info: SMBTA 92 PNP Silicon High Voltage Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN 2 1 Type Marking SMBTA 92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings

SCT595

Abstract: SMBTA42M SMBTA92M
Contextual Info: SMBTA92M PNP Silicon High-Voltage Transistor 4
High breakdown voltage
Low collector-emitter saturation voltage 5
Complementary type: SMBTA42M NPN 3 2 1 VPW05980 Type Marking SMBTA92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings

Contextual Info: SMBTA92M PNP Silicon High-Voltage Transistor 4
High breakdown voltage
Low collector-emitter saturation voltage 5
Complementary type: SMBTA42M NPN 3 2 1 VPW05980 Type Marking SMBTA92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings

NPN S2D

Abstract: SCT-595 SCT59
Contextual Info: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking SMBTA 92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595

TPC6003

Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

TPC6003

Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

TPC6003

Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

TRANSISTOR S2d

Abstract: TPC6003
Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: |Yfs| = 7 S (typ.)

TPC6003

Abstract: marking CODE 001
Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

Contextual Info: TOSHIBA jm m TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U— MOS III TPC6003 NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT in nun •Low Drain - Source ON Resistance : R D S (0N)=19niQ(Typ.) •High Forward Transfer Admittance : |Y f s |= 7S (Typ.)