TRANSISTOR S2A Search Results
TRANSISTOR S2A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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| TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR S2A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TRANSISTOR S2A
Abstract: FJX3906
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FJX3906 OT-323 TRANSISTOR S2A FJX3906 | |
FJX3906Contextual Info: FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage |
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FJX3906 OT-323 FJX3906 | |
TRANSISTOR S2A
Abstract: transistor marking S2A s2a transistor
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FJX3906 OT-323 TRANSISTOR S2A transistor marking S2A s2a transistor | |
FJX3906Contextual Info: FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage |
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FJX3906 OT-323 FJX3906 | |
TRANSISTOR S2AContextual Info: FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage |
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FJX3906 OT-323 FJX3906TF TRANSISTOR S2A | |
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Contextual Info: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The |
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FJX3906 SC-70 FJX3906TF | |
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Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E |
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SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 | |
marking code s2a SOT23
Abstract: smbt3906 MMBT3906 infineon
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SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon | |
MMBT3906
Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
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SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 EHP00771 EHP00768 Jul-28-2003 MMBT3906 SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904 | |
power 22E
Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
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SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A | |
power 22E
Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
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SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904 | |
3906
Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
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100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E | |
TRANSISTOR S2A
Abstract: power 22E FBPT-923
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CH3906N1PT FBPT-923 FBPT-923) 200mA) TRANSISTOR S2A power 22E FBPT-923 | |
CH3906GP
Abstract: SOT-23 marking S2A
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CH3906GP OT-23 OT-23) 200mA) CH3906GP SOT-23 marking S2A | |
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Contextual Info: polyfet rf devices SQ201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 8 Watts Push - Pull |
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SQ201 | |
SC201Contextual Info: polyfet rf devices SC201 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances, |
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SC201 SC201 | |
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Contextual Info: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 25 Watts Push - Pull |
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SK204 | |
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Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended |
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S8201 | |
TRANSISTOR S2A
Abstract: SD201
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SD201 TRANSISTOR S2A SD201 | |
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Contextual Info: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 8 Watts Single Ended |
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S8202 | |
6c2 transistorContextual Info: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN) 2 |
OCR Scan |
100mA 3904S 3906S VPS05604 3906S Q62702-A1202 EHA07173 OT-363 EHP00767 EHP00770 6c2 transistor | |
MMBT3906_R2_00001Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA |
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MMBT3906 OT-23 -200mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, MMBT3906_R2_00001 | |
MMBT3906
Abstract: MMBT3906_R1_00001 MMBT3906R
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MMBT3906 -200mA 2002/95/EC IEC61249 OT-23 OT-23, MIL-STD-750, MMBT3906 MMBT3906_R1_00001 MMBT3906R | |
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Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA |
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MMBT3906 OT-23 -200mA 2002/95/EC IEC61249 OT-23, MIL-STD-750, | |