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    TRANSISTOR S1A 64 Search Results

    TRANSISTOR S1A 64 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S1A 64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SH702

    Abstract: No abstract text available
    Text: polyfet rf devices SH702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SH702 SH702

    SP702

    Abstract: VDMOS
    Text: polyfet rf devices SP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SP702 SP702 VDMOS

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SP702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SK702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SD702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SD702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SA702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SA702

    SP702

    Abstract: No abstract text available
    Text: polyfet rf devices SP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SP702 SP702

    SK702

    Abstract: No abstract text available
    Text: polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SK702 SK702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SD702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SD702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SP702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SK702

    SK702

    Abstract: VDMOS SH702
    Text: polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SK702 SK702 VDMOS SH702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SK702

    SA702

    Abstract: VDMOS
    Text: polyfet rf devices SA702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SA702 SA702 VDMOS

    TRANSISTOR S1A

    Abstract: TRANSISTOR S1A 64 SA702
    Text: polyfet rf devices SA702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SA702 TRANSISTOR S1A TRANSISTOR S1A 64 SA702

    SH702

    Abstract: VDMOS
    Text: polyfet rf devices SH702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SH702 SH702 VDMOS

    SD702

    Abstract: VDMOS TRANSISTOR S1A
    Text: polyfet rf devices SD702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SD702 SD702 VDMOS TRANSISTOR S1A

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SH702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SH702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SH702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SH702

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SA702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SA702

    scientific imaging technologies

    Abstract: scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424A SI-424 mpp schematic TRANSISTOR S1A 41
    Text: SCIENTIFIC IMAGING TECHNOLOGIES, INC. 2048 x 2048 pixel format 24µm square • Front-illuminated or thinned, back-illuminated versions ■ Unique thinning and Quantum Efficiency enhancement processes ■ Excellent QE from IR to UV ■ Anti-reflection coating


    Original     		PDF SI-424A 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08 1E-01 scientific imaging technologies scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424 mpp schematic TRANSISTOR S1A 41

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SH702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SH702

    TRANSISTOR S1A 64

    Abstract: 03N06C AN7254 RLD03N06CLE RLD03N06CLESM RLP03N06CLE
    Text: S E M I C O N D U C T O R RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • • Packages JEDEC TO-220AB 0.30A, 60V


    Original     		PDF RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE O-220AB 150oC O-251AA RLD03N06CLESM tr-30 TRANSISTOR S1A 64 03N06C AN7254 RLD03N06CLE RLP03N06CLE

    MOSFET 60V 210A

    Abstract: 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334
    Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs File Number 3948.5 Features • 0.30A, 60V These are intelligent monolithic power circuits which


    Original     		PDF RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334