TRANSISTOR S1A Search Results

Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL

FJX3904

Contextual Info: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage

transistor marking s1a

Abstract: S1a SOT marking S1A
Contextual Info: FJX3904 FJX3904 General Purpose Transistor 2 NPN Epitaxial Silicon Transistor 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted
Value Units VCBO Symbol Collector-Base Voltage Parameter 60 V VCES Collector-Emitter Voltage

transistor marking s1a

Contextual Info: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage

transistor marking s1a

Abstract: FJX3904
Contextual Info: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage

transistor marking s1a

Abstract: TRANSISTOR S1A FJX3904
Contextual Info: FJX3904 FJX3904 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage

transistor marking s1a

Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage

transistor marking s1a

Abstract: TRANSISTOR S1A FJX3904 FJX3904TF 130010 TRANSISTOR I22 marking
Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage

2262C

Abstract: 2262ca smps transformer pc
Contextual Info: /Z T SCS-THOMSON TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TW O LEVELS TRANSISTOR CURRENT LIMI­ TATION ■ DOUBLE PULSE SUPPRESSION

S1A MARKING CODE

Abstract: marking code S1A sot23 H12E
Contextual Info: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package

transistor marking s1a

Contextual Info: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package

1N916

Abstract: MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E
Contextual Info: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package

power 22E

Abstract: SMBT3906 1N916 SMBT3904
Contextual Info: SMBT3904 NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 PNP 2 1 Type Marking SMBT3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

3904

Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
Contextual Info: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

CH3904GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3904GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.

ch3904pt

Abstract: transistor marking s1a "marking s1a" sot-23 TRANSISTOR S1A 64 S1A sot-23 sot23 s1a marking sot23 transistor marking 12E ch3904 1N916 MA103
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3904PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.

SE701

Abstract: VDMOS
Contextual Info: polyfet rf devices SE701 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,

SJ701

Abstract: VDMOS
Contextual Info: polyfet rf devices SJ701 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,

Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

"marking s1a" sot-23

Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

Contextual Info: MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA

ic power 22E

Abstract: H12E h11e EHP00761 10K275 marking S1A
Contextual Info: SMBT3904S NPN Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT3906S (PNP)

03n06

Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener

Contextual Info: SMBT3904S NPN Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT3906S (PNP)