TRANSISTOR S PARAMETERS NOISE Search Results

TRANSISTOR S PARAMETERS NOISE Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR S PARAMETERS NOISE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GE Transistor Manual Abstract: transistor k 316 35820 transistor circuit design Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing	Original	5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design	PDF
npn UHF transistor 2N5179 Abstract: No abstract text available Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters	Original	2N5179 npn UHF transistor 2N5179	PDF
GHZ micro-X Package Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136 Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and \|S 21E\|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature	Original	AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136	PDF
high power FET transistor s-parameters Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1	PDF
electrical symbols Abstract: ScansU9X22 Text: TRANSISTOR SYMBOLS T U N G - S O L -TRANSISTOR ELECTR ICA L SYMBOLS SMALL SIGNAL AND HIGH FREQUENCY PARAMETERS AT SPECIFIED BIAS hQb Common base - output admittance, input AC o p e n -c ircu ite d hjb Common base - input impedance, output AC s h o r t - c ir c u it e d	OCR Scan		PDF
BF970 Abstract: No abstract text available Text: Temic BF970 S e m i c o n d u c t o r s Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters	OCR Scan	BF970 BF970 27-Feb-97	PDF
TRANSISTOR noise figure measurements Abstract: transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32 Text: IEEE 1990 Bipolar Circuits and Technology Meeting 10.1 THE INFLUENCE OF NON-IDEAL BASE CURRENT ON l / F NOISE BEHAVIOUR OF BIPOLAR TRANSISTORS M.C.A.M. Koolen and J.C.J. Aerts Philips Research Laboratories P.O. Box 80.000 5600 JA Eindhoven - The Netherlands	OCR Scan	ED-32, TRANSISTOR noise figure measurements transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32	PDF
BT 1840 PA Abstract: No abstract text available Text: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure	OCR Scan	bb53T31 BFG67; BFG67/X; BFG67R; BFG67/XR BFG67 BFG67/X BFG67 OT143 BFG67) BT 1840 PA	PDF
Transistor S 40443 Abstract: No abstract text available Text: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures	OCR Scan	bbS3T31 0024T37 BFG197; BFG197/X; BFG197/XR BFG197 BFG197 OT143 BFG197/X Transistor S 40443	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency	OCR Scan	bbS3T31 00ESS33 BFR520 BFR520	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors fc>b53T31 002478*1 347 « A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES • Product specification L.7E D £ BFG25A/X PINNING Low current consumption 100 g A - 1 mA PIN DESCRIPTION Code: V11 • Low noise figure	OCR Scan	b53T31 BFG25A/X BFG25A/X OT143.	PDF
Untitled Abstract: No abstract text available Text: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures	OCR Scan	bb53c 002S3bb BFT25A BFT25A	PDF
BT 816 transistor Abstract: PA 1515 transistor 9921 transistor Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure	OCR Scan	BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor	PDF
Untitled Abstract: No abstract text available Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability	OCR Scan	bb53T31 BFQ67W OT323 UBC870 OT323. OT323	PDF

philips 4859 Abstract: No abstract text available Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency	OCR Scan	bbS3T31 D05SB11 BFR505 BFR505 philips 4859	PDF
Untitled Abstract: No abstract text available Text: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency	OCR Scan	QQE5Q33 BFG541 OT223.	PDF
s8014 transistor Abstract: No abstract text available Text: Philips Semiconductors bLS3^31 0 0 2 4 ^ 10R • APX Product specification N AUER PHILIPS/DISCRETE L7E NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure PINNING PIN DESCRIPTION • High transition frequency	OCR Scan	BFG520; BFG520/X; BFG520/XR BFG520 and08 s8014 transistor	PDF
transistor 667 Abstract: No abstract text available Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2	OCR Scan	BFR93A BFT93. transistor 667	PDF
transistor bt 808 Abstract: transistor 1548 b Text: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2	OCR Scan	00250bb BFQ67 transistor bt 808 transistor 1548 b	PDF
CD074 Abstract: No abstract text available Text: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base	OCR Scan	bb53T31 BFR92A BFT92. CD074	PDF
pj 0159 Abstract: No abstract text available Text: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency	OCR Scan	BFG505; BFG505/X; BFG505/XR BFG505 BFG505 pj 0159	PDF
NPN transistor SST 117 Abstract: No abstract text available Text: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency	OCR Scan	BFR540 BFR540 NPN transistor SST 117	PDF
Untitled Abstract: No abstract text available Text: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor £ Product specification BFG93A; BFG93A/X; BFG93A/XR N AUER PHILIPS/DISCRETE b?E » “ PINNING FEATURES PIN • High power gain DESCRIPTION 4 3 BFG93A Fig.1 Code: R8 • Low noise figure	OCR Scan	bbS3131 0D24AA0 BFG93A; BFG93A/X; BFG93A/XR BFG93A BFG93 OT143 BFG93A/X	PDF
BFG33 Abstract: zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ Text: Philips Semiconductors ^ 7110 82 b D0 b 8 7 75 611 M P H IN NPN 12 GHz wideband transistor FEATURES Product specification BFG33; BFG33/X PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION	OCR Scan	711082b D0b8775 BFG33; BFG33/X BFG33 OT143 BFG33/X; MSB014 OT143. zo 107 NA P 611 RJ50 UCD123 npn transistor dc 558 RF NPN POWER TRANSISTOR C 10-12 GHZ	PDF

TRANSISTOR S PARAMETERS NOISE Search Results

TRANSISTOR S PARAMETERS NOISE Result Highlights (5)

TRANSISTOR S PARAMETERS NOISE Datasheets Context Search

GE Transistor Manual

npn UHF transistor 2N5179

GHZ micro-X Package

high power FET transistor s-parameters

electrical symbols

BF970

TRANSISTOR noise figure measurements

BT 1840 PA

Transistor S 40443

Untitled

Untitled

Untitled

BT 816 transistor

Untitled

philips 4859

Untitled

s8014 transistor

transistor 667

transistor bt 808

CD074

pj 0159

NPN transistor SST 117

Untitled

BFG33