TRANSISTOR S PARAMETERS Search Results

TRANSISTOR S PARAMETERS Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR S PARAMETERS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BULT106D High voltage fast-switching NPN power transistor Features • NPN transistor ■ Low spread of dynamic parameters s t c Applications u d o ) r s ( P t c e t u e d l Description o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u	Original	BULT106D	PDF
GE Transistor Manual Abstract: transistor k 316 35820 transistor circuit design Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing	Original	5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design	PDF
Untitled Abstract: No abstract text available Text: BUL804 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability s t c u d o ) r s ( P Description t c e t u e d l o schematicrodiagram s Internal P b e O t e l ) o s ( s t b c u O d Applications o	Original	BUL804 2002/93/EC O-220	PDF
S-816A26AMC-BABT2G Abstract: TOSHIBA 2SA1213Y RA 816 SL 100 NPN Transistor S-816 S-816A25AMC-BAAT2G S-816A27AMC-BACT2G S816A33 Text: Rev.5.0_01 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent	Original	S-816 S-816, S-816A26AMC-BABT2G TOSHIBA 2SA1213Y RA 816 SL 100 NPN Transistor S-816A25AMC-BAAT2G S-816A27AMC-BACT2G S816A33	PDF
S-816A26AMC-BABT2G Abstract: TOSHIBA 2SA1213Y S-816A27AMC-BACT2G S-816 S-816A25AMC-BAAT2G 2SA1213Y Text: Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent	Original	S-816 S-816, S-816A26AMC-BABT2G TOSHIBA 2SA1213Y S-816A27AMC-BACT2G S-816A25AMC-BAAT2G 2SA1213Y	PDF
ST13005 transistor Abstract: No abstract text available Text: s = 7 S ^7# G S - T H O M S O N Kl gKLiM(s iO(gS ST13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED	OCR Scan	ST13005 ST13005 transistor	PDF
L128D Abstract: BUL128D SC-0351 Text: n Z Z S C S -T H O M S O N ^ 7# B U L128D HIGH VOLT AG EFAST^S WÏTCHING NPN POWER TRANSISTOR . • . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION	OCR Scan	L128D BUL128D GC69490 SC-0351 BUL128D SC-0351	PDF
transistor BC 147 Abstract: BUL56D transistor bul 38 bc 147 B transistor transistor bc 325 Text: n r z S G S - T H O M S O N HO i \|[Li©fi®iDei BUL58D HIGHVOLTAGEFAST-SWIT CHING NPN POWER TRANSISTOR • . . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR	OCR Scan	BUL58D BUL58D S6S-1H0M80HI transistor BC 147 BUL56D transistor bul 38 bc 147 B transistor transistor bc 325	PDF
BUL 380 Abstract: bul510 Text: / = 7 *7# S C S - T H O M S O N d[] gi i[LI ra®IQ©i BUL510 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS VERY HIGH SWITCHING SPEED	OCR Scan	BUL510 BUL510 BUL 380	PDF
SC-0351 Abstract: No abstract text available Text: rrr “ 7# sg s -th o m s o n m m s x m iim m im m b u lth s d HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR	OCR Scan	BULT118D SC-0351 SC-0351	PDF
BUL128 Abstract: alu schematic circuit with transistor Text: S G S -T H O M S O N «l!3mi ¥[FM[]©S BUL128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • « . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION	OCR Scan	BUL128 BUL128 BUL128; 62-19C alu schematic circuit with transistor	PDF
Untitled Abstract: No abstract text available Text: S G S -T H O M S O N RfflD0lsi i[Liera®[i!lDS$ B U L T 1 18D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR	OCR Scan	SC-0351 BULT118D OT-32 O-126)	PDF
IGT4E10 Abstract: 4D10 VQE 22 VQE 12 IGT4D10 Text: IGT4D10.E10 10 AMPERES 400,500 VOLTS EQUIV. Rd S ON =0.27 il Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power M O S F E T S and	OCR Scan	IGT4D10 IGT4E10 4D10 VQE 22 VQE 12	PDF
SC-0351 Abstract: ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005 Text: SGS-THOMSON S i IHD S T 13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR	OCR Scan	O-220 ST13005 SC-0351 SC-0351 ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005	PDF

Untitled Abstract: No abstract text available Text: s = 7 SGS-THOMSON ^ 7# K l g K L iM ( s iO ( g S B U L D 1 2 8 D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS	OCR Scan	BULD128DA-1 BULD128DB-1	PDF
BUL128D Abstract: bul128db Text: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS BUL128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDERING CODES : BUL128D-A AND BUL128D-B . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR	OCR Scan	BUL128D BUL128D-A BUL128D-B BUL128D bul128db	PDF
K105 transistor Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11 Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and	OCR Scan	IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11	PDF
2SC288A Abstract: 2SC288A 5.B Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC288A 5-B UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D ISK MOLD" DESCRIPTION PACKAGE DIMENSIONS The 2 S C 2 8 8 A I5 B ) is an NPN silicon epitaxial transistor intended fo r use in m illim e te r s (inch es)	OCR Scan	2SC288A 1300MHz 400MHz 600MHz 2SC288A 5.B	PDF
6d20 Abstract: 6D-20 IGT8D20 250M BE20 IGT8E20 VQE 23 E Text: IGT8D20,E20 1ST TIM S^M OIS 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 O Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and	OCR Scan	IGT8D20 6D20- PULSEWIDTHa60 6d20 6D-20 250M BE20 IGT8E20 VQE 23 E	PDF
2SC4867 Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in	OCR Scan	ENN6117 FH201 2SC4871) 2SC4867) FH20I 2SC4871 2SC4867, FH201] 7117D7L 0D544b7 2SC4867 16T MARKING FH201 ZS21 TA-1315 1hz OUTPUT 7CJE	PDF
550MH Abstract: IGT6D10 IGT6E10 Text: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device	OCR Scan		PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF

TRANSISTOR S PARAMETERS Search Results

TRANSISTOR S PARAMETERS Result Highlights (5)

TRANSISTOR S PARAMETERS Datasheets Context Search

Untitled

GE Transistor Manual

Untitled

S-816A26AMC-BABT2G

S-816A26AMC-BABT2G

ST13005 transistor

L128D

transistor BC 147

BUL 380

SC-0351

BUL128

Untitled

IGT4E10

SC-0351

Untitled

BUL128D

K105 transistor

2SC288A

6d20

2SC4867

550MH

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227