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    TRANSISTOR RF A 5.8 GHZ A 30 WATTS Search Results

    TRANSISTOR RF A 5.8 GHZ A 30 WATTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR RF A 5.8 GHZ A 30 WATTS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Johanson Piston Trimmer

    Abstract: G200 RF TRANSISTOR 2GHZ
    Contextual Info: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 RF TRANSISTOR 2GHZ PDF

    R2C TRANSISTOR

    Contextual Info: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF

    Ericsson 20082

    Contextual Info: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    OCR Scan     		Collector-91 Ericsson 20082 PDF

    Ericsson 20082

    Abstract: 20082 PTB 20082
    Contextual Info: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    Original     		1-877-GOLDMOS 1301-PTB Ericsson 20082 20082 PTB 20082 PDF

    Ericsson 20082

    Contextual Info: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion


    Original     		1-877-GOLDMOS 1301-PTB Ericsson 20082 PDF

    transistor 20201

    Abstract: jarvis
    Contextual Info: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    OCR Scan     		PDF

    Contextual Info: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


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    8801

    Contextual Info: e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    Original     		1-877-GOLDMOS 1301-PTB 8801 PDF

    c38 transistor

    Abstract: 2160 transistor Johanson Piston Trimmer
    Contextual Info: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		BATC100) c38 transistor 2160 transistor Johanson Piston Trimmer PDF

    c38 transistor

    Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
    Contextual Info: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for


    OCR Scan     		PDF

    Johanson Piston Trimmer

    Abstract: Transistor 025l
    Contextual Info: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage


    Original     		1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer Transistor 025l PDF

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: 20174 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
    Contextual Info: e PTB 20174 90 Watts, 1400–1600 MHz RF Power Transistor Description The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP


    Original     		5801-PC 1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ PDF

    Johanson Piston Trimmer

    Abstract: G200
    Contextual Info: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200 PDF

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
    Contextual Info: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description T he 20174 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minim um output power, it may be used for both C W and PEP


    OCR Scan     		5801-PC RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ PDF

    Contextual Info: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description The 20174 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1400 to 1600 MHz frequency band. Rated at 90 watts minimum output power, it may be used for


    OCR Scan     		5801-PC PDF

    k1206

    Abstract: Ericsson B
    Contextual Info: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,


    OCR Scan     		K1206 G-200, 1-877-GOLDMOS 1301-PTF10112 k1206 Ericsson B PDF

    rf mosfet ericsson

    Abstract: k1206 cgs resistor c7
    Contextual Info: e PTF 10112 60 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,


    Original     		K1206 G-200, 1-877-GOLDMOS 1301-PTF rf mosfet ericsson k1206 cgs resistor c7 PDF

    "RF Power Transistor"

    Abstract: PTB 20264
    Contextual Info: e PTB 20264 10 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts power output, it may be used for both CW and PEP applications. Ion


    Original     		1-877-GOLDMOS 1301-PTB "RF Power Transistor" PTB 20264 PDF

    G200

    Abstract: K1206 103 smt resistor
    Contextual Info: PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.


    Original     		K1206 1-877-GOLDMOS 1301-PTF G200 K1206 103 smt resistor PDF

    acrian RF POWER TRANSISTOR

    Abstract: 58W45 2023-6T microwave amplifier 2.4 ghz 10 watts 2023-15 acrian inc
    Contextual Info: T? ACRIAN INC GENERAL DE I D lflE T T fl 000142D 4 | 2023-1.5 D E S C R IP TIO N 1.5 WATTS - 22 VOLTS 2.0-2.3 GHZ The 2023-1.5 is an internally matched common base transistor providing 3 watts of RF CW output power across the 2000-2300 MHz band. This hermetically sealed


    OCR Scan     		2023-6T lc-10mA 100mA, acrian RF POWER TRANSISTOR 58W45 2023-6T microwave amplifier 2.4 ghz 10 watts 2023-15 acrian inc PDF

    9434

    Abstract: "RF Power Transistor"
    Contextual Info: e PTB 20264 10 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB 9434 "RF Power Transistor" PDF

    Contextual Info: ERICSSON ^ PTE 20264* 10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts m inim um ou tput power, it m ay be used fo r both CW and PEP


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    transistor d 1557

    Contextual Info: ERICSSON ^ PTF 10021 30 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for linear driver and final applica­ tions in the 1.4 to 1.6 GHz range such as DAB/DAR. it is rated at 30


    OCR Scan     		G-200, transistor d 1557 PDF

    smt a1 transistor

    Abstract: A1234 G200 PTF 10021
    Contextual Info: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is


    Original     		1-877-GOLDMOS 1301-PTF smt a1 transistor A1234 G200 PTF 10021 PDF