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    TRANSISTOR R9D CA Search Results

    TRANSISTOR R9D CA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R9D CA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AL9910EV7 User Guide 120VAC Dimmable Evaluation Evaluation Board AL9910EV7 Figure 1: Top-View Evaluation Board Features •        TRIAC Dimmable (compatible with most dimmers) Work for both forward or reverse phase dimmers Wide dimming range from full brightness to around ~10%


    Original     		PDF AL9910EV7 120VAC AL9910EV7) W-13W PAR38, PAR30, AL9910A AL9910A

    transistor SMD R4d

    Abstract: No abstract text available
    Text: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;


    Original     		PDF IRS2093M IRF6665 transistor SMD R4d

    transistor smd c5c

    Abstract: transistor SMD R4d SMD diode C5C smd transistor r4D smd transistor R2C smd diode r4a MLQP48 smd transistor r4c r2d SMD Transistor IRS2093
    Text: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;


    Original     		PDF IRS2093M IRF6665 transistor smd c5c transistor SMD R4d SMD diode C5C smd transistor r4D smd transistor R2C smd diode r4a MLQP48 smd transistor r4c r2d SMD Transistor IRS2093

    48v battery charger schematic diagram

    Abstract: schematic diagram 48v battery charger schematic diagram 48V battery charger regulator Linear Applications Handbook National Semiconductor BATTERY CHARGER RELAY CUT OFF 6v dc charger with cut off diagram UC384x battery charger lm317 pnp Transistor lm317 TO92 R26 transistor
    Text: CHAPTER 3 HARDWARE CIRCUITRY AND THEORY OF OPERATION INTRODUCTION The Smart Battery Charger Evaluation Board schematic diagram and other related drawings are provided in Appendix B. The discussion below uses the reference designations of the evaluation board schematic when describing circuit function.


    Original     		PDF RS-232C 48v battery charger schematic diagram schematic diagram 48v battery charger schematic diagram 48V battery charger regulator Linear Applications Handbook National Semiconductor BATTERY CHARGER RELAY CUT OFF 6v dc charger with cut off diagram UC384x battery charger lm317 pnp Transistor lm317 TO92 R26 transistor

    lm317 TO92

    Abstract: BATTERY CHARGER RELAY CUT OFF nimh charger lm317 48v regulator by lm317 48v battery charger schematic diagram lm317 pnp Transistor LM317 high current Linear Applications Handbook National Semiconductor schematic diagram 48V battery charger regulator schematic diagram 48v battery charger
    Text: CHAPTER 3 HARDWARE CIRCUITRY AND THEORY OF OPERATION INTRODUCTION The Smart Battery Charger Evaluation Board schematic diagram and other related drawings are provided in Appendix B. The discussion below uses the reference designations of the evaluation board schematic when describing circuit function.


    Original     		PDF RS-232C UM009501-0201 lm317 TO92 BATTERY CHARGER RELAY CUT OFF nimh charger lm317 48v regulator by lm317 48v battery charger schematic diagram lm317 pnp Transistor LM317 high current Linear Applications Handbook National Semiconductor schematic diagram 48V battery charger regulator schematic diagram 48v battery charger

    RO3010

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 RO3010

    12v DC MOTOR SPEED CONtrol ic OF 8PIN

    Abstract: bldc electric drive spindle ssd1001 4 npn transistor ic 14pin sensorless circuit 3 phase bldc motor driver mosfet 3-Phase BLDC Motor Driver 150 rpm Hard Disk Drive voice coil Hard Disk spindle motor mtron
    Text: www.fairchildsemi.com KA2811C 12V Spindle Motor and Voice Coil Motor Driver Features Description SMP Circuit The KA2811C is a monolithic one-chip IC which includes SPM Spindle motor driver, VCM (Voice coil motor) driver and peripheral driver, designed for driving HDD motor. For


    Original     		PDF KA2811C KA2811C 12v DC MOTOR SPEED CONtrol ic OF 8PIN bldc electric drive spindle ssd1001 4 npn transistor ic 14pin sensorless circuit 3 phase bldc motor driver mosfet 3-Phase BLDC Motor Driver 150 rpm Hard Disk Drive voice coil Hard Disk spindle motor mtron

    12v 500ma center tap transformer

    Abstract: ccfl backlight controller schematic CCFL backlight driver ccfl driver schematic MARKING EA1 ccfl driver AME9003AETH QSOP-24 6740k AME9002
    Text: AME, Inc. AME9003 ry na i lim e r P n General Description CCFL Backlight Controller n Pin Configuration The AME9003 is AME’s next generation direct drive CCFL controller. Like its cousins, the AME9001 and AME9002, the AME9003 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL , driving 3 external MOSFETs that,


    Original     		PDF AME9003 AME9003 AME9001 AME9002, AME9003, AME9002 2023-DS9003-A 12v 500ma center tap transformer ccfl backlight controller schematic CCFL backlight driver ccfl driver schematic MARKING EA1 ccfl driver AME9003AETH QSOP-24 6740k

    ccfl backlight controller schematic

    Abstract: 24 ccfl tube ssv 620 ccfl driver schematic pwm variable frequency drive circuit diagram chop C3211 12v schematic of backlights ccfl ccfl BACKLIGHT LAMP Royer oscillator circuit diagram star delta FORWARD / REVERSE WIRING CONNECTION
    Text: AME, Inc. y inar m i l Pre AME9003 n General Description CCFL Backlight Controller n Pin Configuration The AME9003 is AME’ s next generation direct drive CCFL controller. Like its cousins, the AME9001 and AME9002, the AME9003 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL , driving 3 external MOSFETs that,


    Original     		PDF AME9003 AME9003 AME9001 AME9002, AME9003, AME9002 2023-DS9003-D ccfl backlight controller schematic 24 ccfl tube ssv 620 ccfl driver schematic pwm variable frequency drive circuit diagram chop C3211 12v schematic of backlights ccfl ccfl BACKLIGHT LAMP Royer oscillator circuit diagram star delta FORWARD / REVERSE WIRING CONNECTION

    transistor R1A 37

    Abstract: 5233 mosfet J146 VJ1210y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y

    C3B Kemet

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R5 C3B Kemet

    ssd1001

    Abstract: HDD spindle motor circuit SSD1002 pump motor 12v datasheet spindle motor circuit sensorless circuit SSD2003 1.5A 2A voice coil Driver "BANDGAP REFERENCE" cross bldc electric drive spindle
    Text: www.fairchildsemi.com KA2811C 12V Spindle Motor and Voice Coil Motor Driver Features Description SMP Circuit The KA2811C is a monolithic one-chip IC which includes SPM Spindle motor driver, VCM (Voice coil motor) driver and peripheral driver, designed for driving HDD motor. For


    Original     		PDF KA2811C KA2811C ssd1001 HDD spindle motor circuit SSD1002 pump motor 12v datasheet spindle motor circuit sensorless circuit SSD2003 1.5A 2A voice coil Driver "BANDGAP REFERENCE" cross bldc electric drive spindle

    transmitter 446 mhz

    Abstract: R5B transistor J960 470-860 mhz Power amplifier w
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w

    MRF372

    Abstract: MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 MRF372 MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010

    j1430

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 MRF372R5 j1430

    R4A marking

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R5 R4A marking

    RO3010

    Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
    Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372R3 MRF372R5 MRF372R3 MRF372 RO3010 marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 MRF372/D

    C14A

    Abstract: MRF372 R5B transistor C10A 473 coilcraft d j937
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372/D MRF372 C14A MRF372 R5B transistor C10A 473 coilcraft d j937

    balun 75 ohm

    Abstract: C14A RO3010 MRF372 c9ab
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 balun 75 ohm C14A RO3010 MRF372 c9ab

    C3B Kemet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372/D 31anufacture MRF372 C3B Kemet

    marking c14a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a

    MRF372

    Abstract: C14A MRF372R5 transmitter 446 mhz TRANSISTOR 1003
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372/D MRF372 MRF372R5 MRF372 C14A MRF372R5 transmitter 446 mhz TRANSISTOR 1003

    marking c14a

    Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device