TRANSISTOR R55 Search Results

Contextual Info: R5527K SERIES 3A Load Switch IC NO. EA-312-130122 OUTLINE The R5527K Series are N-channel load switch ICs with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state

Contextual Info: R5527K SERIES 3A Load Switch IC NO. EA-312-140124 OUTLINE The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state are realized.

12-CE 519

Abstract: 2569s
Contextual Info: R5540K SERIES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state

Contextual Info: R5 5 4 0 K SERI ES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state

M 9639 transistor

Abstract: application IC 7411 SiS 486
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

marking r55

Abstract: K 608 2SC5455 1117 transistor 0340 180
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications +0.2 +0.2 3 2 1.5 –0.1 Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage

2SC5752

Abstract: 2SC5752-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

ne678m04-a

Abstract: 2SC5753
Contextual Info: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

2SC5753

Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

Contextual Info: SGS-THOMSON 3 2 N 5657 IMDeiRi i[LiCTI ®[i!lDS$ SILICON NPN TR A N SISTO R . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current,

j 6815 transistor

Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm

TRANSISTOR J 6815 EQUIVALENT

Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm

transistor marking R57 ghz

Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm

NE664M04

Abstract: 2SC5753
Contextual Info: PRELIMINARY DATA SHEET MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE678M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55

R5524N001

Abstract: R5524N002 r5524n
Contextual Info: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-100618 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current

R5524N

Contextual Info: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-130111 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current

R5528Z001A-E2-F

Abstract: r5528z001 313130 R5528Z
Contextual Info: R5528Z SERIES OVERVOLTAGE PROTECTION SWITCH IC NO.EA-313-130218 OUTLINE The R5528Z Series are CMOS-based overvoltage protection switch ICs that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as 6.8V±3%. Also,

Contextual Info: R5528Z SERIES OVERVOLTAGE PROTECTION SWITCH IC NO.EA-313-130111 OUTLINE The R5528Z Series are CMOS-based overvoltage protection switch ICs that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as 6.8V±3%. Also,

R5524N004A

Abstract: R5524N004 R5524N001 R5524N R5524N002A
Contextual Info: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-111212 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current

R5524N001

Abstract: AT/R5524N002A
Contextual Info: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-100924 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Id e a l for m e d iu m -o u tp u t ap p lic atio n s • High g ain , low noise • S m a ll re v e rs e tra n s fe r c a p a c ita n c e

R5528Z

Abstract: wireless charger
Contextual Info: R5528Z SERIES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130418 OUTLINE The R5528Z Series are CMOS-based overvoltage protector ICs with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as

R5528Z001A

Contextual Info: R5528Z SERIES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as

2SC5753

Abstract: NE678M04 NE678M04-T2-A S21E IC pt 2262 ic nec 2051
Contextual Info: NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55 1 NEC's NE678M04 is fabricated using NEC's HFT3 wafer