TRANSISTOR R5 Search Results

germanium transistors PNP

Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: rZ 7 SCS-THOMSON ^ 7 # 6Sll!CISl ilLIIISin3©RSD6S BU R50S HIGH CURRENT NPN SILICON TRANSISTOR . . • . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED ^*9 APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

BY206

Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

BY206

Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

BLW33

Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

BLW98

Abstract: blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in

transistor gl 1117

Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

Diode Equivalent 1n4148

Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148
Contextual Info: Philips Semiconductors Product specification Microwave Transistors General APPLICATION INFORMATION COMPONENT DESCRIPTION VALUE A amplifier D.U.T. microwave transistor TR transistor D diode C 1,C 2 tantalum capacitor 22 nF, 50 V R1 resistor 2.2 kß ±5% R2, R3, R5, R6

transistor gl 1117

Abstract: trimmer 3-30 pf BLW60C MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial

NEC NF 932

Abstract: 2SC4092
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.

BD443

Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

BLW83

Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and

BD443

Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

2SC4092

Abstract: of IC 4013 n NEC NF 932 marking R4
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.

Philips polystyrene capacitors

Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB

transistor D 2588

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.

BY206

Abstract: blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.

Philips polystyrene capacitor

Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
Contextual Info: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear

BLW85

Abstract: gp550 SOt123 Package TP200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and

Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

BLF888

Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Contextual Info: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

Contextual Info: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W