TRANSISTOR R2A Search Results

1415 ic

Abstract: 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: ERICSSON ^ PTB 20173 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and

Contextual Info: ERICSSON ^ E 20080* 25 Watts, 1.6-1.7 GHz RF Power Transistor Description The 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP

TIC55

Contextual Info: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 915 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20193 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor D escription The 20193 is a class AB, NPN com m on em itter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minim um output power and may be used for both CW and PEP

MM-222

Abstract: photo flash capacitor
Contextual Info: AMOS TECHNOLOGY LIMITED R2a MM222 LIGHT-SENSE WITH LED DRIVER by external photo transistor DATA SHEET FEATURES • • • • • • • Wide battery operating voltage range : 2.4V to 5.1V. Typical operating current : 100uA, VDD = 3.0V. Flashing LED upon valid detection

transistor 131 8D

Abstract: TRANSISTOR MARKING CODE R2A 2N3906 UMT3906 2n3906 hie 2n3906 transistors transistor 2n3906 2N3904 MMST3904 MMST3906
Contextual Info: UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906 !External dimensions Units : mm !Features 1) BVCEO < -40V (IC=-1mA) 2) Complements the UMT3904 / SST3904 / MMST3904 / 2N3904. 2.0±0.2

umt3906

Abstract: TRANSISTOR MARKING CODE R2A Marking r2a MMST3906W T3904 MMST3906 SST3906 T106 T116 T146
Contextual Info: UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 zDimensions Unit : mm zFeatures 1) BVCEO > −40V (IC= −1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. UMT3906 (1) Emitter (2) Base (3) Collector

BF180

Abstract: 250N HA5013 MM5013 HARRIS SEMICONDUCTOR
Contextual Info: Harris Semiconductor No. MM5013.1 Harris Linear May 1996 HA5013 SPICE Macromodel CFA Authors: Ronald Mancini and Chris Henningsen Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

Mancini* CFA

Abstract: 250N HA5023 HARRIS SEMICONDUCTOR Mancini DP104
Contextual Info: Harris Semiconductor No. MM5023 Harris Linear May 1996 HA5023 SPICE Macromodel CFA Authors: Ronald Mancini and Steve Jost Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

Mancini

Abstract: Mancini* CFA 250N HA5025 HARRIS SEMICONDUCTOR MM5025
Contextual Info: Harris Semiconductor No. MM5025.1 Harris Linear September 1996 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

Mancini* CFA

Abstract: 250N HA5025 BF180
Contextual Info: Harris Semiconductor No. MM5025.2 Harris Linear August 1997 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

Transistor 2Ay

Abstract: PNP 2ay 2AY SOT-23
Contextual Info: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW B C Mechanical Data

marking c14a

Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

250N

Abstract: HA5022
Contextual Info: Harris Semiconductor No. MM5022 Harris Linear April 1996 HA5022 SPICE Macromodel CFA Authors: Ronald Mancini and Jeff Lies Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order

npn k3n

Abstract: k3n transistor DS30059 MMBT3904 MMBT3906 marking K3N
Contextual Info: MMBT3906 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 -H .h - a TOF? VIEW

250N

Abstract: HA5024 BF180 dp104
Contextual Info: Harris Semiconductor No. MM5024.1 Harris Linear September 1996 HA5024 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order

Contextual Info: I Ordering number: EN2471A 2SC4106 N0.247IA NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . . . . High breakdown voltage and high reliability Fast switching speed Wide ASO Adoption of MBIT process Absolute Maxim» Ratings at Ta=25°C

RO3010

Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

BT3906

Abstract: BT3904
Contextual Info: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

marking c14a

Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Contextual Info: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

SzM2166

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM - 238
Contextual Info: Advanced Information Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs