TRANSISTOR R1A Search Results

Contextual Info: ERICSSON ^ PTB 20206 1.0 Watt, 470-860 MHz RF Power Transistor D escription The 20206 is a class A, NPN, common emitter RF power transistor intended for 20 Vdc operation across the 470 to 860 MHz frequency band. Rated at 1.0 w att minimum output power, it may be used for

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

Contextual Info: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

lc 945 p transistor NPN TO 92

Contextual Info: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

TIC 122 Transistor

Abstract: transistor R1A
Contextual Info: ERICSSON ^ PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor D escription The E 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP

RF NPN POWER TRANSISTOR C 10-12 GHZ

Contextual Info: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is

Contextual Info: ERICSSON $ PTB 20249 2.5 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The 20249 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

transistor cq 415

Contextual Info: ERICSSON ^ PTB 20239 12 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPNI, com m on em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz Rated at 12 watts minimum output power, it m ay be used for both CW

Contextual Info: ERICSSON 0 PTB 20248 0.7 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor D escription The 20248 is a class A, NPN, com m on em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7 w atts minimum output power, it m ay be used for both CW and PEP

transistor HD marking

Contextual Info: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. Dimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3

SST3904

Abstract: UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 SST3906 T106 T116
Contextual Info: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3

BF180

Abstract: 250N HA5013 MM5013 HARRIS SEMICONDUCTOR
Contextual Info: Harris Semiconductor No. MM5013.1 Harris Linear May 1996 HA5013 SPICE Macromodel CFA Authors: Ronald Mancini and Chris Henningsen Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

J239 mosfet transistor

Abstract: L1AB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

Mancini* CFA

Abstract: 250N HA5023 HARRIS SEMICONDUCTOR Mancini DP104
Contextual Info: Harris Semiconductor No. MM5023 Harris Linear May 1996 HA5023 SPICE Macromodel CFA Authors: Ronald Mancini and Steve Jost Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

Mancini* CFA

Abstract: 250N HA5025 BF180
Contextual Info: Harris Semiconductor No. MM5025.2 Harris Linear August 1997 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

1am3

Abstract: transistor 1am3 sot-23 marking 1AM3 k1n sot-23 marking
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19

Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim A Min Max 0.37 0.51 B 1.19

BT3904

Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T3906 Ideal for Medium Power Amplification and Switching SOT-23 -H : h~A TO P VIEW Mechanical Data_ • •

marking c14a

Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

250N

Abstract: HA5022
Contextual Info: Harris Semiconductor No. MM5022 Harris Linear April 1996 HA5022 SPICE Macromodel CFA Authors: Ronald Mancini and Jeff Lies Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order

marking c14a

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

250N

Abstract: HA5024 BF180 dp104
Contextual Info: Harris Semiconductor No. MM5024.1 Harris Linear September 1996 HA5024 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order

Contextual Info: ERICSSON ^ PTE 10101* 60 Watts, 1.0 GHz LDMOS Field Effect Transistor Description Performance at 960 MHz, 28 Volts - Output Power = 60 Watts - Power Gain = 12.0 dB Typ - Efficiency = 55% Typ Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage

J297

Abstract: mallory 150 series MRF899 BD136 5659065-3B
Contextual Info: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating