TRANSISTOR R1A Search Results

TRANSISTOR R1A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR R1A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. Dimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3	Original	UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904	PDF
SST3904 Abstract: UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 SST3906 T106 T116 Text: UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 zFeatures 1 BVCEO > 40V IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906. zDimensions (Unit : mm) UMT3904 (1) Emitter (2) Base (3) Collector ROHM : UMT3	Original	UMT3904 SST3904 MMST3904 UMT3906 SST3906 MMST3906. UMT3904 marking CODE r1a transistor R1A marking "3D 0D" MMST3904 MMST3906 T106 T116	PDF
BF180 Abstract: 250N HA5013 MM5013 HARRIS SEMICONDUCTOR Text: Harris Semiconductor No. MM5013.1 Harris Linear May 1996 HA5013 SPICE Macromodel CFA Authors: Ronald Mancini and Chris Henningsen Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to	Original	MM5013 HA5013 1-800-4-HARRIS BF180 250N HARRIS SEMICONDUCTOR	PDF
J239 mosfet transistor Abstract: L1AB Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF374A MRF374A J239 mosfet transistor L1AB	PDF
Mancini* CFA Abstract: 250N HA5023 HARRIS SEMICONDUCTOR Mancini DP104 Text: Harris Semiconductor No. MM5023 Harris Linear May 1996 HA5023 SPICE Macromodel CFA Authors: Ronald Mancini and Steve Jost Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to	Original	MM5023 HA5023 1-800-4-HARRIS Mancini* CFA 250N HARRIS SEMICONDUCTOR Mancini DP104	PDF
Mancini Abstract: Mancini* CFA 250N HA5025 HARRIS SEMICONDUCTOR MM5025 Text: Harris Semiconductor No. MM5025.1 Harris Linear September 1996 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to	Original	MM5025 HA5025 1-800-4-HARRIS Mancini Mancini* CFA 250N HARRIS SEMICONDUCTOR	PDF
Mancini* CFA Abstract: 250N HA5025 BF180 Text: Harris Semiconductor No. MM5025.2 Harris Linear August 1997 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to	Original	MM5025 HA5025 1-800-4-HARRIS Mancini* CFA 250N BF180	PDF
1am3 Abstract: transistor 1am3 sot-23 marking 1AM3 k1n sot-23 marking Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19	Original	MMBT3904 MMBT3906) OT-23 OT-23, MIL-STD-202, 100MHz DS30036 1am3 transistor 1am3 sot-23 marking 1AM3 k1n sot-23 marking	PDF
Untitled Abstract: No abstract text available Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim A Min Max 0.37 0.51 B 1.19	Original	MMBT3904 MMBT3906) OT-23 OT-23, MIL-STD-202, 100MHz DS30036	PDF
marking c14a Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001	PDF
250N Abstract: HA5022 Text: Harris Semiconductor No. MM5022 Harris Linear April 1996 HA5022 SPICE Macromodel CFA Authors: Ronald Mancini and Jeff Lies Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order	Original	MM5022 HA5022 250N	PDF
marking c14a Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a	PDF
250N Abstract: HA5024 BF180 dp104 Text: Harris Semiconductor No. MM5024.1 Harris Linear September 1996 HA5024 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order	Original	MM5024 HA5024 250N BF180 dp104	PDF
J297 Abstract: mallory 150 series MRF899 BD136 5659065-3B Text: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating	Original	MRF899/D MRF899 J297 mallory 150 series MRF899 BD136 5659065-3B	PDF

RF NPN POWER TRANSISTOR 3 GHZ 200 watts Abstract: No abstract text available Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended	OCR Scan		PDF
lc 945 p transistor NPN TO 92 Abstract: No abstract text available Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended	OCR Scan		PDF
TIC 122 Transistor Abstract: transistor R1A Text: ERICSSON ^ PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor D escription The E 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
RF NPN POWER TRANSISTOR C 10-12 GHZ Abstract: No abstract text available Text: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is	OCR Scan	ATC-100 G-200 BCP56 RF NPN POWER TRANSISTOR C 10-12 GHZ	PDF
Untitled Abstract: No abstract text available Text: ERICSSON $ PTB 20249 2.5 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The 20249 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
transistor cq 415 Abstract: No abstract text available Text: ERICSSON ^ PTB 20239 12 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPNI, com m on em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz Rated at 12 watts minimum output power, it m ay be used for both CW	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON 0 PTB 20248 0.7 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor D escription The 20248 is a class A, NPN, com m on em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7 w atts minimum output power, it m ay be used for both CW and PEP	OCR Scan		PDF
transistor HD marking Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	HN3C14F transistor HD marking	PDF
BT3904 Abstract: No abstract text available Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T3906 Ideal for Medium Power Amplification and Switching SOT-23 -H : h~A TO P VIEW Mechanical Data_ • •	OCR Scan	MMBT3904 T3906) OT-23 IL-STD-202, 100MHz 100nA, 300ns, DS30036 BT3904	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTE 10101* 60 Watts, 1.0 GHz LDMOS Field Effect Transistor Description Performance at 960 MHz, 28 Volts - Output Power = 60 Watts - Power Gain = 12.0 dB Typ - Efficiency = 55% Typ Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage	OCR Scan	P4917-ND P5276 20AWG,	PDF

TRANSISTOR R1A Search Results

TRANSISTOR R1A Result Highlights (5)

TRANSISTOR R1A Datasheets Context Search

Untitled

SST3904

BF180

J239 mosfet transistor

Mancini* CFA

Mancini

Mancini* CFA

1am3

Untitled

marking c14a

250N

marking c14a

250N

J297

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

lc 945 p transistor NPN TO 92

TIC 122 Transistor

RF NPN POWER TRANSISTOR C 10-12 GHZ

Untitled

transistor cq 415

Untitled

transistor HD marking

BT3904

Untitled