TRANSISTOR QP Search Results

Contextual Info: 7qqigii3 0005171 qpq TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

2n4261

Abstract: 2N426 M1515
Contextual Info: 2N 4261 Transistor by SEMICOA Semiconductors http://semicoa.com/transist/2n426 i .htm a semicoR SEMICONDUCTORS 2N4261 Transistor Case: TO-72 Qual Level: JAN - JANS Chip Geometry: 0014 Polarity: PNP The 2N4261 is a fast-switching, small signal silicon transistor.

Contextual Info: MSR2N2222AUA Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222AUA device in a UA package, is ideal to

Contextual Info: MVR2N2222AUA Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222AUA device in a UA package, is ideal to

Contextual Info: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic

Contextual Info: MVR2N2222AUB / UBC Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic

Contextual Info: MSR2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,

Contextual Info: MSR2N3700UB Screened Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700UB 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,

MSR2N2907A

Contextual Info: MSR2N2907A L Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907A(L) 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a TO-206AA package, is ideal to

Contextual Info: MSR2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive

Contextual Info: MVR2N2222A L Qualified Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222A device in a TO-206AA package, is

2N2907AUB

Contextual Info: MSR2N2907AUB / UBC Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUB 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive

Contextual Info: MSR2N2222A L Qualified Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222A in a TO-206AA package, is ideal to

2N2369AU

Contextual Info: MSR2N2369AUA Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUA 100 Krad 100 Krad DESCRIPTION This RHA level high speed NPN switching transistor, 2N2369A in a UA package, is ideal to

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

BLW 82

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

Contextual Info: MSR2N2369AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUB 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to

TRANSISTOR G13

Abstract: c 939 transistor bf 4556 d BF939
Contextual Info: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor isolated version of PHP3N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

NES6294Z

Contextual Info: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors

BF245 A spice

Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
Contextual Info: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and

NSG2555

Abstract: TRANSISTOR T4
Contextual Info: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a plastic SOT23 envelope. • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.