70V AC to 48v dc 40 amp converter circuit diagram
Abstract: No abstract text available
Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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LT3781
350kHz
300kHz
LT3710
LTC3728
550kHz,
3781f
70V AC to 48v dc 40 amp converter circuit diagram
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GHM3045
Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3
Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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LT3781
350kHz
LTC1929
300kHz
LT3710
LTC3728
550kHz,
3781f
GHM3045
FZT690
ltc 3781
SI4450
optocoupler Iso1
BAS21
BAT54
LT3781
MMBD914LT1
MURS120T3
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ltc 3781
Abstract: 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4
Text: Final Electrical Specifications LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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LT3781
350kHz
LTC1922-1
LTC1929
300kHz
LTC3728
550kHz,
3781i
ltc 3781
2kw mosfet
half bridge converter 2kw
planar transformer theory
planar transformer theory P1976
LT 450 mbr
2kw power supply
C3781
WE MIDCOM
0.25w resistor 1/4
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4 npn transistor ic 14pin
Abstract: C10535E PA103 lowest noise audio NPN transistor
Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:
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PA103
PA103B:
PA103G:
14-pin
PA103
4 npn transistor ic 14pin
C10535E
lowest noise audio NPN transistor
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Diode marking CODE 5M
Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPWT1G
500mA
Diode marking CODE 5M
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
LDTDG12GPWT1G
LDTDG12GPWT3G
diode 50M marking code
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SC-75
Abstract: KN4L3M
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package • Resistors built-in type 0.3 +0.1 –0 0.15 +0.1 –0.05 • Complementary to KA4xxx PACKAGE KN4xxx SC-75 (USM) 1.6 ± 0.1
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SC-75
SC-75
KN4L3M
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20M diode zener
Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPT1G
500mA
SC-89
463C-01
463C-02.
20M diode zener
102k1k
LDTDG12GPT1G
SC-89
transistor collector diode protection
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KN4L3M
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 ± 0.05 • Compact package 0.1 +0.1 –0.05 • Resistors built-in type ORDERING INFORMATION 0.8 ± 0.1 1.6 ± 0.1 • Complementary to KN4xxx
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SC-75
KN4L3M
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102k1k
Abstract: 20M diode zener LDTDG12GPLT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPLT1G
500mA
OT-23
102k1k
20M diode zener
LDTDG12GPLT1G
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SC-75
Abstract: kn4a4m KN4L3M
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 ± 0.05 • Resistors built-in type 0.1 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE 3 0.8 ± 0.1 1.6 ± 0.1
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SC-75
SC-75
kn4a4m
KN4L3M
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KN4A4L
Abstract: SC-75 KN4L3M
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KN4xxx 3 0.8 ± 0.1 1.6 ± 0.1
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SC-75
KN4A4L
SC-75
KN4L3M
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7-segment display driver
Abstract: NTE2023 700 v power transistor NTE202
Text: NTE2023 Integrated Circuit General Purpose, High Current 7–Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
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NTE2023
NTE2023
500mW
7-segment display driver
700 v power transistor
NTE202
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transistor Common collector configuration
Abstract: "7 Segment Display" NTE2023 transistor Common Base connection 700 v power transistor
Text: NTE2023 Integrated Circuit General Purpose, High Current 7−Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16−Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
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NTE2023
NTE2023
16-Lead
500mW
transistor Common collector configuration
"7 Segment Display"
transistor Common Base connection
700 v power transistor
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74als power consumption
Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
Text: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low
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BA6251
Abstract: BA6250 BA6250F BA6251F DIP162
Text: Standard ICs 7-channel Darlington transistor array BA6250 / BA6250F / BA6251 / BA6251F The BA6250, BA6250F, BA6251, and BA6251F are 7-channel transistor arrays particularly suitable for interfaces between a microcomputer in a VCR and the various ICs, or between one IC and another, and for low current drives
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BA6250
BA6250F
BA6251
BA6251F
BA6250,
BA6250F,
BA6251,
BA6251F
BA6250F
DIP162
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74als power consumption
Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
Text: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/
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DM54/74)
DM54/
DM54/74LS
74als power consumption
74AS
TTL SERIES 74AS
74AS Characteristics
AN-476
Complete for 74LS family
74AS SERIES
pnp transistor 1000v
74AS fan-out
74ls series logic family
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FT1551
Abstract: FT2551 fujitsu ring emitter
Text: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara
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37417fe2
-r-33
FT1551
FT1E51
FT2551,
85MHz
T-33-09
FT2551
fujitsu ring emitter
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Mitsubishi transistor
Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Text: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B
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QM1000HA-24B
1000H
Mitsubishi transistor
transistor 1015
K 192 A transistor
diode 210q
k 1 transistor
mitsubishi power Modules
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J493
Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
Text: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested
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bS3T31
BLX13
70MHz
J493
BLX13
philips 3h1
ic hf 3487
4312 020 36620
VHF IF 70MHz
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nte74s571
Abstract: NTE74HC573 NTE74HC574 NTE74HCT573 NTE74S474 NTE74S573 512x8 PROM NTE74LS541 NTE74S472 NTE74LS490
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling NTE74LS445 16-Lead DIP, See Diag. 249 BCD-to-Decimal Decoder/Driver w/Open Collector Outputs NTE74S472 20-Lead DIP, See Diag. 294
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NTE74426
14-Lead
NTE74S474,
NTE74S475
4096-Bit
512x8)
NTE74S474:
NTE74S475:
NTE74LS445
16-Lead
nte74s571
NTE74HC573
NTE74HC574
NTE74HCT573
NTE74S474
NTE74S573
512x8 PROM
NTE74LS541
NTE74S472
NTE74LS490
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NTE74LS244
Abstract: NTE74HCT244 NTE74HC259
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register Serial Input K m ^ Serial Input J £ 2 ^ v cc Shift/Load 3 Input H Input A E QA | H QH Input B [ ^ OB | NTE74221, 16-Lead DI P, See Diag. 249
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NTE74199
24-Lead
NTE74221,
16-Lead
NTE74C221,
NTE74LS221
NTE74C240,
20-Lead
NTE74HC240,
NTE74LS244
NTE74HCT244
NTE74HC259
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transistor d 1556
Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Text: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly
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flE35b05
T0119.
q62701-f87
y12bl
transistor d 1556
d 1556 transistor
transistor af 126
AF279S
transistor 1555
UHF pnp transistor
AF279
PNP UHF transistor
AF 279
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EC900
Abstract: BLW99 2 TMT 15-4
Text: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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OT-121.
BLW99
711GflSb
EC900
BLW99
2 TMT 15-4
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transistor BC 247
Abstract: BC 247 b transistor
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445
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NTE74426
14-Lead
NTE74LS445
16-Lead
NTE74S474,
24-Lead
NTE74S475
4096-Bit
NTE74HC574,
20-Lead
transistor BC 247
BC 247 b transistor
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