TRANSISTOR Q34 Search Results

LT1185

Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
Contextual Info: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense

Contextual Info: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA

LT1185CT

Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
Contextual Info: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA

LT1185

Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
Contextual Info: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special

Contextual Info: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special

LT1120A

Abstract: lt1185ct 2A 12v Low Dropout Regulator 5-Lead Plastic DD Pak ltc Q input 220 ac output 30v dc 0.5a LT1185 LT1185C LT1185CQ LT1185I LT1185IT
Contextual Info: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of a FET pass element with significantly less die area. High efficiency is maintained by using special

marking code 1p

Contextual Info: 72QM2 R1Q3A7236ABG / R1Q3A7218ABG Series R1Q3A7236ABG R1Q3A7218ABG 72-Mbit QDR II SRAM 4-word Burst R10DS0176EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory

Contextual Info: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory

Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44324185B-A, 44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

PD44324185BF5-E35-FQ1

Contextual Info: Datasheet PD44324185B-A μPD44324365B-A 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0037EJ0100 Rev.1.00 Sep 10, 2010 Description The μPD44324185B-A is a 2,097,152-word by 18-bit and the μPD44324365B-A is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

TRANSISTOR D2102

Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
Contextual Info: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and

pot core inductor

Abstract: 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RC4391 RV4391 Stackpole ferrite
Contextual Info: www.fairchildsemi.com RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability • 8-lead mini-DIP or S.O. package • Versatile —

Operational Transconductance Amplifier pspice

Abstract: transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

2N33904

Abstract: 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391
Contextual Info: PRODUCT SPECIFICATION RC4391 Pin Descriptions Pin Assignments LBR 1 8 VFB Pin Number Pin Function Description LBD 2 7 VREF 1 Low Battery Resistor LBR CX 3 6 +VS 2 Low Battery Detector (LBD) 3 Timing Capacitor (CX) 4 Ground 5 External Inductor (LX) 6 +Supply Voltage (+VS)

transisTOR C124

Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 transistor directory TR BC 548 TI 121 Transistor opa660 pspice transistor c202
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

IC AND GATE 7408

Abstract: IC 7408 pin DIAGRAM OF IC 7408 IC 7408 application circuit function IC 7408 7408 voltage regulator T310 kemet 7408 ic diagram IC 7408 and function IC 7408 AND
Contextual Info: INTRODUCTION Timing functions until recently have been somewhat neglected by integrated circuit manufacturers The primary reason was the extremely wide range of input and output signals currently incorporated in discrete designs In addition power supply voltages varied over a ten to one range

AN-97

Abstract: T310 kemet LM222 "Optical Coupler" KEMET T310 T310 tantalum AN007408 scr firing circuit ac regulator LP9A1A data sheet of lm3905
Contextual Info: National Semiconductor Application Note 97 December 1973 INTRODUCTION Timing functions, until recently, have been somewhat neglected by integrated circuit manufacturers. The primary reason was the extremely wide range of input and output signals currently incorporated in discrete designs. In addition,

2N3055 series voltage regulator

Abstract: 2n3055 voltage regulator circuit diagram of 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power supply circuit terminals of 2n3055 2N3055 power amplifier circuit pin configuration transistor 2n3055 NPN Transistor 2N3055 darlington positive negative voltage regulator variable
Contextual Info: National Semiconductor Application Note 82 May 1974 INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying dual power supply designs. Operation requires few or no external components depending on the application. Internal settings provide fixed output

2N2906 zener

Abstract: TIP73 RC4190D 2N2907 2N3904 MBR140P RC4190 RC4391 RM4190 ferroxcube Ee core
Contextual Info: Electronics Semiconductor Division RC4190 Micropower Switching Regulator Features • • • • • High efficiency – 85% typical Low quiescent current – 215 µA Adjustable output – 1.3V to 30V High switch current – 200 mA Bandgap reference – 1.31V

DIODE Z1 04 833 motorola

Abstract: MBR140P 2N2907 2N3904 RC4190 RC4391 RM4190 TIP73 ferroxcube Ee core inductance meter
Contextual Info: www.fairchildsemi.com RC4190 Micropower Switching Regulator Features • • • • • High efficiency – 85% typical Low quiescent current – 215 mA Adjustable output – 1.3V to 30V High switch current – 200 mA Bandgap reference – 1.31V • • •

SCHEMATIC DIAGRAM OF POWER SAVER DEVICE

Abstract: ic 11105 circuits diagraM transformer type power saver schematic diagram schematic diagram ac voltage regulator CA3162 linear switching voltage regulator handbook IC PWM regulator 5A inductive load 50 watts 3mhz rf amp diode a15a pwm variable frequency drive circuit diagram
Contextual Info: Harris Semiconductor No. AN6915.1 Harris Intelligent Power April 1994 APPLICATION OF THE CA1524 SERIES PULSE-WIDTH MODULATOR ICs Author: Carmine Salerno This application note reviews pulse-width modulated PWM circuits, and the CA1524 series of pulse-width modulator ICs

Stackpole ferrite

Abstract: Siemens Ferrite n27 P6042 1646 IC DATA SHEET TIP73 2N3904 158 transistor 5.0 A Step-Up/Down Inverting Switching Regulator cmos 4190 DIODE Z1 04 833 motorola RC4190N
Contextual Info: Electronics Semiconductor Division RC4190 Micropower Switching Regulator Features • • • • • High efficiency – 85% typical Low quiescent current – 215 µA Adjustable output – 1.3V to 30V High switch current – 200 mA Bandgap reference – 1.31V