TRANSISTOR PT 02 Search Results

Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical

Contextual Info: BIG IDEAS IN PowerTech BIG POWER ’ • HO AM PERES PT- 6 00 PT- 601 PT- 602 SILICON NPN TRANSISTOR FEATURES: v C E s a t 0 .7 5 V V @ 60 A . 1 .5 V @ 6 0 A BE 5 m în @ 1 1 0 A 'F E 2 .5 |i sec I S /b ■ " S /b '

2sk1060

Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Contextual Info: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104

Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

A 3150 igbt driver

Abstract: VS-GT140DA60U 60APH06
Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

photo transistor til 78

Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Contextual Info: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083

Contextual Info: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE y High total power dissipation PT=450mW TO-92 SOT-23 y High hFE and good linearity y Complementary to PJ2N9014 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Pin : 1. Emitter

Contextual Info: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C T O -1 2 6 HIGH POWER DISSIPATION : PT = 1.3W T .= 25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage

2SC16

Contextual Info: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS

2SC2506

Abstract: T6M40F1 2SC250 ok01
Contextual Info: S H I N D E N G E N E L E C T R I C MFG MIE 021=1307 J> 0000002 1 ISHE J • Outline Dimensions gMAX 10 • Ratings Item Absolute Maximum TI V cbo V ceo Base Current Transistor Dissipation Collector to Em itter Sustaining Voltage 12 Icp Ib Ib p Pt V ceo su s

NE46734

Abstract: cm3x sot89 "NPN TRANSISTOR"
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE46734 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT FEATURES LOW NOISE FIGURE UNMATCHED 4: 2.4 dB at 500 MHz 2.3 dB TYP at 200 MHz HIGH S21 GAIN4: 12 dB at 500 MHz 20 dB TYP at 200 MHz HIGH PT LOW COST DESCRIPTION Collector Current, Ic (mA)

avantek

Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
Contextual Info: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz

Q4015T

Abstract: NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT
Contextual Info: TRANSISTOR PART No TYPE Pt @25°C Watts VCEO Volts VEBO Volts VCBO Volts Hfe |ç a lc Amps Volts Hfe PACKAGE DESCRIPTION T 0 18 T 0 18 T 0 18 T 0 18 SGN SGN SGN SGN 0.20 0.50 0.50 0.50 0.05 0.80 0.80 0.80 15 30 30 40 3.0 5.0 5.0 6.0 30 60 60 75 20 25 50 50

transistor et 454

Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
Contextual Info: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I

transistor Cd 18 p

Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
Contextual Info: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V

D1088

Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
Contextual Info: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o

DP2-40E

Abstract: DP2-42E DP2-22 DP2-41E DP2-40N 703065 S2-0200 DP2-20 DP2-20F DP2-62E
Contextual Info: DP2 SERIES High-performance Digital Pressure Sensor Complete functionality! Selection from a wide lineup * Passed the UL 991 Environment Test * UL 61010C-1 compatible, Passed the UL 991 Environment Test based on SEMI S2-0200. [Category applicable for semiconductor manufacturing: TWW2, Process Equipment]

D60T1520

Abstract: D60T152010 D62T D62T1520 D62T152010 Scans-0014004 powerex to-200
Contextual Info: ’POWEREX INC 7294621 POWEREX Tfl INC 98D f ^ W V E flE A DE |? ET 4 b a i DDOEbTl 7 02691 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 D D60T1520 D62T1520 Tentative NPN Power Switching Transistors 200 Amperes 150 Volts Features:

Contextual Info: POUETREX 7294621 m N INC ejß]> ]> POWEREX E H m INC 7 2 ^ 2 1 0002431 3 98 D 02431 E X KEE525B0 Powerex, Inc., Hlllls Street, Yaungwood, Pennsylvania 15697 412 925-7272 In te g r a l B a k e r C la iìip Six-Darlington Transistor Module 8 Amperes/300 Volts

bi 370 transistor e

Abstract: Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 KE92450510 westinghouse power transistor transistor al fm westinghouse ac motor
Contextual Info: 7 2 9 4 6 2 1 P O W E R E X INC ¡bi 7 5 T 4 LiH 1 ODOQTSB Six/Pac Darlington TRANSISTOR „ Modules Dim A B C D E F G H J K L M N O P Q R S T U V w X Y Inches 3.70 3.150+.020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50

SPK1300

Abstract: SPK1150 327B4 SPK1350 Solitron SPK1100 Solitron Transistor Solitron Devices
Contextual Info: 8368602 SOLITRON DEVICES INC _ fib 86D 02439 D E jfl3 b flb D 5 n . -rr 3 3 - □ □ 0 5 4 3 c] I i - !" Now There's A Choice! IS O LA T E D A N D G R U 1 D E D D A R U E M iT O If P O V S E R M O D U L E S Paralleled Up To 10,000 Amps DUAL ISOLATED

Contextual Info: T O SH IB A MP4024 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 024 HIGH PO W ER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE

2N5301

Contextual Info: 836860 2 SOL ITRON DEV ICES INC t.1 3 DE fl3t.flt.02 0001313 t. | ¡¿¡olitron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2N5301 TYPE: NPN E P I BASE CASE: TO-3 • . 40 V Voltage, Collector to Emitter (V cE0 . .