TRANSISTOR PNP EF 250 Search Results

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 ^CEO PA CK A G E PN P T O -66 * Tc = 25°C 4 l ef ^C E m in /m a x @ A /V ^FE@ VcE(sat) @ I c/ I b (V @ A /A ) P * M> W ATTS fj (M H z) ,6@ 1/.125 25 4 3 0 -1 0 0 @ .2 5 /l .6@ 1/.125 25 4 1 3 0 -1 0 0 @ .2 5 /l

Contextual Info: FS8844-DS-17_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.7 Datasheet FS8844 250 mA Low Quiescent Current LDO Linear Regulator FS8844 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: MOTOROLA O rder this docum ent by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.

SM912LV

Abstract: SM912FQD SM2A912 MBCC-306 SM912D SM912F SM91R SMA91EFQD mini spst switch SM2A912D
Contextual Info: VALU-BEAM 912 Series AC- and DC-powered sensors with solid-state outputs Features • Choose models for 10 to 30V dc or 24 to 250V ac operation. • DC models have bipolar solid-state outputs: one NPN sinking and one PNP (sourcing). • AC models have an SPST solid-state output rated for up to 3/4 amp with simple

2PB710AR

Contextual Info: Philips Semiconductors Product specification PNP general purpose transistor 2PB710A FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 50 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

sot-23 Marking LG

Abstract: Transistor pnp ef 250 AEED SOT-23 MARKING 20A
Contextual Info: Central CMPT7090L Semiconductor Corp. SURFACE MOUNT LOWV c e SAT PNP POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT7090L is a Low VCE(SAT) PNP Transistor in a space AEED POWER saving Power SOT-23 surface mount package, IIP? natreneranicmct

Contextual Info: CPH5506 PNP/NPN Epitaxial Planar Silicon Transistor TENTATIVE Application • DC-DC Converters, Relay Drivers ,Lamp Drivers ,Motor Drivers. Features • Composite type with 2 transistors of PNP transistor and NPN transistor, facilitating high-density mounting.

Contextual Info: MOTOROLA Order this document by MJ21193/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2 1 1 9 3 * NPN Silicon Power Transistors MJ2 1 1 9 4 * The M J21193 and M J21194 u tiliz e P e rfo ra te d E m itte r te c h n o lo g y and are specifically designed for high power audio output, disk head positioners and linear

T346

Abstract: 2P transistor
Contextual Info: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification.

bd250

Contextual Info: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD249 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current

Contextual Info: Central CMPT5086 CMPT5087 semiconductor Corp. DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and

transistor 36c

Abstract: tip36 transistor tip36 tip36b
Contextual Info: TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current

BD246C

Abstract: transistor BD245
Contextual Info: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD245 Series • 80 W at 25°C Case Temperature • 10 A Continuous Collector Current

Contextual Info: TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP33 Series • 80 W at 25°C Case Temperature • 10 A Continuous Collector Current

Contextual Info: FS8853-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8853 Fo 300 mA LDO Linear Regulator FS8853 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,

Contextual Info: FS8855-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8855 Fo 500 mA LDO Linear Regulator FS8855 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,

Contextual Info: FS8860-DS-19_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.9 FS8860 Fo 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

2SC2785

Abstract: transistor 2sc2785 2SC2785 transistor TO92S transistor 2sa1175 KF 25 transistor transistor 123
Contextual Info: 2SC2785 TO-92S Transistor NPN 1. EMITTER TO-92S 2. COLLECTOR 123 Features — — — 3. BASE High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

PNP 9012

Abstract: 9012 pnp transistor data sheet transistor 9012 transistor c 9012 9012 pnp Circuit diagram transistor 9012 8-lead plastic so 1N5819 9012 transistor pin diagram 3N80
Contextual Info: SS6652 Micro-Power Inverting DC/DC Controller n n FEATURES DESCRIPTION The SS6652 is a high-performance inverting l 2.4V to 7V input voltage operation. l Adjustable output voltage up to -40V. l Low quiescent current at 80µA. l Pulse frequency modulation maintains high

Contextual Info: FS8853-DS-26_EN OCT 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8853 300 mA LDO Linear Regulator FS8853 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage VCEO:50V z Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) z Complementary to 2SA1175 PNP transistor

Contextual Info: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

2sC2785

Abstract: 2SA1175 TRANSISTOR 2SA1175 2SC2785 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR NPN TO-92S FEATURES z High voltage z Excellent hFE Linearity z Complementary to 2SA1175 PNP transistor 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

FS8860

Contextual Info: FS8860-DS-21_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.1 Datasheet FS8860 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司