BFR93 application note
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFR93 application note
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BFT93
Abstract: BFR93 application note bfr93 MSB003 BFR93A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
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BFT93
R77/02/pp10
BFT93
BFR93 application note
bfr93
MSB003
BFR93A
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SOT23 W1P NXP
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT92
MSB003act
R77/02/pp10
SOT23 W1P NXP
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W1p TRANSISTOR
Abstract: BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF
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BFT92
R77/02/pp10
W1p TRANSISTOR
BFT92
transistor w1P
w1p npn
SOT23 W1P
BFR92 application note
SOT23 W1P NXP
w1p 60
transistor Bft92
W1p 48 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability
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BFG31
OT223
MSB002
OT223.
BFG97.
R77/02/pp9
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bfg97
Abstract: BFG31
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 12 NXP Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES BFG31 PINNING • High output voltage capability
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BFG31
OT223
MSB002
OT223.
BFG97.
R77/02/pp9
bfg97
BFG31
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BSS44
Abstract: No abstract text available
Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.
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BSS44
BSS44
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P008B
Abstract: "PNP Transistor" BSS44
Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.
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BSS44
BSS44
P008B
"PNP Transistor"
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BSS44
Abstract: P008B
Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.
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BSS44
BSS44
P008B
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BSS44
Abstract: No abstract text available
Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.
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BSS44
BSS44
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marking code c1
Abstract: No abstract text available
Text: UTC PUMT1 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION Two independently operating PNP transistors. FEATURES *Low current max.100mA 6 *Low voltage (max.40V) 5 4 *Reduces number of components and board space. * Complement to PUMX1.
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100mA)
OT-363
QW-R218-001
marking code c1
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MBT3946DW
Abstract: No abstract text available
Text: MBT3946DW Dual General Purpose Transistor NPN+PNP Silicon 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 NPN+PNP Maximum Ratings Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP) Collector Current-Continuous
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MBT3946DW
OT-363
SC-88)
MBT3946DW
OT-363
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PBSS4540X
Abstract: PBSS5540X sc6211
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2004 Jan 15 2004 Nov 04 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5540X
SCA76
R75/03/pp13
PBSS4540X
PBSS5540X
sc6211
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PBSS5520X
Abstract: PBSS4520X sc6211
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 23 2004 Nov 08 Philips Semiconductors Product specification 20 V, 5 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5520X
SCA76
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PBSS5520X
PBSS4520X
sc6211
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SBS006
Abstract: CPH3115 CPH5706 ta328
Text: Ordering number : ENN7025 CPH5706 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5706 DC / DC Converter Applications unit : mm 2156 5 4 0.15 3 0.2 [CPH5706] 2.9 0.05 0.6 • Composite type with a PNP transistor and a Schottky
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ENN7025
CPH5706
CPH5706]
CPH5706
CPH3115
SBS006,
SBS006
ta328
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Untitled
Abstract: No abstract text available
Text: BSS44 SILICON PNP TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. INTERNAL SCHEMATIC DIAGRAM
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BSS44
BSS44
P008B
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philips bfq23
Abstract: BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634
Text: Philips Sem iconductors ^ 5 3 ^ 3 1 0 D 3 1 5 13 T7T H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a plastic SOT37 envelope, primarily intended for use in UHF and microwave amplifiers,
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BFQ23
BFR91A.
philips bfq23
BFQ23
BFR91A
the pin function of ic 7423
BFR91A transistor
transistor 9634
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Transistor hFE CLASSIFICATION Marking CE
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA1365 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1365 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING Unit: mm » * +0-5 2-5 -0.3 designed with high collector current, small VcE sai).
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2SA1365
2SA1365
2SC3440.
180MHz
Transistor hFE CLASSIFICATION Marking CE
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Untitled
Abstract: No abstract text available
Text: bb53R31 0 0 3 1 5 2 6 3T0 • APX Philips Semiconductors Product specification PNP 5 GHz wideband transistor — — — — — -— DESCRIPTION BFQ24 ■ N AUER PHILIPS/DISCRETE bRE » PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes
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bb53R31
BFQ24
BFQ22S.
MEA371
MEA365
MEA372
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2SA1366
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1366 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1366 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING n r +0-5 2-5 -0.3
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2SA1366
2SA1366
2SC3441.
-600mA
150MHz
SC-59
O-236
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k 3436 transistor
Abstract: BFQ51 lc 945 transistor 918 TRANSISTOR PNP BFR90A transistor 3746
Text: Philips Semiconductors Product specification T ^ 3 !- /7 PNP 5 GHz wideband transistor PHILIPS BFQ51 INTERNATIONAL DESCRIPTION PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,
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BFQ51
711002b
00454L
BFR90A.
k 3436 transistor
BFQ51
lc 945 transistor
918 TRANSISTOR PNP
BFR90A
transistor 3746
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BFP91A NPN PHILIPS
Abstract: transistor D 1666 BFQ23C BFP91A f 1405 zs 1557 transistor SOT173
Text: Product specification Philips Semiconductors PNP 5 GHz wideband transistor BFQ23C PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • 711Gfl5b 0DMS410 S41 ■ P H I n ] PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X micro-stripline envelopes. It is
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OT173
OT173X
BFQ23C
7110fl5b
0DMS410
OT173.
BFP91A NPN PHILIPS
transistor D 1666
BFQ23C
BFP91A
f 1405 zs
1557 transistor
SOT173
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BFQ24
Abstract: GHz PNP transistor BFQ22S
Text: Product specification Philips Semiconductors PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL / "7 SbE D • 711DflEb 0045417 BFQ24 TTb ■ PHIN PINNING DESCRIPTION PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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BFQ24
711DflEb
DD45417
BFQ22S.
711002b
MEA371
BFQ24
GHz PNP transistor
BFQ22S
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Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
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BFQ254;
BFQ254/I
OT172A1
OT172A3
BFQ254
bbS3T31
MB3693
MEA335
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