TRANSISTOR PNP 3015 Search Results

741 IC

Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10* 2N4931 250 .05

2N5415

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25

Transistor 2N5093

Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >25@2.5/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)

bc307

Abstract: BC309 BC308
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter

2N6109

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6109 DESCRIPTION •DC Current Gain: hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -50V(Min) APPLICATIONS ·Designed for use in general-purpose amplifier and

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol

bc308

Abstract: BC307 BC309
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol

2N610

Abstract: 2N6107 2N6292
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6107 DESCRIPTION •DC Current Gain: hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -70V(Min) ·Complement to Type 2N6292 APPLICATIONS ·Designed for use in general-purpose amplifier and

2N5415

Abstract: FT 5415 transistor 2n 2N5416
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.

2N6107

Contextual Info: SILICON PLASTIC POWER TRANSISTOR PNP 2N6107 7A 40W Technical Data …designed for use in general-purpose switching and amplifier applications. F DC Current Gain - h FE = 30-150 @ IC = 2.0Adc F Collector-Emitter Sustaining Voltage – VCEO sus = 70 Vdc (Min)

2N5415

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.

transistor pnp 3015

Abstract: EC1808TBOP EC1808NPCP EC1808PPCP EC1808NPOP
Contextual Info: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M18, M30, Cable • Thermoplastic polyester housing, cylindrical • Diameter: M18, M30 • Adjustable sensing distance • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN or PNP, make or

transistor 2n

Abstract: 2N5415 2N5416 2N 5415
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.

transistor pnp 3015

Abstract: 3015 nnap EC3015TBOP 3015 TRANSISTOR GEC-30 tbcp
Contextual Info: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M18, M30, Plug • Thermoplastic polyester housing, cylindrical • Diameter: M18, M30 • Sensing distance: 8 and 15 mm • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN/PNP, make and break switching

transistor pnp 3015

Abstract: EC3015TBOP nncp 3015 nnap EC3015NNAP EC3015PNAP EC1808NPOP EC3010NNOP sv relays PPCP
Contextual Info: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M 18, M 30, Cable • Thermoplastic polyester housing, cylindrical • Diameter: M 18, M 30 • Adjustable sensing distance • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN or PNP, make or

transistor pnp 3015

Abstract: transistor 1202 1204 transistor 1202 transistor ei 48 f npn 3010 NPOS EI 33 npn transistors,pnp transistors PPOSS1
Contextual Info: Näherungsschalter Induktiv Rostfreies Stahlgehäuse Typen EI, M 12, M 18, M 30 • Rostfreies Stahlgehäuse, zylindrisch • Durchmesser: M 12, M 18, M 30 • Kurzbauform oder Langbauform • Schaltabstand: 2 - 15 mm • Betriebsspannung: 10 - 40 VDC • Ausgang: NPN/PNP-Transistor, Schliesser und Öffner

406j transistor

Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and

1204 transistor

Abstract: transistor pnp 3015 1202 transistor transistor 1202 Transistor 1204 PPOSS1 transistor b 1202 NPOSS 1805PPOSS NPCSL
Contextual Info: Proximity Sensors Inductive Stainless Steel Housing Types EI, DC, M12, M18, M30 • Stainless steel housing, cylindrical • Diameter: M12, M18, M30 • Short or long versions • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC • Output: Transistor NPN/PNP, make or break switching

PPOPL EI 3015

Abstract: transistor pnp 3015 EI3015PPOPL transistor b 1202 1204 transistor transistor 1202 ppcpl PPOPL1 ei 48 f SEI-1202
Contextual Info: Proximity Sensors Inductive Thermoplastic Polyester Housing Types EI, DC, M12, M18, M30 • Euronorm thermoplastic polyester housing, cylindrical • Diameter: M12, M18, M30. • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN/PNP, make or break switching

1202 transistor

Abstract: transistor 1202 transistor pnp 3015 3015 TRANSISTOR EI1808NPOSS 1805PPOSS EI1202PPOSS EI1808PPOSS PPOSS EI1202NPOSS
Contextual Info: Proximity Sensors Inductive Stainless Steel Housing Types EI, DC, M 12, M 18, M 30 • Stainless steel housing, cylindrical • Diameter: M 12, M 18, M 30 • Short or long versions • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC • Output: Transistor NPN/PNP, make or break switching

2N4927

Abstract: 2N5415
Contextual Info: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib

MH 5450 S

Abstract: BF 212 transistor transistor 2n 5447 293 2n 2n5449 2N5448 2N5447 K 5448
Contextual Info: *2N 5447 *2N 5448 'NP SILICON TRANSISTOR, EPITAXIAL PLANAR RANSISTOR PNP S ILIC IU M . PLAN A R E P IT A X IA L tempi, of 2N 5449 and 2N 5450 4 ! Preferred device Dispositif recommandé Driver stages and power stages in AF amplifiers Etages " D rivers" e t de puissance p o u r

SL 100 NPN Transistor

Abstract: 1202 transistor transistor b 1202 1204 transistor Transistor 1204 1204 PPOSS transistor pnp 3015 Ei Information equivalent of SL 100 NPN Transistor
Contextual Info: Proximity Sensors Inductive Stainless Steel Housing Types EI, DC, M 12, M 18, M 30 • Stainless steel housing, cylindrical • Diameter: M 12, M 18, M 30 • Short or long versions • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC • Output: Transistor NPN/PNP, make or break switching

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4