TRANSISTOR PNP 1A Search Results
TRANSISTOR PNP 1A Datasheets Context Search
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TIP32CL-TN3-R
Abstract: TIP32C-TN3-R TIP32C-TN3-T TIP31C TIP32C TIP32CL
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TIP32C TIP32C TIP31C TIP32CL TIP32C-TN3-R TIP32CL-TN3-R TIP32C-TN3-T TIP32CL-TN3-T O-252 TIP32CL-TN3-R TIP32C-TN3-T TIP31C TIP32CL | |
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Contextual Info: UTC TIP32C PNP EXPITAXIAL PLANAR TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip31C TO-220 |
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TIP32C TIP32C tip31C O-220 -30mA -100V -375mA | |
TIP32CContextual Info: UTC TIP32C PNP EXPITAXIAL PLANAR TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip31C TO-220 |
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TIP32C TIP32C tip31C O-220 QW-R203-009 | |
TIP32C
Abstract: TIP31c PNP Transistor transistor pnp 1a transistor TIP32C
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TIP32C TIP32C tip31C O-220 -30mA -100V -375mA QW-R203-009 TIP31c PNP Transistor transistor pnp 1a transistor TIP32C | |
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Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C |
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TIP32C TIP32C TIP31C TIP32CL-TA3-T TIP32CG-TA3-T TIP32CL-T60-K TIP32CG-T60-K TIP32CL-T6S-K TIP32CG-T6S-K TIP32CL-TN3-R | |
TIP32CG
Abstract: TIP32C Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C
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TIP32C TIP32C TIP31C TIP32CL TIP32CG TIP32C-TA3-T TIP32C-TN3-R TIP32CL-TA3-T TIP32CL-TN3-R TIP32CG-TA3-T TIP32CG Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity. |
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2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017 | |
2SB1260Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. |
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2SB1260 2SB1260 2SB1260L 2SB1260G 2SB1260-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ) |
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2SB1198 2SB1198 A/-50mA) 2SB1198G-x-AE3-R OT-23 QW-R206-040 | |
transistor 1012 TO252Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. |
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2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. |
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2SB1260 2SB1260 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R OT-89 O-252 QW-R208-017 | |
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Contextual Info: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA) |
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2SB1198 2SB1198 A/-50mA) OT-23 QW-R206-040 | |
2SB1198
Abstract: sot akr
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2SB1198 2SB1198 A/-50mA) OT-23 QW-R206-040 sot akr | |
2SB1260Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. |
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2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T | |
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Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89 |
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2SB1260 2SB1260 OT-89 100ms QW-R208-017 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR DESCRIPTION The UTC MP2510 is a PNP transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. |
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MP2510 MP2510 -100V) MP2510L-x-T3P-T MP2510G-x-T3P-T QW-R214-021 | |
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Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89 |
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2SB1260 2SB1260 OT-89 QW-R208-017 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. |
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BD238 BD238 BD238L-T60-K BD238G-T60-K O-126 BD238L-T6S-K BD238G-T6S-K O-126S QW-R226-002 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. |
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BD238 BD238 BD238L-T6S-K BD238G-T6S-K O-126S QW-R226-002, | |
akr sot-23Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 3 DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 SOT-23 FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ) |
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2SB1198 2SB1198 OT-23 A/-50mA) OT-23 2SB1198L-x-AE3-R 2SB1198G-x-AE3-R QW-R206-040 akr sot-23 | |
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Contextual Info: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A |
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ZXTC6720MC ZXTDE4M832 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A) |
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2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC= -1A) |
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2SA1020 2SA1020 2SC2655 2SA1020G-x-AE3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K OT-23 | |
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Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A |
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ZXTPS718MC ZX3CD2S1M832 | |