TRANSISTOR PNP 0.15W Search Results

4733 PNP

Abstract: 80E08 HFA3046 4407 ic data 9544 transistor UHF power TRANSISTOR PNP
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet [ /Title HFA3 046, HFA30 96, HFA31 27, HFA31 28 /Subject (Ultra High Frequency Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, NPN PNP, 8V, 15ma, uhf ghz ft, low October 1998

transistor 102

Contextual Info: Small Signal Transistor BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage

Contextual Info: Small Signal Transistor BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A

2n5333

Abstract: TRANSISTOR pnp 0.15W
Contextual Info: SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 • Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier and high speed Switching Applications • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2n5333

Contextual Info: SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 • Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier and high speed Switching Applications • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N2907 PNP Transistor to 92

Abstract: pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123
Contextual Info: LT1123 Low Dropout Regulator Driver U FEATURES DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,

2224B

Abstract: 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W
Contextual Info: LT1123 Low Dropout Regulator Driver U FEATURES • DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,

Contextual Info: LT1123 Low Dropout Regulator Driver FEATURES DESCRIPTIO U The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,

Contextual Info: r r u _ LT1123 r m TECHNOLOGY Lo w D ro p o u t R e g u la to r D river F€RTUR€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ The LT1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an

transistor k 975

Abstract: transistor nf 37 transistor k 117 GR
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1162 Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.

transistor k 975

Abstract: micro transistor 117
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1162 Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.

Contextual Info: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.

2SA1162GR

Abstract: 2SA1162-G
Contextual Info: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor

2224B

Abstract: 2N2907 PNP Transistor to 92 transistor pnp 30V 2A 1W 1N4148 75V 150mA Diodes 2N2907 PNP Transistor TRANSISTOR pnp 0.15W 2N2907 LT1123 LT1123CZ MJE1123
Contextual Info: LT1123 Low Dropout Regulator Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Extremely Low Dropout Low Cost Fixed 5V Output, Trimmed to ±1% 700µA Quiescent Current 3-Pin TO-92 Package 1mV Line Regulation 5mV Load Regulation Thermal Limit

Contextual Info: / T U lTC A ß EC H N O LO G Y _ m i 23 L o w D ro p o u t R e g u la to r D river FCOTUfteS DCSCftlPTIOn • Extremely Low Dropout ■ Low Cost ■ Fixed 5V Output, Trimmed to ±1 % ■ 700jaA Quiescent Current ■ 3-Pin TO-92 Package ■ 1mV Line Regulation

TRANSISTOR 7812

Abstract: HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B 8660
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 TM Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1

fu 9024

Abstract: LA 7376 LA 4108 ic LA 7841 7338 transistor HFA3046 HFA3046B HFA3096 HFA3127 HFA3127B
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1

234 8715

Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

HFA3046

Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are

Transistor TT 2144

Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SA1162 Features • • • • Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V

2SA1162

Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
Contextual Info: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.

2SA1162

Abstract: 2SA1162G 2SA1162O
Contextual Info: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.