MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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NPN EBC SOT-23
Abstract: SOT-23 EBC NPN transistor ECB TO-92
Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003
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PJP110A
O-220
PJP168A
PJ13003
PJ13005
PJ13007
NPN EBC SOT-23
SOT-23 EBC
NPN transistor ECB TO-92
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • TO-92 SOT-23 Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625 mW ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Symbol Rating Unit Collector-Base Voltage
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PJ2N3904
OT-23
PJ2N3904CT
PJ2N3904CX
OT-23
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Untitled
Abstract: No abstract text available
Text: PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625 mW . TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Pin : 1. Emitter 2. Base 3. Collector Pin : 1. Base
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PJ2N3906
OT-23
PJ2N3906CT
PJ2N3906CX
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PJ1386
Abstract: PJB1386 PJB1386CY
Text: PJB1386 PNP Epitaxial Silicon Transistor T he PJ1386 is an epitaxial planar type PNP silicon transistor SOT-89 TO-252 FATURES z Excellent DC current gain characteristics z Low VCE sat VCE(sat) = -0.35V (Typ) (IC/IB = -4A/-0.1A) Pin: 1.Base ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ )
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PJB1386
PJ1386
O-252
OT-89
O-252
OT-89
PJB1386CY
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW . TO-92 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C ) • Symbol Rating Unit Collector-Base Voltage VCBO 40
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PJ2N3906
OT-23
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Untitled
Abstract: No abstract text available
Text: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in
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bbS3T31
BFG91A
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Untitled
Abstract: No abstract text available
Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO
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PJ2N3904
OT-23
Cut-off70
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2N3553 equivalent
Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz
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MM4019
2N3553
MM4019/2N3553
ATC-200
2N3553 equivalent
vk-200 ferrite choke
vk200* FERROXCUBE
VK-200
VK200
MM4019
ATC200
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2SC3827
Abstract: marking t54 S2LB
Text: SILICON TRANSISTOR 2SC3827 UHF OSILLATOR NPN SILICON EPITAXIAL TRANSISTOR " M IN I M O L D " DESCRIPTION PACKAGE DIMENSIONS The 2SC3827 is an NPN silicon epitaxial transistor intended fo r use as in m illim e ter* UHF oscillator in a tuner o f a TV receiver.
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2SC3827
2SC3827
marking t54
S2LB
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BFR95
Abstract: No abstract text available
Text: PJjjjjP^ejjiconductor^^^^ • bbS3T31 0031flflM ^72 gg^py^Productspecification NPN 3.5 GHz wideband transistor BFR95 N AMER PH ILIP S/ D IS C R ET E DESCRIPTION b*1E D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.
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bbS3T31
0031flflM
BFR95
BFR95
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transistor L6
Abstract: BLY92C BLY92 PL 431 transistor
Text: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
OT-120.
7z68949
transistor L6
BLY92C
BLY92
PL 431 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP1N60E
35itfirf-source
T0220AB
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transistor w7
Abstract: PJ99
Text: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99
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00D3775
05D433Ô
0Q0377b
KftA-14
transistor w7
PJ99
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BLX93A
Abstract: No abstract text available
Text: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe
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7110flEb
BLX93A
711002b
002705b
T-33-07
BLX93A
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xk30
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim eters
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2SD1614
2SD1614
xk30
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UN 2911
Abstract: No abstract text available
Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
UN 2911
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BUK455-100A
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-100A/B
BUK455
-100A
-100B
T0220AB
BUK455-100A
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pj 72 diode
Abstract: pj 67 diode W1872 diode pj 72
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP18N20E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP18N20E
T0220AB
pj 72 diode
pj 67 diode
W1872
diode pj 72
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BUK453-60B data
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-60A/B
BUK453
T0220AB
BUK453-60B data
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK452-60A/B
BUK452
T0220AB
ID/100
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