TRANSISTOR PH22 Search Results

ph2222a

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PH2222A NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES

BP317

Abstract: PH2222A PH2907A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING • High current max. 600 mA

PH2222A

Abstract: PH2907A SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING • High current max. 600 mA

transistor p8

Abstract: f2224 52Z05
Contextual Info: =_ rz an AMP comcww Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz v2.00 so3 Features l l l l l l l _ NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

PH2226-110M

Abstract: VCC36
Contextual Info: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

transistor f 255

Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Contextual Info: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

7z transistor

Abstract: J401 PH2226-50M
Contextual Info: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 22.85 NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

PH2907A

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PH2907A PNP switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Jun 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor PH2907A FEATURES

PH2907A

Abstract: BP317 PH2222A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2907A PNP switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 27 Philips Semiconductors Product specification PNP switching transistor PH2907A FEATURES PINNING • High current max. 600 mA

PH2907A

Abstract: SC-43A PH2222A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2907A PNP switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification PNP switching transistor PH2907A FEATURES PINNING • High current max. 600 mA

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

Contextual Info: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 22 Feb 08 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH2226-110M

Contextual Info: PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 22 Feb 08 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH2226-50M Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

Contextual Info: a n A M P com pany Radar Pulsed Power Transistor, 110W, 100|is Pulse, 10% Duty 2.25 - 2.55 GHz PH2226-110M Features • N PN S ilic o n P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la s s C O p e r a t io n

Contextual Info: jtà c C M W an A M P com pany Radar Pulsed Power Transistor, 50W, 100ns Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M V2.00 Features 8b • NPN S ilic o n P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n

lc 945 p transistor NPN

Abstract: lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A ph2222 65LC ph2222a lc 945 transistor
Contextual Info: Philips Semiconductors Product specification NPN switching transistors PH2222; PH2222A FEATURES PINNING • High current max. 600 mA PIN DESCRIPTION • Low voltage (max. 40 V). 1 2 base APPLICATIONS 3 collector emitter • Switching and linear amplification.

ph2222

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222; PH2222A NPN switching transistors Product specification Supersedes data of 1997 May 20 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN switching transistors

transistor ph22

Abstract: MWS11-PH22-CS h bridge CSP
Contextual Info: MWS11-PH22-CS CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY There are two leadless chip carrier LCC package versions for this Power Amplifier family. One is a 3mm x 3mm chip scale package (CSP) with external input/output match and the other is a

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

OF4455

Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.