TRANSISTOR PH18 Search Results

transistor j5

Abstract: 45W AMP PH1819-45A Wireless power
Contextual Info: Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation

PH1819-45

Abstract: DSAE001132
Contextual Info: PH1819-45 Wireless Bipolar Power Transistor 45W, 1805-1880 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP

Contextual Info: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching

33w NPN

Abstract: Pacific Wireless PH1819-33
Contextual Info: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching

PH1819-15N

Contextual Info: PH1819-15N Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 15 W PEP

PH1819-4N

Abstract: 1850 transistor
Contextual Info: PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 4 W PEP

13MM

Abstract: PH1819-4N v6 4n diode
Contextual Info: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point

181945

Contextual Info: A fik k Coming Attractions M aann A M P c<o m p a n y Wireless Bipolar Power Transistor, 45W 1805-1880 MHz PH1819-45 Features • • • • • NPN Silicon Microwave Power Transistor Com m on Emitter Class AB O peration Internal Input and O utput Im pedance Matching

J5417AKK

Abstract: MALLORY 150 CAPACITORS Rogers 6010.5 ATC100A PH1819-45A transistor 41 j5417
Contextual Info: PH1819-45A M/A-OOM Wireless Power Transistor 45 Watts, 1805- 1880 MHz /MOCOVI M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipo­ lar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805

transistor b 595

Abstract: ATC100A PH1819-45
Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System

1N4Z45

Abstract: T33 transistor
Contextual Info: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g

PH1875L

Contextual Info: PH1875L N-channel TrenchMOS logic level FET Rev. 01 — 29 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

Solutions

Abstract: PH1819-10
Contextual Info: PH1819-10 Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • Designed for cellular base station applications -30 dBc typ. 3rd IMD at 10 W PEP Common emitter configuration

TRANSISTOR 185 846

Abstract: 1N914B PH1819-2
Contextual Info: =-r_= an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 2W PH1819-2 Features Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration

c337 transistor

Abstract: C338 c338 transistor
Contextual Info: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

bipolar transistor ghz s-parameter

Abstract: PH1819-2 083 ICO gp 1291
Contextual Info: PH1819-2 Wireless Bipolar Power Transistor 2W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • Designed for cellular base station applications Class AB: -34 dBc typ. 3rd IMD at 2 W PEP Class A: +43 dBm typ. 3rd order intercept point

b 595 transistor

Abstract: transistor b 595
Contextual Info: m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.78 -1.90 GHz Features • • • • • PH1819-10 SL.Ü :i4 dd'- D esigned for C ellular Base Station A pplications -30 dBc Typ 3 rd IMD at 10 W atts PEP C o m m o n K m itter C onfig u ratio n

Contextual Info: M fc c m m an A M P com pany Wireless Bipolar Power Transistor, 4W 1.78- 1.90 GHz PH1819-4N Features • • • • • • • • /i?b U8 4?> NPN Silicon M icrowave Power T ransistor D esign ed for Linear Am plifier A pplications Class AB: -34 dB c Typ 3rd IMD at 4 Watts PEP

IU 1047

Abstract: transistor 1005 oj
Contextual Info: V M fcC Q M m an A M P com pany Wireless Bipolar Power Transistor, 2W 1 .7 8 -1 .9 0 GHz PH1819-2 744 _ Features • • • • • • bL.D ;i4 Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd 1MD at 2 Watts PKP Class A: +43 dBm Typ 3rd Order Intercept Point

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

PH1819-30

Abstract: PH1819
Contextual Info: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching

LTC 433

Abstract: input 12v 9v output converter diagram LT3845 16ME470WF DN433 flyback converter 3845 16ME47 PH1875L ic lt3845 387K
Contextual Info: A Positive-to-Negative Voltage Converter Can Be Used for Stable Outputs Even with a Widely Varying Input – Design Note 433 Victor Khasiev + – , LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.