TRANSISTOR P8 Search Results

TRANSISTOR P8 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR P8 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
MO178 Abstract: 0118 transistor MO-178BA Text: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT23-8 0.20 (0.008) M CL P8.064 C VIEW C 8 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE e b INCHES SYMBOL 8 6 7 5 CL CL E 1 2 3 E1 MILLIMETERS MAX MIN MAX NOTES A 0.036	Original	PDF	OT23-8) 5M-1994. SC-74 MO178BA. MO178 0118 transistor MO-178BA
transistor marking P8 Abstract: transistor p8 LDTA123YLT1G LDTA123YLT3G Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an	Original	PDF	LDTA123YLT1G OT-23 transistor marking P8 transistor p8 LDTA123YLT1G LDTA123YLT3G
transistor marking P8 Abstract: LDTA123YWT1G Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an	Original	PDF	LDTA123YWT1G transistor marking P8 LDTA123YWT1G
LDTA123YET1G Abstract: transistor marking P8 SC-89 Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA123YET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an	Original	PDF	LDTA123YET1G SC-89 -200m -100m 463C-01 463C-02. LDTA123YET1G transistor marking P8 SC-89
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	PDF	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL
Untitled Abstract: No abstract text available Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P8 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage	Original	PDF	MT4S102T
transistor p89 Abstract: transistor be p89 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT FCX589 FMMT549 DSA003667 Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – FCX589 P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage V CEO -30	Original	PDF	FCX589 -100mA* -200mA* -500mA, -100mA, 100MHz FMMT549 transistor p89 transistor be p89 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT FCX589 DSA003667
Untitled Abstract: No abstract text available Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics	Original	PDF	MT4S102T
transistor p89 Abstract: No abstract text available Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – FCX589 P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage V CEO -30	Original	PDF	FCX589 -100mA* -200mA* -500mA, -100mA, 100MHz FMMT549 transistor p89
transistor 5d Abstract: BC808W 5H MARKING BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W Text: P jjjN p ^ e n jjÇ o n d u c to i« ^ Ç ^ 7 1 1 □ fi 2 b QObf lMOT 3Tfl H P H IN PNP general purpose transistor FEATURES ^^P\|j°duc^P8çfficatlon BC807W; BC808W PIN CONFIGURATION • High current • S-m ini package. DESCRIPTION PNP transistor in a plastic SOT323	OCR Scan	PDF	711002b BC807W; BC808W OT323 OT323 MAM037 BC807W: BC807-16W BC807-25W BC807-40W transistor 5d BC808W 5H MARKING BC807W BC808-16W BC808-25W BC808-40W
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

transistor 81 110 w 63 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •	OCR Scan	PDF	MRF581 transistor 81 110 w 63
T12N50 Abstract: 69 PIC transistor Text: ZETEX ZXT12N50DX SuperS0T4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=50V; Rsat = 45m il; lc= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex m atrix structure com bined w ith advanced assembly techniques to give	OCR Scan	PDF	ZXT12N50DX T12N50 69 PIC transistor
HPA1816 Abstract: HPA1816GR-9JG JUPA1816 PA1816 2002CP Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR juPA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The \|o.PA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and	OCR Scan	PDF	uPA1816 PA1816 HPA1816 HPA1816GR-9JG JUPA1816 2002CP
Untitled Abstract: No abstract text available Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1854 is a switching device which can be driven directly by a 2.5-V power source.	OCR Scan	PDF	uPA1854 D13295EJ1V0DS00 PA1854
d128 Abstract: PA1852 uPA1852 diode oa 90 Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 2 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1852 is a switching device which can be driven directly by a 2.5-V power source.	OCR Scan	PDF	uPA1852 D12803EJ1V0DS00 PA1852 d128 PA1852 diode oa 90
MRF966 Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier	OCR Scan	PDF	MRFG9661/D MRFG9661/9661R MRFG9661/D MRF966 MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Untitled Abstract: No abstract text available Text: um ZXT12P12DX u p e rS O T 4 UAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR UMMARY ceo=-12V; Rsat = 47 m il; lc= -3A ESCRIPTION his new 4th generation ultra low saturation transistor utilises the Zetex atrix structure com bined with advanced assem bly techniques to give	OCR Scan	PDF	ZXT12P12DX ZXT12P
BFG92AW Abstract: transistor marking P8 Text: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR	OCR Scan	PDF	BFG92AW BFG92AW/X; BFG92AW/XR OT343 OT343R BFG92AW/X BFG92AW/XR BFG92AW BFG92AW/X transistor marking P8
D86DL2 Abstract: IRF130 CPD75 Text: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. 14.0 AMPERES	OCR Scan	PDF	IRF130 D86DL2 250MA, Rds10Ni CPD75
Xr 1075 Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320 Text: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic	OCR Scan	PDF	BFG92A; BFG92A/X; BFG92A/XR BFG92 OT143 BFG92A BFG92A/X MSB014 OT143. Xr 1075 BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320

Privacy Settings

TRANSISTOR P8 Search Results

TRANSISTOR P8 Result Highlights (5)

TRANSISTOR P8 Datasheets Context Search

MN1280

oz960

MO178

transistor marking P8

transistor marking P8

LDTA123YET1G

XC6SLX16-CSG324

Untitled

transistor p89

Untitled

transistor p89

transistor 5d

2N2222A 338

y51 h 120c

transistor 81 110 w 63

T12N50

HPA1816

Untitled

d128

MRF966

Untitled

BFG92AW

D86DL2

Xr 1075