TRANSISTOR P4 Search Results

transistor

Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
Contextual Info: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Mitsubishi M54564

Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: preliminary data version 03/03 V23990-P434-F-PM flow PACK 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition

tyco igbt

Abstract: function of igbt nf016 V23990-P430-F-01-14 V23990-P430-F-PM D8552 tyco igbt 1200V flowPACK V23990-P430-F
Contextual Info: V23990-P430-F-PM final datasheet V23990-P430-F-01-14 flowPACK 1, 1200V 50A Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current

wechselrichter

Abstract: TRANSISTOR TC 100 RG 150 diode diode p 600 k
Contextual Info: target datasheet version 09/02 V23990-P439-F flow PACK 1, 1200V Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

MP4503

Contextual Info: TOSHIBA MP4503 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 3 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

DARLINGTON 3A 100V npn array

Abstract: mp45
Contextual Info: TOSHIBA MP4506 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 6 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

MP4506

Contextual Info: TOSHIBA MP4506 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4506 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE 31.5 ± 0.2

BC450

Contextual Info: BC450 PNF SILICON TRANSISTOR « w w w w w w iw iw iw im m w w w w w n n n n n n n n n n n w iw iw iw iw iw w w w w w w w w w w w in n í^ ^ DESCRIPTION P4.68CÛ.18J BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly

MP4508

Contextual Info: TOSHIBA MP4508 TOSHIBA POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4508 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. Package with H eat Sink Isolated to Lead (SIP 12 Pin)

MP4013

Abstract: MP401
Contextual Info: TOSHIBA MP4013 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 0 1 3 HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SWITCHING.

pnp darlington array

Abstract: DARLINGTON TRANSISTOR ARRAY MP4504
Contextual Info: TOSHIBA MP4504 TOSHIBA POWER TRANSISTOR MODULE SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 4 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. Package with Heat Sink Isolated to Lead (SIP 12 Pin)

DIODE 1nu

Abstract: DARLINGTON TRANSISTOR ARRAY diode 1NU 7.1 MP4301 iqa10
Contextual Info: TOSHIBA MP4301 TOSHIBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE DARLINGTON PO W E R TRANSISTOR 4 IN 1 M P4301 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

MP4507

Contextual Info: TOSHIBA MP4507 TOSHIBA POWER TRANSISTOR MODULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 5 0 7 HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm H A M M ER DRIVE, PULSE M OTOR DRIVE AN D INDUCTIVE. LOAD SWITCHING

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

MP4502

Contextual Info: TOSHIBA MP4502 TOSHIBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE DARLINGTON PO W E R TRANSISTOR 4 IN 1 M P4 50 2 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 31.5 ± 0.2

Toshiba mp4501

Abstract: DARLINGTON TRANSISTOR ARRAY MP4501
Contextual Info: TOSHIBA TOSHIBA POWER TRANSISTOR MODULE MP4501 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4501 INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD SWITCHING. Package with Heat Sink Isolated to Lead (SIP 12 Pin)

Contextual Info: SANYO SEMI CON DUCTOR LB 1 2 1 3 M! :?«5«*a5S6%e9 15E i "I" 7TÌ7 D 7 t DUJ.hl.lh = | CORP •'P4 S-2.5’ 10 M onolithic Digital 1C 3035A General-Purpose Transistor Array 1354B The LB1213M is a general-purpose transistor array containing 7 channels.

MP4514

Contextual Info: T O S H IB A MP4514 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P4 514 HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE A N D INDUCTIVE LOAD SWITCHING Package with Heat Sink Isolated to Lead (SIP 12 Pin)

Contextual Info: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance