TRANSISTOR P11 Search Results

2SC3603

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise

NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

2SC2150

Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

PT 4304 a transistor

Abstract: 2SC3587 noise diode
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise

transistor NEC D 586

Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3810 is an NPN silicon epitaxial dual transistor having 5.0 MIN.

2SC4225

Abstract: 9015 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.

2SA1424

Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage

2SC2586

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.

2SC1223

Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.

2SC3603

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and

transistor D 2395

Abstract: NEC 2501 re 443
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.

TO-202 transistor

Abstract: JAPAN transistor TO-202 transistor TRANSISTOR Outlines P03H P03B P03C P03C diode P03j
Contextual Info: Transistor Outline TO-202 3 Lead Molded TO-202 NS Package Number P03A 2000 National Semiconductor Corporation MS101172 www.national.com Transistor Outline (TO-202) May 1999 Transistor Outline (TO-202) 3 Lead Molded TO-202 NS Package Number P03B 3 Lead Molded TO-202

2SC3604

Abstract: pt 240 2SC3810
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters • The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

2SC3603

Abstract: 2SC3809
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

2SC4185

Abstract: nec 2571 nec 2571 4 pin C 4804 transistor 60.0000 oscillator 1900000
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device

transistor NEC b 882

Abstract: transistor NEC b 882 p 2SC4186 NEC 2562 NPN SILICON EPITAXIAL TRANSISTOR
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a TV receiver. The device

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that

nec 2571

Abstract: nec 2571 4 pin 9522 transistor C 4804 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device

k 319

Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
Contextual Info: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar

transistor AL P11

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA114TT PNP resistor-equipped transistor Objective specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Objective specification PNP resistor-equipped transistor