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    TRANSISTOR P 3 Search Results

    TRANSISTOR P 3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P 3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type


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    PDF MMFTP84 MMFTP84 OT-23 O-236) UL94V-0

    TRANSISTOR SMD MARKING CODE QR

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


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    PDF PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11

    CA3273

    Abstract: No abstract text available
    Text: CA-3273 High-Side Driver December 15, 2011 Features Description • Equivalent High Pass P-N-P Transistor The CA3273 is a power IC equivalent of a P-N-P pass transistor operated as a high-side-driver current switch in either the saturated ON or cutoff (OFF) modes. The CA3273


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    PDF CA-3273 CA3273

    transistor marking T2

    Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
    Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base


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    PDF BCV64 BCV64B OT-143 BCV63. DDEU55b transistor marking T2 TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor

    transistor 2n

    Abstract: 3904
    Text: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor


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    PDF 2N3904 15000kHz 500rr transistor 2n 3904

    2N1046

    Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
    Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an


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    PDF 2N1046 DC-11 germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e

    L7E transistor

    Abstract: No abstract text available
    Text: •I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ]> y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA


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    PDF PMBT5401 OT-23 OT-23es L7E transistor

    thyristor firing circuits

    Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A
    Text: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits


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    PDF ca3096 ca3096a CS-23846 16-Liad CA3096> 100/iA, CA3018, CA3018A 120MHz lc-10mA thyristor firing circuits RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A

    bd132

    Abstract: transistor ALG 20
    Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter


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    PDF BD132 OT-32 BD131. bbS3T31 0D34251 BD131 BD132 bb53T31 transistor ALG 20

    Untitled

    Abstract: No abstract text available
    Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 .1 5 0.9Ö~^ ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


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    PDF CMBT5401

    8B123

    Abstract: 2SB1232 2SD1842 1SB12
    Text: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.


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    PDF 2SB1232/2SD1842 2SB1232 2SD1842 00V/40A 8B123 2SB1232 2SD1842 1SB12

    Untitled

    Abstract: No abstract text available
    Text: L CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P -N -P transistor M arking CMBT5401 = 2L PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATIN GS Collector-base voltage open emitter


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    PDF CMBT5401

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


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    PDF BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143

    mcl610

    Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
    Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR


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    PDF MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601

    BFQ42

    Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
    Text: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is


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    PDF 711002b BFQ42 BFQ42 BLW29 7Z77622 7Z77623 7Z77624 w7 transistor transistor w7 IRF 502 TRANSISTOR transistor j18 Si NPN c25a f0pf philips bfq42

    Untitled

    Abstract: No abstract text available
    Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS


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    PDF CMBT5401 23A33T4

    BF926

    Abstract: BF926 philips
    Text: BF926_ — = _ PHILIPS INTERNATIONAL SbE D • T-3M 7 IL- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and


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    PDF 0G421flb BF926_ 0D421 920S2 BF926 BF926 philips

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


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    PDF bbS3T31 BF550 bb53T31 DQ1S71Q T-31-15

    CMBT5401

    Abstract: 2L TRANSISTOR
    Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PACKAGE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 ! 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 o.sr _2 .00_ 1.80 ABSOLUTE MAXIMUM RATINGS


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    PDF CMBT5401 CMBT5401 2L TRANSISTOR

    BF926

    Abstract: BF926 philips PNP UHF transistor transistor BF926
    Text: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and


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    PDF BF926_ 920S2 BF926 BF926 philips PNP UHF transistor transistor BF926

    differential pair cascode

    Abstract: piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array
    Text: D Arrays Transistor-continued Super-Beta Transistor Array Incorporates a Super-Beta Differential Cascode Amplifier Plus 3 Independent n-p-n Transistors CA3095 Applications and Features D ifferen tial Cascode A m p lifie r: T w o super-beta n-p-n transistors —


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    PDF 92CS-20350 CA3095 100/XAdc CA3127 differential pair cascode piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array

    10J2

    Abstract: 3LV2 BLV20 TRANSISTOR 2X5 sot
    Text: •i bb53T31 0025^33 624 H A P X BLV20 b'ìE T> N AMER PH I L I P S /D IS C RE T E V.H.F. POWER TRANSISTOR N -P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nom inal sup p ly voltage of 2 8 V . Th e transistor is resistance stabilized and is guaran­


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    PDF bb53T31 BLV20 OT-123. 7Z68947 7z68946 7Z68948 10J2 3LV2 BLV20 TRANSISTOR 2X5 sot

    Untitled

    Abstract: No abstract text available
    Text: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •


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    PDF BF550

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 0 02S c17b MMfl H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E » SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope primarily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA


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    PDF PXT3906 OT-89 7Z74969