TRANSISTOR P Search Results
TRANSISTOR P Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
2SC6026MFV |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
![]() |
||
TTC5886A |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
![]() |
||
TTA2097 |
![]() |
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
![]() |
||
TPCP8515 |
![]() |
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
![]() |
||
TTC021 |
![]() |
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
![]() |
TRANSISTOR P Price and Stock
onsemi TRANSISTOR-PZTA92T1G/SOT223 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
TRANSISTOR-PZTA92T1G/SOT223 | 3,000 |
|
Get Quote |
TRANSISTOR P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
mcl610
Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
|
OCR Scan |
MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 | |
DUAL TRANSISTORContextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc. |
Original |
OT-363 QW-R218-024 DUAL TRANSISTOR | |
PUMF11Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor |
Original |
MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PUMF11 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network |
Original |
LDTA124EET1 SC-89 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference. |
Original |
OT-26 QW-R218-018 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference. |
Original |
OT-26 QW-R218-020 | |
free IC npn transistorContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are |
Original |
MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 2012ues QW-R218-012 free IC npn transistor | |
n24 transistorContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are |
Original |
MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor | |
transistor sc 308
Abstract: DTA143EE SMD310
|
Original |
DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310 | |
DTC114TE
Abstract: SMD310 motorola DTC114TE
|
Original |
DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE | |
transistor sc 308
Abstract: DTC114TE SMD310
|
Original |
DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 | |
BUX45
Abstract: transistor et 460
|
OCR Scan |
CB-19 BUX45 transistor et 460 | |
DTC114YE
Abstract: SMD310 motorola DTC114YE
|
Original |
DTC114YE/D DTC114YE 416/SC DTC114YE/D* DTC114YE SMD310 motorola DTC114YE | |
2SC3603Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise |
OCR Scan |
2SC3603 2SC3603 | |
|
|||
IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
|
Original |
PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH | |
2SD1581Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is |
Original |
2SD1581 2SD1581 | |
DTA143EE
Abstract: SMD310 43 DTA143EE
|
Original |
DTA143EE/D DTA143EE 416/SC DTA143EE/D* DTA143EE SMD310 43 DTA143EE | |
DTA114YE
Abstract: SMD310
|
Original |
DTA114YE/D DTA114YE 416/SC DTA114YE/D* DTA114YE SMD310 | |
D1615
Abstract: transistor ab2 12
|
Original |
2SD2425 2SD2425 2SB1578 C11531E) D1615 transistor ab2 12 | |
2SD2402
Abstract: transistor 2sD2402 Transistor Marking EY
|
Original |
2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY | |
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for |
Original |
2SD2403 2SD2403 2SB1572 | |
FC155Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one |
Original |
EN5063 FC155 FC155] FC155 | |
MMBT3906 vishayContextual Info: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case |
Original |
MMBT3906 MMBT3904 2N3906. OT-23 MMBT3906-GS18 MMBT3906-GS08 D-74025 19-May-04 MMBT3906 vishay | |
2SB1453
Abstract: NEC 2SB1453
|
Original |
2SB1453 2SB1453 NEC 2SB1453 |