TRANSISTOR NUMBERS Search Results

transistor number code book FREE

Abstract: PNP TRANSISTOR SOT363 PUMF12 10311 marking A1 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product specification 2002 Nov 07 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor

TRANSISTOR 1300

Abstract: k 1 transistor BIPOLAR TRANSISTOR transistor N J "Bipolar Transistor" 2 F transistor 1500R
Contextual Info: 1.1 FET Example 2 SK 890 A. 1st 2nd 3rd 1st group: transistor types are indicated as shown below. 1st group character Type 2 S J P-channel field effect transistor 2 S K N-channel field effect transistor 2nd group: serial numbers starting at 11 3rd group: suffix indicating changes (alphabetical order)

LIMITING INRUSH CURRENT npn

Contextual Info: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

transistor equivalent table

Abstract: PBLS4002D
Contextual Info: PBLS4002D 40 V PNP BISS loadswitch Rev. 01 — 1 December 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package

PBLS4004D

Contextual Info: PBLS4004D 40 V PNP BISS loadswitch Rev. 01 — 9 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package

PBLS4001D

Abstract: 13905
Contextual Info: PBLS4001D 40 V PNP BISS loadswitch Rev. 01 — 30 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package

NSB1706DMW5T1

Abstract: transistor marking code 325
Contextual Info: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

Contextual Info: MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. • Guaranteed Base–Emitter Voltage Matching

CA3146D

Contextual Info: CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. • Guaranteed Base–Emitter Voltage Matching

LM295

Abstract: LM195 LP395 LP395Z Z03A LIMITING INRUSH CURRENT npn
Contextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from almost

a 4x transistor

Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor
Contextual Info: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using

LIMITING INRUSH CURRENT npn

Abstract: LP395 LP395Z LM195 Z03A NPN center base transistors
Contextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

LIMITING INRUSH CURRENT npn

Contextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from

st zo 607

Abstract: 2SC5436 2SC5800 30614
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

BLF872

Abstract: ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP
Contextual Info: BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from

transistor D 2394

Contextual Info: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

H11AA1 45

Abstract: 303-113 H11AA1
Contextual Info: Issued March 1997 232-5648 Data Pack F ac input to transistor output opto-isolator Data Sheet RS stock numbers 303-113, 585-258 The H11AA1 RS stock no 585-258 is an ac input transistor output opto-isolator. The H11AA1 consists of two gallium arsenide infra-red emitting diodes,

58525

Abstract: H11AA1
Contextual Info: Issued November 1995 020-672 Data Pack F ac input to transistor output opto-isolator Data Sheet RS stock numbers 303-113, 585-258 The H11AA1 RS stock no 585-258 is an ac input transistor output opto-isolator. The H11AA1 consists of two gallium arsenide infra-red emitting diodes,

sot-343 as

Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

5962F0721805VXC

Contextual Info: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of

Motorola

Abstract: MBC13900 MOTOROLA TRANSISTOR 318M
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70