TRANSISTOR NPN FOR 12 V Search Results

VHB100-12

Abstract: ASI10719
Contextual Info: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band.

BUV21

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

HF100-12

Abstract: ASI10599
Contextual Info: HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme

MM1505

Contextual Info: MM1505 silicon NPN SILICON SWITCHING TRANSISTOR . designed plications. primarily for high-speed, saturated NPN SILICON SWITCHING TRANSISTOR switching ap­ • High Speed Switching Times @ I q = 10 m Adc — ton < 12 ns (Max) toff < 12 ns (Max) « M A X IM U M R A T IN G S

Contextual Info: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar type 3 elements Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2 –0.1 6.5±0.3

BUV26

Abstract: V50B
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS

CASE 221A Style 1

Abstract: BUV26
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS

NEC 1357

Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz

2SC5015

Abstract: 2SC5015-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation

2SC5786

Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

transistor marking MH

Abstract: transistor buv27 ic marking code pk transistor marking T2 buv27 Specific Device Code MH
Contextual Info: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS

baw 92

Abstract: MPS2369 PP116
Contextual Info: MPS2369 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for use ¡n high-speed, low-current switching applications. • Low O utp ut Capacity • Fast Switching Time @ lc = 10 mAdc t on =! 12 #is (Max) • High Current*Gain—Bandwidth Product

transistor NEC B 617

Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357

20191 ic

Contextual Info: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

2SD1047

Abstract: 2SB817 2SD1047 transistor
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SD1047 2SD1047 transistor is designed for use in general purpose Power amplifier,application FEATURES: * Collector-Emitter Voltage VCEO= 140V Min * DC Current Gain hFE= 60-200@lc= 1.0A * Complement to 2SB817 12 AMPERE

BFT-12

Abstract: Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390
Contextual Info: BFT12 NPN Silicon planar RF transistor BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41 867 sim. T 0 -5 0 for universal application in amplifiers up into the GHz range, e.g. for broadband antenna amplifiers with a high output power and linearity and for

2SC2558

Abstract: 2SC2559 2SC2559K ne0800
Contextual Info: CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES_ DESCRIPTION • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC's NE0800 series of NPN epitaxial UHF power transistors is designed for large volume mobile radio applications In the

NT 407 F TRANSISTOR

Abstract: nt 407 f TRANSISTOR 2FE MPS2714
Contextual Info: M P S 2 7 1 4 SILICON NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . designed for use in low-level switching applications. • Low Output Capacitance C ob = 2.5 p F (Typ) @ V C B = 10 Vd c • Fast Switching Time @ I q * 30 m A d c ts * 12 ns (Typ)

Q62702-C25

Contextual Info: NPN Silicon AF Switching Transistor BCX 12 For general AF applications ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary type: BCX 13 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BCX 12

Contextual Info: Small Signal Transistor Arrays UNA0222 UN222 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12° • Absolute Maximum Ratings Ta = 25°C NPN Overall 6.5±0.3 Symbol Rating Unit Collector-base voltage

fujitsu transistor

Abstract: 2SC2043 ICB01 27mhz transistor citizen mhz 2sc204 tranceiver 27Mhz
Contextual Info: FU JITS U TRANSISTOR :.t£i 2SC2043 is an NPN epitaxial planar type silicon transistor and is designed for use in output stage of 27MHz-citizen band SSB tranceiver application. Ohls transistor has the following outstanding features. * Power Output 12 * Power Gain

NPN planar RF transistor

Contextual Info: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features

BFP181TW

Abstract: marking W18 BFP181TRW BFP181T w18 transistor
Contextual Info: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features