TRANSISTOR NPN FOR 12 V Search Results

TRANSISTOR NPN FOR 12 V Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR NPN FOR 12 V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VHB100-12 Abstract: ASI10719 Text: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band.	Original	VHB100-12 VHB100-12 ASI10719	PDF
BUV21 Abstract: No abstract text available Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A	Original	BUV21 r14525 BUV21/D BUV21	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A	Original	BUV21	PDF
HF100-12 Abstract: ASI10599 Text: HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme	Original	HF100-12 HF100-12 112x45° ASI10599	PDF
Untitled Abstract: No abstract text available Text: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar type 3 elements Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2 –0.1 6.5±0.3	Original	UNA0235	PDF
BUV26 Abstract: V50B Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS	Original	BUV26 85LLC r14525 BUV26/D BUV26 V50B	PDF
CASE 221A Style 1 Abstract: BUV26 Text: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS	Original	BUV26 CASE 221A Style 1	PDF
NEC 1357 Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz	Original	2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN	PDF
2SC5015 Abstract: 2SC5015-T1 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation	Original	2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1	PDF
2SC5786 Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz	Original	2SC5786 S21e2 2SC5786-T1 2SC5786 2SC5786-T1 marking UE marking 654 3pin nec 1299 662	PDF
transistor marking MH Abstract: transistor buv27 ic marking code pk transistor marking T2 buv27 Specific Device Code MH Text: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS	Original	BUV27 O-220AB transistor marking MH transistor buv27 ic marking code pk transistor marking T2 Specific Device Code MH	PDF
transistor NEC B 617 Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357	Original	2SC5336 2SC3357 2SC5336-T1 transistor NEC B 617 nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617	PDF
20191 ic Abstract: No abstract text available Text: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.	Original	1-877-GOLDMOS 1301-PTB 20191 ic	PDF
Q62702-C25 Abstract: No abstract text available Text: NPN Silicon AF Switching Transistor BCX 12 For general AF applications ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary type: BCX 13 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BCX 12	Original	Q62702-C25 Q62702-C25	PDF

NPN planar RF transistor Abstract: No abstract text available Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features	Original	BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 NPN planar RF transistor	PDF
BFP181TW Abstract: marking W18 BFP181TRW BFP181T w18 transistor Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features	Original	BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 marking W18 w18 transistor	PDF
MM1505 Abstract: No abstract text available Text: MM1505 silicon NPN SILICON SWITCHING TRANSISTOR . designed plications. primarily for high-speed, saturated NPN SILICON SWITCHING TRANSISTOR switching ap • High Speed Switching Times @ I q = 10 m Adc — ton < 12 ns (Max) toff < 12 ns (Max) « M A X IM U M R A T IN G S	OCR Scan	MM1505 MM1505	PDF
baw 92 Abstract: MPS2369 PP116 Text: MPS2369 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for use ¡n high-speed, low-current switching applications. • Low O utp ut Capacity • Fast Switching Time @ lc = 10 mAdc t on =! 12 #is (Max) • High Current*Gain—Bandwidth Product	OCR Scan	MPS2369 12/is baw 92 MPS2369 PP116	PDF
NEC IC D 553 C Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409 Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low current consumption and high gain Units : mm i S 2ie 12 = 12 dB T Y P . @ Vce = 2 V, lc = 7 mA, f = 2 G H z	OCR Scan	2SC5180 2SC5180-- 2SC5180-T2 NEC IC D 553 C ic 723 cn NEC JAPAN 3504 transistor on 4409	PDF
2SD1047 Abstract: 2SB817 2SD1047 transistor Text: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SD1047 2SD1047 transistor is designed for use in general purpose Power amplifier,application FEATURES: * Collector-Emitter Voltage VCEO= 140V Min * DC Current Gain hFE= 60-200@lc= 1.0A * Complement to 2SB817 12 AMPERE	OCR Scan	2SD1047 2SB817 2SB817 2SD1047 transistor	PDF
BFT-12 Abstract: Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390 Text: BFT12 NPN Silicon planar RF transistor BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41 867 sim. T 0 -5 0 for universal application in amplifiers up into the GHz range, e.g. for broadband antenna amplifiers with a high output power and linearity and for	OCR Scan	BFT12 T0-50) Q62702-F390 BFT-12 Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390	PDF
2SC2558 Abstract: 2SC2559 2SC2559K ne0800 Text: CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES_ DESCRIPTION • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC's NE0800 series of NPN epitaxial UHF power transistors is designed for large volume mobile radio applications In the	OCR Scan	NE0800-12 NE0800 NE0801 NE0804 NE0810 NE080190 NE080490 NE081090 02-j0 2SC2558 2SC2559 2SC2559K	PDF
NT 407 F TRANSISTOR Abstract: nt 407 f TRANSISTOR 2FE MPS2714 Text: M P S 2 7 1 4 SILICON NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . designed for use in low-level switching applications. • Low Output Capacitance C ob = 2.5 p F (Typ) @ V C B = 10 Vd c • Fast Switching Time @ I q * 30 m A d c ts * 12 ns (Typ)	OCR Scan	MPS2714 NT 407 F TRANSISTOR nt 407 f TRANSISTOR 2FE MPS2714	PDF
fujitsu transistor Abstract: 2SC2043 ICB01 27mhz transistor citizen mhz 2sc204 tranceiver 27Mhz Text: FU JITS U TRANSISTOR :.t£i 2SC2043 is an NPN epitaxial planar type silicon transistor and is designed for use in output stage of 27MHz-citizen band SSB tranceiver application. Ohls transistor has the following outstanding features. * Power Output 12 * Power Gain	OCR Scan	2SC2043 2SC2043 27MHz-citizen 27MHz fujitsu transistor ICB01 27mhz transistor citizen mhz 2sc204 tranceiver 27Mhz	PDF

TRANSISTOR NPN FOR 12 V Search Results

TRANSISTOR NPN FOR 12 V Result Highlights (5)

TRANSISTOR NPN FOR 12 V Datasheets Context Search

VHB100-12

BUV21

Untitled

HF100-12

Untitled

BUV26

CASE 221A Style 1

NEC 1357

2SC5015

2SC5786

transistor marking MH

transistor NEC B 617

20191 ic

Q62702-C25

NPN planar RF transistor

BFP181TW

MM1505

baw 92

NEC IC D 553 C

2SD1047

BFT-12

2SC2558

NT 407 F TRANSISTOR

fujitsu transistor