TRANSISTOR NPN EPITAXIAL SILICON ZS 35 Search Results

TRANSISTOR NPN EPITAXIAL SILICON ZS 35 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR NPN EPITAXIAL SILICON ZS 35 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE478 Abstract: No abstract text available Text: NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating	Original	PDF	NTE478 175MHz NTE478
BFR93A E Abstract: BFR93AR-T3 R5 SOT transistor BFR93A transistor npn Epitaxial Silicon zs 35 300MHZ 800MHZ BFR93A BFR93AR BFR93AR-T1 Text: PLANETA BFR93A/BFR93AR The RF Line NPN Silicon High-Frequency Transistor 1 3 DESCRIPTION The BFR93A/BFR93AR is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.	Original	PDF	BFR93A/BFR93AR BFR93A/BFR93AR BFR93A BFR93AR O-236 SC-59 BFR93A 15max 46max BFR93A E BFR93AR-T3 R5 SOT transistor BFR93A transistor npn Epitaxial Silicon zs 35 300MHZ 800MHZ BFR93AR BFR93AR-T1
BFR91 Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45 Text: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and	Original	PDF	BFR91 BFR91 KT-29 24max TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45
MS1204 Abstract: 136MHz NPN planar RF transistor SD1019 max6535 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1204 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 80W POWER GAIN 9.0dB	Original	PDF	MS1204 136MHz SD1019 MS1204 136MHz NPN planar RF transistor max6535
TRANSISTOR L2 Abstract: transistor bf 194 E C B Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	PDF	BFG325/XR OT143R TRANSISTOR L2 transistor bf 194 E C B
transistor marking codes list Abstract: BFG325W Text: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	PDF	BFG325W/XR OT343R transistor marking codes list BFG325W
transistor l2 Abstract: No abstract text available Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	PDF	BFG310/XR OT143R transistor l2
A7 NPN EPITAXIAL Abstract: Philips FA 145 BFG310W/XR BFG310W Text: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	PDF	BFG310W/XR OT343R A7 NPN EPITAXIAL Philips FA 145 BFG310W/XR BFG310W
Untitled Abstract: No abstract text available Text: i, LJ nc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 2N6077-2N6079, 40851 High-Voltage, High-Power Silicon N-P-N Transistor* For Switching and Linear Applications 2N6077, 2N6078, 2N6079 and	Original	PDF	2N6077-2N6079, 2N6077, 2N6078, 2N6079
chip die npn transistor Abstract: BFG310W/XR Text: CM PA K-4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits	Original	PDF	BFG310W/XR OT343R BFG310W chip die npn transistor BFG310W/XR
transistor D 2588 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.	OCR Scan	PDF	2SC4092 2SC4092 transistor D 2588
6852 d TRANSISTOR Abstract: 2SC3357 Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for PACKAGE DIMENSIONS Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.	OCR Scan	PDF	2SC3357 2SC3357 OT-89) S22e-FREQUENCY 6852 d TRANSISTOR
transistor b 1624 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION T he 2 S C 3 5 4 5 is an NPN silico n ep ita xia l tra n sisto r in te nd ed fo r use as PACKAGE DIMENSIONS Units: mm U H F o scilla to r and m ixer in a tu n e r of a T V receiver.	OCR Scan	PDF	2SC3545 S22e-FREQUENCY transistor b 1624
BSS38 Abstract: IEC134 Text: BSS38 PH IL I P S INTERNATIONAL SbE » 7 1 1 0 Ô 2 L 00 42330 T7fl • PHIN — SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes.	OCR Scan	PDF	BSS38 BSS38 IEC134

SD1410-3 Abstract: transistor 355 SD-1410-3 Scans-0014615 Text: S G S —TH O M SO N OM C D I 7 ^ 2 3 7 G G O D G S S - T _ J j r- j' 3 - 0 ? SOLID S T A T E MICROWAVE SD1410-3 THOMSON-CSF COMPONENTS CORPORATION M o n tg o m e ry v H Ie , P A 1 8 9 3 6 « V ,. 2 1 5 3 6 2 -8 5 0 0 • T W X 5 1 0 -6 6 1 -7 2 9 9 •	OCR Scan	PDF	SD1410-3 SD1410-3 transistor 355 SD-1410-3 Scans-0014615
2n222a Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482 Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.	OCR Scan	PDF	ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222a ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132
TRANSISTOR SD1444 Abstract: AJ10 SD1444 Text: H/IS c a n n i-.,inr»S IV U C rO S e m l P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive •■ IVS I I LVj VJ ■ ■ IV* I J V I I IV> ; IPA n I V ■«/ Montgomeryville, 18936-1013 Tel: 215 631-9840 ^ _ . jm jm jm o U l 4 4 4 RF & MICROWAVE TRANSISTORS	OCR Scan	PDF	oU1444 450-512MHz 470MHz SD1444 M8SD144Ã SD1444 1000pf 3M-K6098. TRANSISTOR SD1444 AJ10
transistor power rating 5w Abstract: SD1421 Thomson-CSF Text: 04C D I S G S-THOMSON 7^5=123? OGGQGt.5 2 \| D 7 SOLID STATE MICROWAVE! SD1421 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvilfe, PA 18936.» 1215 362-8500 • TWX 510-661-72.99 c. 800 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1421 is an NPN Silicon Epitaxial Planar Transistor that was	OCR Scan	PDF	SD1421 SD1421 E5851 transistor power rating 5w Thomson-CSF
blw95 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a	OCR Scan	PDF	bbS3T31 0DS1S14 blw95
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bTE » bbS3^31 0D276S3 fl44 BSS38 APX SILICO N PLANAR EPITAXIAL T RA N SIST O R N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes. Q U IC K R E F E R E N C E D A T A	OCR Scan	PDF	0D276S3 BSS38
SD1088 Abstract: vk200 RFC vk200 rfc with 6 turns zd470 rfc vk200 Text: s G S - T H O M S O N OMC 0 \| 7^ 53? aGOOGEl 4 \| ° T -ìì-t* UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1088 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes tuned Q technology which consists of a matching network at	OCR Scan	PDF	SD1088 VK200 vk200 RFC vk200 rfc with 6 turns zd470 rfc vk200
ferroxcube wideband hf choke Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance	OCR Scan	PDF	BLW50F OT123 BLW50F ferroxcube wideband hf choke transistor 4312 PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier
118-136-MHz Abstract: 118-136 mhz Text: □ MC D I S G S-THOMSON □ D G 010G 7^237 7^33 ~ ° 7 Ü IE?;' *5 '•-’I ' •-> ' \ f :lÿjgj%bmeÿvjiÿB, P/yjB936^^^ VHF COMMUNICATIONS TRANSISTOR DESCRIPTION 230 The SD1013-3 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 volt AM class C rf amplifiers functional in the	OCR Scan	PDF	P/yjB936^ SD1013-3 118-136-MHz 118-136 mhz
transistor j304 Abstract: thomson microwave transistor Text: S G S— THOMSON OSC D \| 7 = ^ 2 3 ? OüGQlt.0 7 \| ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION	OCR Scan	PDF	SD1012-3 SD1012-3 18awg. /07-3B transistor j304 thomson microwave transistor

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TRANSISTOR NPN EPITAXIAL SILICON ZS 35 Search Results

TRANSISTOR NPN EPITAXIAL SILICON ZS 35 Result Highlights (5)

TRANSISTOR NPN EPITAXIAL SILICON ZS 35 Datasheets Context Search

NTE478

BFR93A E

BFR91

MS1204

TRANSISTOR L2

transistor marking codes list

transistor l2

A7 NPN EPITAXIAL

Untitled

chip die npn transistor

transistor D 2588

6852 d TRANSISTOR

transistor b 1624

BSS38

SD1410-3

2n222a

TRANSISTOR SD1444

transistor power rating 5w

blw95

Untitled

SD1088

ferroxcube wideband hf choke

118-136-MHz

transistor j304