TRANSISTOR NOISE FIGURE MEASUREMENTS Search Results

transistor D 2394

Contextual Info: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT

AT-41435G

Abstract: at41435 AT41435G transistor 2499
Contextual Info: Agilent AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz Description Agilent’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high

Avantek amplifier

Abstract: Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1
Contextual Info: AVANTEK APPLICATION NOTES A Snbddiary at HewUtt-Packard AM PLIFIERS If excessive power is applied to a transistor amplifier, the first measureable affect is almost always an increase in noise figure. A somewhat higher power will further degrade noise figure and decrease the gain of the amplifier. If the input power

IC 8088

Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
Contextual Info: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well

agilent at41486

Abstract: AT-41486-TR1G AT-41486 nfO32 AT41486-TR1
Contextual Info: Agilent AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz Agilent’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The

free transistor

Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Contextual Info: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package

ATF-13336

Contextual Info: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise

8724e

Abstract: ATF-13336-TR1 ATF13336-STR gaas fet micro-X Package ATF-13336 ATF-13336-STR P1 260 ATF
Contextual Info: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise

ATF-13736

Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

transistor L44

Abstract: L44 TRANSISTOR MA4T645
Contextual Info: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified

8724e

Abstract: P 55 NFO ATF-13336 ATF-13336-STR ATF-13336-TR1 gaas fet micro-X Package
Contextual Info: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise

ATF-13736

Abstract: ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

BFP620 applications note

Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
Contextual Info: Applications Note No. 060 Silicon Discretes A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor • Gain = 14.7 dB • Very Low Noise Figure = 1.05 dB • High Input 3rd-Order Intercept Point = +10 dBm

uln 2008

Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
Contextual Info: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

gaas fet micro-X Package

Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a

transistor L44

Abstract: MA4T64535
Contextual Info: Afa Preliminary Specification an A M P c o m p a n y High Reliability Semiconductor Silicon Bipolar Low Noise Transistor ML4T645-S-512 V1.00 ODS 512 Outline Features • • • • fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation

uln 2008

Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
Contextual Info: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

SOT-143 MARKING 550

Abstract: AT41411 AT-41411 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor
Contextual Info: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth

transistor C4

Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
Contextual Info: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;

740F-080930

Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
Contextual Info: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications

Contextual Info: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth

gaas fet micro-X Package

Abstract: P 55 NFO amplifier TRANSISTOR 12 GHZ GHZ micro-X Package MICRO-X ATF-10236 ATF-10236-STR ATF-10236-TR1
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features Description • Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its

AT-41410

Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth