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    TRANSISTOR NO K3302 Search Results

    TRANSISTOR NO K3302 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    Catalog Datasheet Type Document Tags PDF

    K3302

    Abstract: transistor no k3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 K3302 transistor no k3302 PDF

    transistor no k3302

    Abstract: k3302 2SK3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 transistor no k3302 k3302 2SK3302 PDF

    K3302

    Abstract: transistor no k3302 2SK3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 K3302 transistor no k3302 2SK3302 PDF

    transistor no k3302

    Abstract: No abstract text available
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 transistor no k3302 PDF

    K3302

    Abstract: transistor no k3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 K3302 transistor no k3302 PDF

    k3302

    Abstract: transistor no k3302 2SK3302 K330-2
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.4 S (typ.) ·


    Original     		2SK3302 k3302 transistor no k3302 2SK3302 K330-2 PDF

    transistor no k3302

    Abstract: 2SK3302 K3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3302 transistor no k3302 2SK3302 K3302 PDF