MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Text: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
color sensitive PHOTO TRANSISTOR
Rise time of photo transistor
npn photo transistor
3mm photo transistor
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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Untitled
Abstract: No abstract text available
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays
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M63816P/FP/KP
300mA
M63816P/FP/KP
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18P4G
Abstract: 20P2N-A M63817FP M63817KP M63817P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays
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M63817P/FP/KP
300mA
M63817P/FP/KP
18P4G
20P2N-A
M63817FP
M63817KP
M63817P
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18P4G
Abstract: 20P2N-A M63815FP M63815KP M63815P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays
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M63815P/FP/KP
300mA
M63815P/FP/KP
18P4G
20P2N-A
M63815FP
M63815KP
M63815P
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M63816FP
Abstract: 18P4G 20P2N-A M63816KP M63816P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays
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M63816P/FP/KP
300mA
M63816P/FP/KP
M63816FP
18P4G
20P2N-A
M63816KP
M63816P
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KP
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M63814FP
Abstract: M63814GP M63814KP M63814P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63814P/FP/GP/KP
300mA
M63814P/FP/GP/KP
M63814FP
M63814GP
M63814KP
M63814P
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2SC3355
Abstract: transistor 2sc3355 and application PA33 marking PA33
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS
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2SC3355
2SC3355
transistor 2sc3355 and application
PA33
marking PA33
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2SC3356
Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC3356
2SC3356
IC nec 555
transistor 1431 T
marking 544 low noise amplifier
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2SC2945
Abstract: QK SOT89 2SC2954 mark qk sot
Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF
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2SC2954
2SC2954
2SC2945
QK SOT89
mark qk sot
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GP 015 DIODE
Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KP
GP 015 DIODE
GP 005 DIODE
GP 250 DIODE
M63813FP
M63813GP
M63813KP
M63813P
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NEC NF 932
Abstract: 2SC4092
Text: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.
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2SC4092
2SC4092
S21e2
NEC NF 932
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TRANSISTOR tip122
Abstract: PT 10000 ic 006 TIP122
Text: UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER
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TIP122
TIP122
O-220
QW-R203-006
250IB
TRANSISTOR tip122
PT 10000
ic 006
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PT10M
Abstract: PT 10000
Text: UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER
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TIP127
TIP127
O-220
QW-R203-005
PT10M
PT 10000
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transistor PT 02
Abstract: TIP127 PT 10000
Text: UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER
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TIP127
TIP127
O-220
QW-R203-005
250IB
transistor PT 02
PT 10000
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2SC4092
Abstract: of IC 4013 n NEC NF 932 marking R4
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.
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2SC4092
2SC4092
S21e2
of IC 4013 n
NEC NF 932
marking R4
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Untitled
Abstract: No abstract text available
Text: UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C
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TIP127
TIP127
O-126
QW-R204-017
250IB
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Untitled
Abstract: No abstract text available
Text: UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C
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TIP122
TIP122
O-126
QW-R204-016
250IB
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tip122 transistor
Abstract: OF TRANSISTOR tip122 PT 10000
Text: UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C
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TIP122
TIP122
O-126
QW-R204-016
tip122 transistor
OF TRANSISTOR tip122
PT 10000
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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OCR Scan
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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waitrony
Abstract: WPDT-270 photo darlington sensor
Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-270
WPDT-270
PDT-270
waitrony
photo darlington sensor
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MPS2222 NPN
Abstract: MPS2222 PN2222
Text: SAM S U NG INC LHE 0 SEMICONOUCTOR I TTtmMS 000730b. 4 | f t Z<r~X NPN EPITAXIAL SILICON TRANSISTOR MPS2222 GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vc*o=30V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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00Q73Db
MPS2222
625mW
10/iA,
MPS2222
T-29-21
MPS2222 NPN
PN2222
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