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    TRANSISTOR NF 47 Search Results

    TRANSISTOR NF 47 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NF 47 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor nec 8772

    Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
    Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:


    Original     		NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor PDF

    transistor nec 8772

    Abstract: nec 8772 transistor BR 8772 MJE 15004 transistor transistor BR 8772 NESG2031M05 MJE 4302 NESG2031M05-T1 NESG2031M05-T1-A S21E
    Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:


    Original     		NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 nec 8772 transistor BR 8772 MJE 15004 transistor transistor BR 8772 MJE 4302 NESG2031M05-T1 NESG2031M05-T1-A S21E PDF

    TRANSISTOR C 4460

    Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
    Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


    Original     		AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 OT-23, TRANSISTOR C 4460 AT-41533 544 code marking amplifier zo 103 ma AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E PDF

    AT-41511

    Abstract: AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E AT415
    Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


    Original     		AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E AT415 PDF

    nf 820

    Abstract: AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E
    Text: General Purpose, Low Noise NPN␣ Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


    Original     		AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, nf 820 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E PDF

    transistor 3506 nec

    Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter
    Text: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter PDF

    nec 13772

    Abstract: 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715
    Text: DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5182 2SC5182-T1 SC-59 nec 13772 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715 PDF

    ZO 607 transistor

    Abstract: transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5186 ZO 607 transistor transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1 PDF

    transistor zo 607

    Abstract: 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386
    Text: DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5184 2SC5184-T2 transistor zo 607 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386 PDF

    NEC 2933

    Abstract: 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722
    Text: DATA SHEET SILICON TRANSISTOR 2SC5183R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5183R NEC 2933 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722 PDF

    2SC5437

    Abstract: 8193
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA829TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA829TD 2SC5437) 2SC5437 PA829TD-T3 2SC5437 8193 PDF

    nec 2035 744

    Abstract: MARKING W1 2SC5618 2SC5618-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		2SC5618 2SC5618-T3 nec 2035 744 MARKING W1 2SC5618 2SC5618-T3 PDF

    nec 2035 744

    Abstract: 2SC5618 2SC5618-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		2SC5618 2SC5618-T3 nec 2035 744 2SC5618 2SC5618-T3 PDF

    IC 431

    Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
    Text: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		2SC5277A ENA1075 S21e2 A1075-6/6 IC 431 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22 PDF

    2SC5437

    Abstract: 3-pin IC 7806 k 871
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA829TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA829TC 2SC5437) 2SC5437 PA829TC-T1 2SC5437 3-pin IC 7806 k 871 PDF

    TRANSISTOR C 5387

    Abstract: nec 2035 744 9012 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package


    Original     		2SC5618 2SC5618 2SC5618-T3 TRANSISTOR C 5387 nec 2035 744 9012 transistor PDF

    nec 2501 Le 629

    Abstract: 3771 nec nec d 1590
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		2SC5186 2SC5186 2SC5186-T1 nec 2501 Le 629 3771 nec nec d 1590 PDF

    NF 831

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		2SC5186 2SC5186-T1 NF 831 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1.3 dB ty p . @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB ty p


    OCR Scan     		2SC5185 2SC5185-T1 2SC5185-T2 PDF

    SG 2368

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB typ.


    OCR Scan     		2SC5183 SC-61 2SC5183-T1 2SC5183-T2 SG 2368 PDF

    ic CD 4047

    Abstract: NEC D 809 F transistor NEC D 586 2SC5185 2SC5185-T1 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1 .3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		2SC5185 2SC5185-T1 2SC5185-T2 ic CD 4047 NEC D 809 F transistor NEC D 586 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662 PDF

    fe 5571

    Abstract: KS 0302
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB


    OCR Scan     		2SC5183 SC-61 2SG5183-T1 2SC5183-T2 fe 5571 KS 0302 PDF

    nec 13772

    Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p


    OCR Scan     		2SC5182 SC-59 2SC5182-T1 2SC5182-T2 nec 13772 transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm PDF

    AT41511-BLK

    Abstract: AT-41533-BLK
    Text: f » HEW LETT f t "KM PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, AT-41533 Features D escription • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511:1 dB NF, 15.5 dB G. AT-41533:1 dB NF,


    OCR Scan     		AT-41511, AT-41533 AT-41511 AT-41533 OT-23 OT-143 OT-23, AT41511-BLK AT-41533-BLK PDF