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    TRANSISTOR MSD H2A Search Results

    TRANSISTOR MSD H2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    transistor msd h2a

    Abstract: Scans-031 BwD tran ScansU9X21 B27010 nec D 8243 C
    Text: S T 9 0 0 - S e r ie s EXCITER & POWER AMPLIFIER Part 5.3 f TECHNICAL HANDBOOK Manual B27000 1100 53 SEPTEMBER 1985 Standard Radio & Telefon AB TTT il m 900/5.3 Table of Contents 1. General 1 2. E x c ite r PC B 2.1 Interconnections 2.2 Emission Control 2.3


    OCR Scan     		B27000 transistor msd h2a Scans-031 BwD tran ScansU9X21 B27010 nec D 8243 C PDF