MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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mpsa13l
Abstract: mpsa13 MPSA13G
Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Order Number Package Lead Free
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MPSA13
MPSA13
MPSA13L-AB3-R
MPSA13G-AB3-R
OT-89
MPSA13L-T92-B
MPSA13G-T92-B
MPSA13L-T92-K
MPSA13G-T92-K
MPSA13L-T92-A-B
mpsa13l
MPSA13G
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MPSA13L
Abstract: utc mpsa13
Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Order Number Normal Lead Free
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MPSA13
MPSA13
OT-89
MPSA13-AB3-R
MPSA13L-AB3-R
MPSA13G-AB3-R
MPSA13-T92-B
MPSA13L-T92-B
MPSA13G-T92-B
MPSA13-T92-K
MPSA13L
utc mpsa13
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MPSA13L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Order Number Package Lead Free
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MPSA13
MPSA13
MPSA13L-AB3-R
MPSA13G-AB3-R
OT-89
MPSA13L-T92-B
MPSA13G-T92-B
MPSA13L-T92-K
MPSA13G-T92-K
QW-R208-001
MPSA13L
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MPSA13L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Order Number Package Lead Free
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MPSA13
MPSA13
MPSA13L-AB3-R
MPSA13G-AB3-R
OT-89
MPSA13L-T92-B
MPSA13G-T92-B
MPSA13L-T92-K
MPSA13G-T92-K
MPSA13L-T92-A-B
MPSA13L
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MPSA13
Abstract: PT 10000
Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA13
QW-R201-016
PT 10000
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MPSA13
Abstract: utc mpsa13
Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA13
OT-89
QW-R208-001
utc mpsa13
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MPSA13
Abstract: vbe 10v, vce 5v NPN Transistor utc mpsa13
Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA13
OT-89
100ms
QW-R208-001
vbe 10v, vce 5v NPN Transistor
utc mpsa13
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Darlington transistor
Abstract: MPSA13 transistor 625
Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA13
100ms
QW-R201-016
Darlington transistor
transistor 625
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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MPSA13
Abstract: MPS-A13 MPSA14
Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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MPSA13
100mA
100Adc
100mA,
100MHz
MPS-A13
MPSA14
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MPSA13
Abstract: MPS-A13 MPSA14
Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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MPSA13
100mA
100Adc
100mA,
100MHz
MPS-A13
MPSA14
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MPSA13
Abstract: MPSA14 MPS-A13
Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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MPSA13
100mA
100Adc
100mA,
100MHz
MPSA14
MPS-A13
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TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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Darlington Transistor
Abstract: MPSA13 MPSA14
Text: SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. C A B N E K G J D RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V
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MPSA13/14
100mA,
MPSA13
MPSA14
100MHz,
Darlington Transistor
MPSA13
MPSA14
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MPSA13
Abstract: MPSA14
Text: MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 0.625 PCM: 3 W Tamb=25℃ 1 2 3 Collector current ICM: 0.5 A Collector-base voltage
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MPSA13
270TYP
050TYP
01-Jun-2002
MPSA14
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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MPS A13 transistor
Abstract: MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14
Text: MPSA13/14 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CES 30 V
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A13/14
1000IB
MPS A13 transistor
MPS A13
MPS-A13
MPS-A13-14
MPSA13
MPSA14
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Untitled
Abstract: No abstract text available
Text: P e> MPSA13 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR Package: TO-92 * Collector-Emitter Voltage Vces=30V * Collector Dissipation Pc max =625 mW (Ta=25°C) ABSOLUTE MAXIMUM RATINGS at Tanrt-25*C
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MPSA13
Tanrt-25
300uS
100mA
100mA
100MHZ
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transistor A62
Abstract: MPSA63 MPSA62 MPS-A63 MPSA64 Transistor MPSA63
Text: SEMICONDUCTOR TECHNICAL DATA MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. FEATURES • Complementary to MPSA13/14. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT -20 C o lle c to r-B a se MPSA62
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MPSA62/63/64
MPSA13/14.
MPSA62
MPSA63/64
A62/63/64
transistor A62
MPSA63
MPS-A63
MPSA64
Transistor MPSA63
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D Hi 7=1134142 GOOIOSfl T ElSMGK NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA13 DARLINGTON TRANSISTOR • Collector-Em itter Voltage: V Ce s = 30V • C ollector Dissipation: P 0 max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA13
625mW
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA13 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEs=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Unit 30 30 10 500 625 150 -5 5 -1 5 0 V V V
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MPSA13
625mW
100mA,
100MHz
300/vs,
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