MP25 transistor
Abstract: 2SK2723 2SK1794 2SK2941 2SK2135 transistor 2sj449 MP45F 2SJ329 2SK1760 2SK3055
Text: Road map Transistor Package Power MOS FET Package – RDS(on) MAP Package Type RDS(on)MAX (Ω) VGS = 10 V TO-251/252 (MP-3) TO-126 (MP-5) MP-10 up to 34 m — — up to 140 m — TO-220AB/263 (MP-25) Isolated TO-220 (MP-45F) TO-3P (MP-88) up to 400 m —
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O-251/252
O-126
MP-10
O-220AB/263
MP-25)
O-220
MP-45F)
MP-88)
X13769XJ2V0CD00
MP25 transistor
2SK2723
2SK1794
2SK2941
2SK2135
transistor 2sj449
MP45F
2SJ329
2SK1760
2SK3055
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2SK3365
Abstract: 2SK3365-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 MP-3 2SK3365-Z TO-252 (MP-3Z) designed for DC/DC converters application of notebook
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2SK3365
2SK3365
O-251
2SK3365-Z
O-252
2SK3365-Z
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 MP-3 2SK3365-Z TO-252 (MP-3Z) designed for DC/DC converters application of notebook
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2SK3365
2SK3365
2SK3365-Z
O-251
O-252
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NP22N055SLE
Abstract: d1750 FIGURE17 A1523
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055SLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION NP22N055SLE is N-channel MOS Field Effect PART NUMBER PACKAGE NP22N055SLE TO-252 MP-3ZK Transistor designed for high current switching applications.
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NP22N055SLE
NP22N055SLE
O-252
O-252)
d1750
FIGURE17
A1523
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
O-252
O-252)
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MP-25ZP
Abstract: NP90N04PUF V1435
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching PART NUMBER PACKAGE NP90N04PUF TO-263 MP-25ZP
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NP90N04PUF
NP90N04PUF
O-263
MP-25ZP)
O-263)
MP-25ZP
V1435
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d1740
Abstract: NP55N04SUG
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
O-252
O-252)
d1740
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NP34N055SLE
Abstract: A1737
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055SLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP34N055SLE is N-channel MOS Field Effect PART NUMBER PACKAGE NP34N055SLE TO-252 MP-3ZK Transistor designed for high current switching applications.
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NP34N055SLE
NP34N055SLE
O-252
O-252)
A1737
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d16861
Abstract: NP60N04KUG D1686
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP60N04KUG TO-263 MP-25ZK
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NP60N04KUG
NP60N04KUG
O-263
MP-25ZK)
O-263)
d16861
D1686
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NP82N04PUG
Abstract: NP82N04PUG1-E1B-AY nec 41-A MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP82N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP82N04PUG TO-263 MP-25ZP
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NP82N04PUG
NP82N04PUG
O-263
MP-25ZP)
O-263)
NP82N04PUG1-E1B-AY
nec 41-A
MP-25ZP
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2SK3813
Abstract: 2SK3813-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3813 TO-251 MP-3
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2SK3813
2SK3813
O-251
2SK3813-Z
O-252
O-251)
2SK3813-Z
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NP88N03KDG
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KDG TO-263 MP-25ZK
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NP88N03KDG
NP88N03KDG
O-263
MP-25ZK)
O-263)
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2SK3813-Z
Abstract: 2SK38 2SK3813 d1673
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3813 TO-251 MP-3
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2SK3813
2SK3813
O-251
2SK3813-Z
O-252
O-251)
2SK3813-Z
2SK38
d1673
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D1717
Abstract: 2SK3902 2SK3902-ZK
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3902 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3902-ZK TO-263 MP-25ZK
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2SK3902
2SK3902
2SK3902-ZK
O-263
MP-25ZK)
O-263)
D1717
2SK3902-ZK
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2SK3430-ZK
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430-ZK SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3430-ZK is N-channel MOS Field Effect PART NUMBER PACKAGE 2SK3430-ZK TO-263 MP-25ZK Transistor designed for high current switching applications.
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2SK3430-ZK
O-263
MP-25ZK)
O-263)
2SK3430-ZK
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Untitled
Abstract: No abstract text available
Text: VRF3933 VRF3933 MP 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF3933
VRF3933
150MHz
30MHz,
SD3933
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mp 1008
Abstract: SC33 629-633 Ahuja amplifier
Text: Copyright 1999 IEEE. Reprinted from: O. Khouri, R. Micheloni and G. Torelli, "Very fast recovery word-line voltage regulator for multilevel nonvolatile memories", Proc. Third IMACS/IEEE International Multiconference on Circuits, Systems, Communications and Computers CSCC , Athens (Greece), June 1999, pp. 3781-3784.
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t1976,
SC-32,
SC-18,
mp 1008
SC33
629-633
Ahuja amplifier
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transistor p98
Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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CGH40025F
APPNOTE-006
transistor p98
P99 transistor
transistor nc p79
p88 transistor
Gan hemt transistor
100 p38 transistor
transistor be p88
p115
WR35
1/SMD bm p57
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Untitled
Abstract: No abstract text available
Text: NEC / EtfCTRON DEVICE SILICO N TR A N SISTO R / _ / 2SD992-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD992-Z is designed fo r Audio Frequency A m plifier and Switching, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS •
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2SD992-Z
2SD992-Z
2SB962-Z
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DIP44-pin
Abstract: ha1681
Text: HA16816NT/MP SLIC IC for Key Telephone Applications Features • Basic Functions: Internal battery feed control B , loop super vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor • Ring trip detection
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HA16816NT/MP
DIP44-pin
ha1681
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UC3425
Abstract: transistor k 2723 IC 541 BSX49 IEC134
Text: PHILIPS IN TE RNATIONAL Data sheet status Preliminary specification date of issue August 1990 SbE D m 711002b 0G42mfi übO MP H I N BSX49 t 2 7 -2 3 - Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO VCEO lc Ptot Tj hFE PARAMETER collector-base voltage
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711002b
BSX49
7Z69420
UC3425
transistor k 2723
IC 541
IEC134
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ m C MP N T S blE D • 44475Û4 0 D D cl 7 b ö D2T AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip HEW LETT PACKARD Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz
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AT-00500
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MP transistor
Abstract: 2sd863 transistor 2sc4488 2SC4614 2sc4612
Text: 8A H Y O NMP New MP Transistor Series F e a t u i rr ee ss * Smal1-sized package containing the same chip that has been so far placed in the MP.TO-126 packages. * Small-sized making itu pu possible to make T uuiai X o i ¿/U U package u iai\ i 115 1 j j 1 u 1 1.
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O-126
2SA1701
2SC4481
2SA1702*
2SC4482
2SA1703
2SC4483
2SA1704*
2SC4484*
2SA1705*
MP transistor
2sd863
transistor 2sc4488
2SC4614
2sc4612
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TRANSISTOR si 6822
Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Text: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to
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uPA2981
uPA2982
TRANSISTOR si 6822
SI 6822
PA2981C
transistor 6822 si
TRANSISTOR 6822
si 6822 transistor
6822 TRANSISTOR
TRANSISTOR NPN 6822
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