transistor bd4202
Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F* Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
|
Original
|
BUL45
BUL45F*
BUL45F,
E69369
RATING32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
transistor bd4202
motorola AN485
transistor tip120
motorola MJ480
MJE802 MOTOROLA
TRANSISTOR REPLACEMENT GUIDE
2SC495 transistor
MJE1100 MOTOROLA
BUX98A
MJE170 motorola
|
PDF
|
transistor mj 1503 motorola
Abstract: mosfet transistor 400 volts.100 amperes AN569 MTE53N50E CISS 3010
Text: MOTOROLA Order this document by MTE53N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE53N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 53 AMPERES
|
Original
|
MTE53N50E/D
MTE53N50E
MTE53N50E/D*
transistor mj 1503 motorola
mosfet transistor 400 volts.100 amperes
AN569
MTE53N50E
CISS 3010
|
PDF
|
NI-360HF
Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from
|
Original
|
MRFG35010/D
MRFG35010
NI-360HF
MRFG35010
MTP23P06V
RO4350
DIODE Z5
|
PDF
|
zener z1
Abstract: 12 volt zener diode 10 watts j718
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
|
Original
|
MRF1513T1
AN215A,
zener z1
12 volt zener diode 10 watts
j718
|
PDF
|
MA8051CT-ND
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
|
Original
|
MRFG35010
360HF
MRFG35010
MA8051CT-ND
|
PDF
|
capacitor 0805 avx
Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to
|
Original
|
MRF21010
MRF21010
capacitor 0805 avx
08055C103KATDA
J940
08053G105ZATEA
Bipolar NPN Transistor sot23
|
PDF
|
NT 407 F MOSFET TRANSISTOR
Abstract: AN569 MTP29N15E SMD310
Text: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high
|
Original
|
MTP29N15E/D
MTP29N15E
NT 407 F MOSFET TRANSISTOR
AN569
MTP29N15E
SMD310
|
PDF
|
AN569
Abstract: MTB29N15E SMD310 S 170 MOSFET TRANSISTOR
Text: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high
|
Original
|
MTB29N15E/D
MTB29N15E
AN569
MTB29N15E
SMD310
S 170 MOSFET TRANSISTOR
|
PDF
|
EM- 546 motor
Abstract: 2N6545 2N6545 Motorola 2N6544
Text: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,
|
OCR Scan
|
b3b72S4
2N6545
EM- 546 motor
2N6545 Motorola
2N6544
|
PDF
|
transistor k 4110
Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili
|
OCR Scan
|
i-noa36Â
osit34Â
354G-01
transistor k 4110
K 4014 transistor
vqe 14e
TLO51
wf vqe 24 d
DIODE 4014
IC 4022
MOC70
S 417T
WF VQE 13
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise
|
OCR Scan
|
16-LEAD
10-LEAD
24-LEAD
12-LEAD
40-LEAD
20-LEAD
|
PDF
|
A 3131
Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
Text: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise
|
OCR Scan
|
3120/C,
3121/C
3122/C,
3123/C,
3124/C,
3125/C
3126/C
3128/C,
3129/C
3130/C
A 3131
CA3110
ca3109
CA3150
4-input nand gates ttl
4-input or gates ttl
ca3104
CA3105
CA3125
|
PDF
|
MRF285
Abstract: MRF2857
Text: 4bE 1> b3b 7 2 5 4 Q0c12ci l S T • flOTb 7ÏH6 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA k A á MRF2857HX, HXV NPN Silicon RF Small-Signal Transistor DMO lllllll Discrete Military Operation . . .designed for high-gain, low-noise amplifier, oscillator and mixer applications, and in
|
OCR Scan
|
MRF2857HX,
MRF285
MRF2857
|
PDF
|
55n10
Abstract: transistor 60n06 60N06 MTM60N06 MTM60N05 MTM55N08 sc 3228 MTM55N10 of 60N06 S0020
Text: MOTOROLA SC XSTRS/R bflE T> m F b3b7ES4 D O T flb n 0 7 e! • MOTOROLA ■I SEMICONDUCTOR MTM55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a Sheet 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
OCR Scan
|
b3b72S4
MTM55N10
MTM60N06
VI55N
55n10
transistor 60n06
60N06
MTM60N06
MTM60N05
MTM55N08
sc 3228
of 60N06
S0020
|
PDF
|
|
|
fzh 141
Abstract: FZH 131 fzh 105 fzh 115 FZH 105 A MC2003 FZH 121 MC2073 MC2100 MC2002
Text: ged dd INTEGRATED CIRCUITS FROM MOTOROLA l ! l l DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50
|
OCR Scan
|
MC2000
MC2100
MC2028/MC2078
MC2128/MC2178
fzh 141
FZH 131
fzh 105
fzh 115
FZH 105 A
MC2003
FZH 121
MC2073
MC2002
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LA NS DA LE SEMICONDUCTOR 35E D • SBfiflDB 0 0 0 0 3 5 ^ 2 ■ LTE MAXIMUM RATINGS T -4 3 -0 1 Rating Supply Operating Voltage Range - Vco TTL III MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor
|
OCR Scan
|
14-LEAD
16-LEAD
10-LEAD
24-LEAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTE53N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTE53N50E ISOTOP™ TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to
|
OCR Scan
|
MTE53N50E/D
MTE53N50E
OT-227B
|
PDF
|
MOTOROLA 2N6277
Abstract: 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380
Text: MOTOROLA SC O I O D E S / O P T O J 6367255 MOTOROLA SC 34 DE I b 3 b ? a S S <D I O D E S / O P T O 34C 0D37i4ti S | ~ 37946 1 SILICON POWER TRANSISTOR DICE continued) 2C6277 PNP 3 3 - 0 / 2C6379 / DIE NO. — NPN LINE SOURCE — PL500.70 NPN ~ ~ D die n o .
|
OCR Scan
|
0D37i4ti
PL500
2C6277
2N6274
2N627S
2N6276
2N6277
2C6379
2N6278
MOTOROLA 2N6277
2N6277 applications
MOTOROLA 2N6277 DIE
2N6382
3-7946
2N6277
2N6380
|
PDF
|
transistor PACKAGE PIN DIAGRAM
Abstract: No abstract text available
Text: MOTOROLA — — MC78BC00 Series Product Preview M icropow er Voltage Regulator The MC78BC00 voltage regulators are specifically designed to be used with an external power transistor to deliver high current with high voltage accuracy and low quiescent current.
|
OCR Scan
|
MC78BC00
OT-23,
OT-23)
MC78BC30NTR
MC78BC33NTR
MC78BC40NTR
MC78BC50NTR
OT-23
transistor PACKAGE PIN DIAGRAM
|
PDF
|
Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
|
OCR Scan
|
2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
|
PDF
|
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
|
OCR Scan
|
1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
|
PDF
|
MC2003
Abstract: MC2000 MC2023 MC2002 MC2100 MC2052 MC2124 MC2073 MC2112 MC2153
Text: INTEGRATED CIRCU ITS FROM MOTOROLA mm oo M C2000 Series 0 to +75°C M C2100 Series (—55 to +125°C) M T T L II integrated circu its co m prise a fa m ily o f transistor-transistor logic designed fo r general pu rpo se digital applications. T h e fa m ily has a high o pe ratin g speed <30-50
|
OCR Scan
|
MC2000
MC2100
MC2028/MC2078
MC2128/MC2178
MC2003
MC2023
MC2002
MC2052
MC2124
MC2073
MC2112
MC2153
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy
|
OCR Scan
|
MTP29N15E/D
TP29N15E
21A-09
|
PDF
|
JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
|
OCR Scan
|
|
PDF
|
