TRANSISTOR MARKING R2S Search Results

bfr93a

Contextual Info: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 * Short term description 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR93A Marking R2s

marking 93A

Abstract: BFR93A transistor marking R2s
Contextual Info: BFR 93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration

BFR93a

Contextual Info: BFR93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B

R2S sot23

Contextual Info: BFR93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B

transistor marking R2s

Abstract: transistor BFR93A BFR93A equivalent transistor of bfr93a
Contextual Info: BFR93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B

Contextual Info: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFR93AW

Abstract: marking code R2S 34
Contextual Info: BFR93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW

transistor marking R2s

Abstract: Q62702-F1489
Contextual Info: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

marking 93A

Abstract: Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz
Contextual Info: BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFR93AW

Abstract: VSO05561
Contextual Info: BFR93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW

BFR93AW

Contextual Info: BFR93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW

VSO05561

Abstract: Transistor BFR 30
Contextual Info: BFR 93AW NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AW

marking 93A

Abstract: transistor marking code 1325 b 11061
Contextual Info: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor marking R2s

Abstract: AMI siemens BFR93AW k150t
Contextual Info: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!

chip die npn transistor

Contextual Info: WILLAS FM120-M DTC113ZUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ DTC144EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

transistor marking R2s

Abstract: germanium transistor ac 128 BFP620 BGA420 T-25 RBS INFINEON TRANSISTOR MARKING NK
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz

BFP620F

Abstract: BFP420F
Contextual Info: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz

transistor marking R2s

Abstract: bfr93aw marking r2s Infineon Technologies transistor 4 ghz marking code R2s BCR108W
Contextual Info: BFR93AW NPN Silicon RF Transistor* • For low distortionbroadband amplifiers and oscillators up to 2 GHz at collector currents from 3 2 5 mA to 30 mA 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

transistor marking R2s

Abstract: marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66
Contextual Info: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

transistor marking R2s

Abstract: BFR93AT SC75
Contextual Info: BFR93AT NPN Silicon RF Transistor Preliminary data 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

transistor marking R2s

Contextual Info: BFR93AT NPN Silicon RF Transistor Preliminary data 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration