FZT600
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT600 TRANSISTOR 1 Issu E 2- FEBRUARY 1995 FEATURES ! I ‘ * 2A continuous * Guaranteed 140 VOLT current c VCE[l hFE Specified up to 1A E PART MARKING DETAIL FZT600 - * ,BSOLUTE MAXIMUM PARAMETFR .—.-.
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OT223
FZT600
10OmA,
20MHz
Col16ctor
FZT600
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MARKING H07
Abstract: No abstract text available
Text: DTC363TK Digital transistor, NPN, with 1 resistor Features • available in SMT3 SMT, SC-59 package • package marking: DTC363TK; H07 Dimensions (Units : mm) • DTC363TK (SMT3) 1 0 * 0 .2 0.0 * 0 I 096 in addition to standard features of digital transistor, this transistor has:
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DTC363TK
SC-59)
DTC363TK;
DTC363TK
MARKING H07
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Untitled
Abstract: No abstract text available
Text: FMJ1A Transistor, digital, PNP, integral diode Features Dimensions Units: mm • available in an SMT5 (FMT, SC-74A) package • package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • same size as SMT3 (SMT, SC-59), so
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SC-74A)
DTA144EKA)
SC-59)
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Diode marking MFW
Abstract: MDC03 Marking TRANSISTOR 737 MFW14 transistor marking D9 common collector npn array pnp 8 transistor array transistor 736
Text: IMD9A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMD9A; D9 • IMD9A (SMT6) 2 .9±0.Z package contains a PNP (DTA114YKA) and an NPN (DTC114YKA) transistor, each with
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SC-74)
DTA114YKA)
DTC114YKA)
SC-59)
Diode marking MFW
MDC03
Marking TRANSISTOR 737
MFW14
transistor marking D9
common collector npn array
pnp 8 transistor array
transistor 736
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs Q62702-F42 1= B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage
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Q62702-F42
OT-23
fl535b05
500MHz
fl53SLG5
D151b7Ã
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Marking Losa
Abstract: FZT705 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 - FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT605 PART MARKING DETAIL - fc
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OT223
FZT605
FZT705
SYM10V
FZT705
FZT704
Marking Losa
marking FZT705
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Diode T148
Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Text: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2
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SC-74A)
DTA144EKA)
SC-59)
47kfl
-100nA
-10mA/-5mA
100ns
Diode T148
transistor 667
transistor D 667
DTA144EKA
T148
marking J1
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bft93
Abstract: transistor BF 199
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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BFT93
BFT93
Q62702-F1063
OT-23
900MHz
transistor BF 199
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Untitled
Abstract: No abstract text available
Text: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics
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2SD2150
OT-89,
SC-62)
2SD2150;
2SD2150
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727 Transistor power values
Abstract: No abstract text available
Text: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration
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22kfl)
BCR191S
Q62702-C2418
OT-363
727 Transistor power values
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 777 NPN Silicon RF Transistor Preliminary Data • For UHF/VHF frequency converters and local oscillators. • /T = 2.2 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BF 777
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Q62702-F1426
OT-23
fl23Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611
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Q62702-F1611
OT-143
0535bOS
900MHz
fl235b05
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transistor rf cm 1104
Abstract: SL 1424 11p
Text: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OT-143
transistor rf cm 1104
SL 1424 11p
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NPN transistor x11
Abstract: marking code 2AW SL 100 NPN Transistor base emitter collector 6-pin "454" UMX11N 2SC2059K 6pin MARKING code T surface mount transistor 8 TRANSISTOR x11 HZ U35
Text: UMX11N Transistor, dual, NPN Features Dimensions Units: mm • available in UMT6 (UMT6) package • package marking: X11 • package contains two independent NPN transistors (2SC2059K) • • same size as UMT3 (UMT, C-70) so same placement machine can be
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UMX11N
2SC2059K)
100MHz
Ta-25
UMX11N
001S043
NPN transistor x11
marking code 2AW
SL 100 NPN Transistor base emitter collector
6-pin "454"
2SC2059K
6pin MARKING code T
surface mount transistor 8
TRANSISTOR x11
HZ U35
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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BFP181R
900MHz
Q62702-F1685
OT-143R
235fc
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marking GG
Abstract: marking code 604 SOT23
Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package
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OT-23
marking GG
marking code 604 SOT23
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=47kfl, R2=22kfl BCR 146 WLs 1 =B Q62702-C2260 Package 2=E It Pin Configuration CO Marking Ordering Code o Type
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47kfl,
22kfl)
Q62702-C2260
OT-23
S35b05
012D753
fl235bG5
12075M
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M7A transistor
Abstract: transistor M7A Q62702-C2340
Text: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2340
OT-23
0235bD5
235b05
fl235b05
M7A transistor
transistor M7A
Q62702-C2340
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Untitled
Abstract: No abstract text available
Text: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA
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2SB1198K
SC-59)
2SB1198K;
2SD1782K
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DTC143ZUA
Abstract: No abstract text available
Text: DTC143ZE DTC143ZUA DTC143ZKA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59)packages DTC143ZE (EMT3) j-, 0.6 r| , Ia OC mI I ,6± 0.2 package marking: — DTC143ZE & DTC143ZKA; E23
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DTC143ZE
DTC143ZUA
DTC143ZKA
SC-70)
SC-59
DTC143ZE
DTC143ZKA;
DTC143ZUA;
DTC143ZUA
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k2676
Abstract: No abstract text available
Text: UMB2N IMB2A Transistor, digitai, dual, PNP, Wlth 2 resistors Features Dimensions Units: mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB2N (UMT6) package marking: UMB2N and IMB2A; B2 i'p n ' I 0.65 J package contains two independent PNP digital transistors (DTA144EKA),
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SC-74)
DTA144EKA)
SC-70)
SC-59)
k2676
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BFQ17P
Abstract: MARKING 7C MARKING 7A SOT89 BFQ 19 RF
Text: ÔS3SbGS 0D2M455 T 47E D ISIEG -T-33-CS NPN Silicon RF Transistor BFQ 17P — SIEMENS AKTIENGESELLSCHAF • For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering code tape and reel Package BFQ17P
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0D2M455
T-33-CS
BFQ17P
62702-F983
OT-89
623SbGS
005MMSÃ
T-33-Dr
MARKING 7C
MARKING 7A SOT89
BFQ 19 RF
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ac 0624 transistor 17-33
Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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F1217
OT-143
ac 0624 transistor 17-33
uc 1604
0166 415 04 1 060
transistor cq 529
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10k£l, R2=10kfl Marking Ordering Code Pin Configuration BCR 133 WCs 1 =B Q62702-C2256 Package N> II m Type 3=C
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10kfl)
Q62702-C2256
OT-23
ambien35b05
a235b05
35b05
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