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    TRANSISTOR MARKING KRC Search Results

    TRANSISTOR MARKING KRC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING KRC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KRC103S SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● With Built-in Bias Resistors. 0.4 3 1 0.55 ● Reduce a Quantity of Parts and Manufacturing Process. +0.1 1.3-0.1 +0.1 2.4-0.1 ● Simplify Circuit Design.


    Original     		KRC103S OT-23 PDF

    KRC457

    Abstract: R2K10
    Text: SEMICONDUCTOR KRC457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. E M ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		500mA. KRC457 KRC457 100MHz R2K10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20


    Original     		KRC281S KRC286S OT-23 KRC282S KRC283S KRC284S KRC285S KRC286S PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)


    Original     		KRC281U KRC286U KRC281U KRC282U KRC284U KRC285U KRC283U PDF

    KRC286U

    Abstract: KRC281U KRC282U KRC283U KRC284U KRC285U
    Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E High emitter-base voltage : VEBO=25V Min B M High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		KRC281U KRC286U KRC281U KRC282U KRC285U KRC283U KRC284U KRC286U KRC282U KRC283U KRC284U KRC285U PDF

    TRANSISTOR MARKING NK

    Abstract: KRC410V KRC412V KRC411V KRC413V KRC414V
    Text: SEMICONDUCTOR KRC410V~KRC414V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. G A D 2 ᴌReduce a Quantity of Parts and Manufacturing Process.


    Original     		KRC410V KRC414V KRC410V KRC411V KRC413V TRANSISTOR MARKING NK KRC412V KRC411V KRC413V KRC414V PDF

    KRC281S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)


    Original     		KRC281S KRC286S KRC281S KRC282S KRC284S KRC285S KRC283S PDF

    KRC285U

    Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
    Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)


    Original     		KRC281U KRC286U KRC281U KRC282U KRC285U KRC283U KRC284U KRC285U KRC286U audio transistor KRC282U KRC283U KRC284U PDF

    KRC281S

    Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E B L L High emitter-base voltage : VEBO=25V Min 2 A H With Built-in Bias Resistors. 3 G Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		KRC281S KRC286S KRC281S KRC282S KRC285S KRC283S KRC284S KRC282S KRC283S KRC284S KRC285S KRC286S PDF

    The 2002 is a COMMON BASE transistor

    Abstract: high hfe transistor KRC681T KRC682T KRC683T KRC684T KRC685T KRC686T resistor 4.7 k
    Text: SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES 1 High emitter-base voltage : VEBO=25V Min G High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) B C 2 F A Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		KRC681T KRC686T KRC681T KRC682T KRC685T KRC683T KRC684T The 2002 is a COMMON BASE transistor high hfe transistor KRC682T KRC683T KRC684T KRC685T KRC686T resistor 4.7 k PDF

    KRC881T

    Abstract: KRC882T KRC883T KRC884T KRC885T KRC886T MTB marking
    Text: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		KRC881T KRC886T KRC881T KRC882T KRC885T KRC883T KRC884T KRC882T KRC883T KRC884T KRC885T KRC886T MTB marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		KRC881T KRC886T KRC881T KRC882T KRC885T KRC883T KRC884T PDF

    KRC281S

    Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 C J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20


    Original     		KRC281S KRC286S KRC281S KRC282S KRC285S KRC283S KRC284S KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K 6 G 2 5 3 4 D EQUIVALENT CIRCUIT TOP VIEW I 6 5 1. 2. 3. 4. 5. 6. Q1 Q2 E 1 2 0.95 H I _ 0.05 0.16 + 0.00-0.10 J 0.25+0.25/-0.15


    Original     		KRC881T KRC886T KRC881T KRC882T KRC884T KRC885T KRC883T PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ・With Built-in Bias Resistors. E B L L ・Simplify Circuit Design. D ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		KRC119S OT-23 PDF

    KRC455

    Abstract: 454 marking CA KRC456 KRC451 KRA451 KRA455 KRC452 KRC453 KRC454 KRC457
    Text: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D Reduce a Quantity of Parts and Manufacturing Process.


    Original     		KRC451 KRC455 KRC456 KRC457 KRC453 KRC452 KRC454 KRC455 454 marking CA KRC456 KRA451 KRA455 KRC452 KRC453 KRC454 KRC457 PDF

    TRANSISTOR MARK NB

    Abstract: KRC641T KRC642T KRC643T KRC644T KRC645T KRC646T transistor mark NF
    Text: SEMICONDUCTOR KRC641T~KRC646T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. E B FEATURES 1 ᴌWith Built-in Bias Resistors. B G ᴌSimplify Circuit Design. 4 3 I C EQUIVALENT CIRCUIT


    Original     		KRC641T KRC646T KRC641T KRC645T KRC642T KRC643T TRANSISTOR MARK NB KRC642T KRC643T KRC644T KRC645T KRC646T transistor mark NF PDF

    krc451

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D A J 2 Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.


    Original     		KRC451 500mA. KRC452 KRC453 KRC454 KRC455 KRC456 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B M FEATURES ・With Built-in Bias Resistors. M D G A J 2 ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		KRC451 500mA. KRC452 KRC453 KRC454 KRC455 KRC456 KRC457 KRC451 PDF

    KRC457

    Abstract: KRC455 KRC456 KRC453 R1 II
    Text: SEMICONDUCTOR KRC451~457 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors. D A J 2 ・Simplify Circuit Design. G ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		KRC451 500mA. KRC452 KRC453 KRC454 E55457 KRC451457 KRC457 KRC455 KRC456 R1 II PDF

    Untitled

    Abstract: No abstract text available
    Text: Diodes Transistors SMD Type Product specification KRC103S SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● With Built-in Bias Resistors. 0.4 3 1 0.55 ● Reduce a Quantity of Parts and Manufacturing Process. +0.1 1.3-0.1 +0.1 2.4-0.1 ● Simplify Circuit Design.


    Original     		KRC103S OT-23 PDF

    NPN transistor marking NY

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.


    Original     		KRC231S KRC235S OT-23 -50mA, 100MHz NPN transistor marking NY PDF

    KRC231S

    Abstract: KRC232S KRC233S KRC234S KRC235S
    Text: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.


    Original     		KRC231S KRC235S OT-23 KRC232S KRC233S KRC234S KRC235S PDF

    KRC231S-KRC233S

    Abstract: J 9100 KRC231S KRC232S KRC233S
    Text: KOREA ELECTRONICS CO.,LTD. KRC231SSEMICONDUCTOR KRC233S EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. DIM A B C D E G H J K L M N P FEATURES • With Built-in Bias Resistors.


    OCR Scan     		KRC231S-KRC233S OT-23 CHARACTERIS1998. KRC231Sâ KRC233S KRC231S-KRC233S J 9100 KRC231S KRC232S KRC233S PDF