Untitled
Abstract: No abstract text available
Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL
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FJX3904
SC-70
FJX3904TF
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UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
UMT222A
TRANSISTOR 1P
transistors marking 1p
BC847B
BC857B
MMST2222A
PN2222A
T116
B128D
MARKING 5D NPN
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
BC847B
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CQ 523
Abstract: MARKING CODE cq sot-89
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping
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L2SC2411KXLT1G
L2SA1036K
236AB)
L2SC2411KPLT1G
3000/Tape
L2SC2411KPLT3G
10000/Tape
L2SC2411KQLT1G
L2SC2411KQLT3G
CQ 523
MARKING CODE cq sot-89
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transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
r14525
MMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
mmbth10
MMBTH10-4LT1
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BULB128D-BT4
Abstract: transistor bs 140
Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULB128D-BT4
BULB128DB
O-263)
BULB128D-BT4
transistor bs 140
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BULB128D
Abstract: BULB128D-1
Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULB128D-1
BULB128D
O-262)
BULB128D
BULB128D-1
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transistor marking pr 04
Abstract: BULB128D BULB128D-1
Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULB128D-1
BULB128D
O-262)
transistor marking pr 04
BULB128D
BULB128D-1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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fa4a4
Abstract: 5AN1
Text: DATA SHEET SILICON TRANSISTOR FA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES +0.1 0.65 –0.15 • Compact package • Resistors built-in type 0.4 +0.1 –0.05 +0.1 • Complementary to FN4xxx 0.16 –0.06 Marking PACKAGE
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SC-59
fa4a4
5AN1
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2FK transistor
Abstract: No abstract text available
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
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Untitled
Abstract: No abstract text available
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
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SOT-23 2xk
Abstract: 2xk transistor npn
Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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MMBT4401K
MMBT4401K
OT-23
SOT-23 2xk
2xk transistor npn
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MMBTA13
Abstract: No abstract text available
Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE
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MMBTA13
MMBTA13
OT-23
QW-R206-006
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transistor 1AK
Abstract: 1AK marking transistor MMBT3904K 1ak transistor
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
transistor 1AK
1AK marking transistor
1ak transistor
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2tk transistor
Abstract: No abstract text available
Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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MMBT4403K
MMBT4403K
OT-23
2tk transistor
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transistor marking 3em
Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
MMBTH10LT1/D
transistor marking 3em
MMBTH10
MMBTH10LT1G
MMBTH10LT1
TRANSISTOR AH 2
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LMBT4413DW1T1G
Abstract: 1N916 marKing k13 sot-363
Text: LESHAN RADIO COMPANY, LTD. DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT4413DW1T1G FEATURE 6 5 ƽ We declare that the material of product is ROHS compliant and halogen free. 4 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking 3 Shipping LMBT4413DW1T1G
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LMBT4413DW1T1G
LMBT4413DW1T3G
OT-363/SC-88
3000/Tape
10000/Tape
419B-01
419B-02.
LMBT4413DW1T1G
1N916
marKing k13 sot-363
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transistor 033
Abstract: MMBT5088 MMBT5089 marking 1R NPN
Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)
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MMBT5088
MMBT5089
MMBT5088)
MMBT5089)
OT-23
QW-R206-033
transistor 033
MMBT5089
marking 1R NPN
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BULB128D-BT4
Abstract: No abstract text available
Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULB128D-BT4
BULB128DB
O-263)
BULB128D-BT4
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D1649
Abstract: fn4l3n FN4F4M
Text: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package +0.1 0.65 –0.15 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE
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SC-59
D1649
fn4l3n
FN4F4M
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R24020
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES 0.65 –0.15 • Compact package +0.1 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE
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SC-59
R24020
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS
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LMBT5401LT1G
3000/Tape
LMBT5401LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)
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MMBT5088
MMBT5089
MMBT5088)
MMBT5089)
OT-23
QW-R206-033
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