FP6142
Abstract: FP6142-33C5G FP6142-28S5G FP6142-28C5G FP6142-33 FP6142-25S5G 705 transistor FP6142-33S5P 150 mA CMOS Low-Dropout Regulator sot 23-5 FP6142-15S5P
Text: FP6142 fitipower integrated technology lnc. 500mA Low Noise LDO with Soft Start and Output Discharge Function Description Features The FP6142 is a family of CMOS low dropout LDO regulators with a low dropout voltage of 250mV at 500mA designed for noise-sensitive portable device,
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FP6142
500mA
FP6142
250mV
500mA
MO-178-C.
SC-70-5
FP6142-33C5G
FP6142-28S5G
FP6142-28C5G
FP6142-33
FP6142-25S5G
705 transistor
FP6142-33S5P
150 mA CMOS Low-Dropout Regulator sot 23-5
FP6142-15S5P
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Tantalum phase diagram band gap
Abstract: supply with dm 100 marking code Z0 5pin FP6142-25S5G
Text: FP6142 fitipower integrated technology lnc. 500mA Low Noise LDO with Soft Start and Output Discharge Function Description Features The FP6142 is a family of CMOS low dropout LDO regulators with a low dropout voltage of 250mV at 500mA designed for noise-sensitive portable device,
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FP6142
500mA
FP6142
250mV
FP6142-1
4-FEB-2010
OT-23-5
Tantalum phase diagram band gap
supply with dm 100
marking code Z0 5pin
FP6142-25S5G
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transistor SMD DK
Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25
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2SB798
OT-89
-100mA)
100TYP.
transistor SMD DK
dm SMD MARKING sot-89
smd transistor marking DK
marking dk sot-89
TRANSISTOR SMD PNP 1A
smd MARKING dk
dk SOT89
DM sot-89
TRANSISTOR MARKING DM
2SB798
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N6A07
Abstract: TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
Text: ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V BR DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMHN6A07T8
N6A07
N6A07
TRANSISTORS 132 GD
ZXMHN6A07T8
two transistors
sm9a
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01ED0
H1-O01ED0-0106030ND
em 234 stepper
2SC5586 equivalent
8002 1018 AUDIO amplifier
2SC5586
2SC5487
voltage doubler bridge
varistor 560-2
2sa2003
se125n
SE090
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C200H-DA004
Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
Text: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to
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C200H-DA003
C200H-OD217
C200H-MAD01
C200H-IDS01-V1
C200H-DA004
C200H-IDS21
CS1W-MAD44
CS1W-AD041
CS1W-AD081
CS1W-DA041
C200H-DA004
CS1W-MD292
TRANSISTOR GUIDE
DRT1-TS04P
OC224
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2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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TM1641S-L
TM1661B-L
TM1661P-L
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
2SC5586 equivalent
2sc5586
2sa1694 equivalent
2SC5487
transistor 2SC5586
STR83159
em 234 stepper
SE090
SK 5154S
2SK3460 equivalent
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h11cx
Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
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H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
E90700
H11C1
00V/400V
h11cx
GK transistor
PHOTO SCR definition
IN5060 diode
SC146D DATA SHEET
Photo SCR
H11C3
H11C5
H11C4
scr pins
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melcher bM 3000
Abstract: melcher LM 1000 LM 2000 melcher lm 3000 melcher Melcher CM-1000 Melcher bM 2000 melcher bM 1000 Melcher dc-dc converter bm 1000 melcher DM 3000 melcher am 3000 converter
Text: M-Family DC-DC Converters <100 W 50 W DC-DC AC-DC Converters Rugged Environment M-Family Class I Equipment Single output: series AM.LM 1000 Dual output: series AM.LM 2000 Triple output: series AM.LM 3000 Class II Equipment (double insulation) Single output: series CMZ/DMZ/LMZ 1000
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TRANSISTOR L 287 A
Abstract: 2SD2170 CE marking code diode sc-62
Text: 2SD2170 Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2170; DM-*, where ★ is hFE code • built-in 90 J ” V Zener diode between collector and base • low fluctuation of Zener voltage
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2SD2170
OT-89,
SC-62)
2SD2170;
Para10
2SD2170
2SD2170,
TRANSISTOR L 287 A
CE marking code
diode sc-62
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SL 100 NPN Transistor
Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures
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BFG590;
BFG590/X;
BFG590/XR
OT143
OT143R
BFG590
BFG590/X
BFG590/XR
BFG590
711DflSb
SL 100 NPN Transistor
n38 transistor
100 n38 transistor base pin
4 pin dual-emitter
SL 100 NPN Transistor base emitter collector
RF TRANSISTOR 2.5 GHZ s parameter
sot143r transistor
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2SC5053
Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate
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2SC5053
SC-62)
2SC5053;
2SA1900
2SC5053
bo78
2SC5053 NPN
transistor bb3
marking code 43b
marking CODE 43B transistor
2SA1900
T100
Transistor npn
43B MARKING
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35vt
Abstract: 2SC4639
Text: Ordering number: EN3482. _ F C 1 2 T R : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the
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EN3482.
2SC4639,
35vt
2SC4639
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F3200Z
Abstract: 050gj TBD 135 Transistor
Text: MOTOROLA Order this document by MMDF3200Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F 3200Z WaveFET Motorola Preferred Device Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 11.5 AMPERES
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MMDF3200Z/D
3200Z
F3200Z
050gj
TBD 135 Transistor
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Untitled
Abstract: No abstract text available
Text: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer
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BSP110
OT223
0D255D5
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Untitled
Abstract: No abstract text available
Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed
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bL53T31
0025b57
BST86
0D35bbD
BST86
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transistor marking code 325
Abstract: BSP110 marking r8v
Text: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer
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0G25502
BSP110
OT223
7Z94040
transistor marking code 325
BSP110
marking r8v
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BFS80
Abstract: BSS123L MWRC BSS123I bfs 417
Text: MO T O ROLA s c x s t r s /r 15E D I t,3b7ESM QGflbb'il b | f T>D.?-p.5" M A X IM U M RATINGS Unit Symbol Value Drain-Source Voltage V o ss 100 VdC Gate-Source Voltage Vg S ±35 Vdc id <DM 0.17 0.68 Symbol Max Unit PD 225 mW 1.8 mW/°C RftiA 556 °C/W PD 300
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BSS123L
BFS80
MWRC
BSS123I
bfs 417
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .
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i707L
T-31-n
2SC377
1947B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / M OS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit ; mm The 2S J462 is a switching device which can be driven directly 5.7 ± 0 J by an 1C operating at 3 V,
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2SJ462
2SJ462
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d3n03
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High C ell D ensity H D TM O S process.
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MMDF3N03HD
d3n03
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d33-02
Abstract: transistor motorola 351 D3302 motorola linear
Text: MOTOROLA Order this document by MTD3302/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTD3302 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 1° mO WaveFET™ devices are an advanced series of power MOSFETs which utilize M otorola’s
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MTD3302/D
MTD3302
d33-02
transistor motorola 351
D3302
motorola linear
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D3207
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF32D7/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s
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MMDF32D7/D
D3207
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MMDF3304
Abstract: motorola linear
Text: MOTOROLA Order this document by MMDF3304/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUALTMOS POWER MOSFET 7.3 AMPERES 30 VOLTS RDS on = 25 m il WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s
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MMDF3304/D
MMDF3304
motorola linear
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